STGY40NC60VD [STMICROELECTRONICS]
N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH?? IGBT; N沟道50A - 600V - MAX247非常快的PowerMESH ？ IGBT
| 型号： | STGY40NC60VD |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH?? IGBT |
| 文件： | 总11页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGY40NC60VD
N-CHANNEL 50A - 600V - Max247
Very Fast PowerMESH™ IGBT
Table 1: General Features
Figure 1: Package
TYPE
V
V
(Max)
I
C
CES
CE(sat)
@25°C
@100°C
STGY40NC60VD 600 V
< 2.5 V
50 A
■ HIGH CURRENT CAPABILITY
■ HIGH FREQUENCY OPERATION UP TO
50 KHz
■ LOSSES INCLUDE DIODE RECOVERY
ENERGY
■ OFF LOSSES INCLUDE TAIL CURRENT
3
2
1
■ LOWER C
/ C
RATIO
IES
RES
■ VERY SOFT ULTRA FAST RECOVERY
ANTIPARALLEL DIODE
Max247
■ NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
Weight: 4.96gr ± 0.01
Max Clip Pressure: 150 N/mm
2
Figure 2: Internal Schematic Diagram
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
™
erMESH IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■ UPS
■ MOTOR DRIVERS
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGY40NC60VD
GY40NC60VD
Max247
TUBE
Rev.8
July 2004
1/11
STGY40NC60VD
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
600
20
Symbol
V
CES
Collector-Emitter Voltage (V = 0)
V
V
GS
V
Reverse Battery Protection
ECR
V
V
Gate-Emitter Voltage
± 20
80
GE
I
A
Collector Current (continuous) at 25°C (#)
Collector Current (continuous) at 100°C (#)
Collector Current (pulsed)
C
I
A
50
C
I
(1)
200
30
A
CM
I
Diode R Forward Current at T =25°C
A
F
MS
C
P
TOT
Total Dissipation at T = 25°C
W
W/°C
260
2.08
C
Derating Factor
T
Storage Temperature
Operating Junction Temperature
stg
– 55 to 150
°C
T
j
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min.
--
Typ.
--
Max.
0.48
1.5
Unit
°C/W
°C/W
°C/W
°C
Rthj-case
Rthj-case
Rthj-amb
Thermal Resistance Junction-case (IGBT)
Thermal Resistance Junction-case (Diode)
Thermal Resistance Junction-ambient
--
--
--
--
50
T
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300
L
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Off
Symbol
Parameter
Test Conditions
= 1 mA, V = 0
Min.
Typ.
Max.
Unit
V
Collectro-Emitter Breakdown
Voltage
I
600
V
BR(CES)
C
GE
I
Collector-Emitter Leakage
V
= Max Rating
GE
CES
GES
Current (V = 0)
10
1
µA
mA
Tc=25°C
Tc=125°C
CE
I
Gate-Emitter Leakage
V
= ± 20 V , V = 0
± 100
nA
GE
CE
Current (V = 0)
CE
Table 6: On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
5.75
2.5
Unit
V
GE(th)
Gate Threshold Voltage
V
= V , I = 250 µA
3.75
V
CE
GE
C
V
Collector-Emitter Saturation
Voltage
V
V
= 15 V, I = 40A, Tj= 25°C
1.9
1.7
V
V
CE(SAT)
GE
GE
C
= 15 V, I = 40A,
C
Tj= 125°C
(#) Calculated according to the iterative formula:
T
– T
JMAX
-------------------------------------------------------------------------------------------------
(T ) =
C
I
C
C
R
× V
(T , I )
THJ – C
CESAT(MAX) C C
2/11
STGY40NC60VD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g (1)
V
V
= 15 V I = 20 A
20
S
Forward Transconductance
fs
CE
, C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
= 25V, f = 1 MHz, V = 0
4550
350
105
pF
pF
pF
ies
CE
GE
C
oes
C
res
Q
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
V
= 390 V, I = 40 A,
= 15V,
214
30
96
nC
nC
nC
g
CE
C
Q
ge
Q
gc
GE
(see Figure 21)
I
CL
Turn-Off SOA Minimum
Current
V
R
= 480 V , Tj = 150°C
200
A
clamp
= 100 Ω, V = 15V
G
GE
Table 8: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
= 390 V, I = 40 A
ns
ns
A/µs
d(on)
CC
C
43
17
2060
t
r
R = 3.3Ω, V = 15V, Tj= 25°C
G GE
(see Figure 19)
(di/dt)
Eon (2)
on
Turn-on Switching Losses
450
µJ
330
t
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
= 390 V, I = 40 A
42
19
1900
ns
ns
A/µs
d(on)
CC
C
t
r
R = 3.3Ω, V = 15V, Tj=
125°C
(see Figure 19)
G
GE
(di/dt)
Eon (2)
on
Turn-on Switching Losses
640
µJ
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off
Symbol
Parameter
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Test Conditions
Min.
Typ.
25
Max.
Unit
ns
t (V
)
off
V
R
= 390 V, I = 40 A,
r
cc
C
= 3.3 Ω , V = 15 V
GE
T = 25 °C
(see Figure 19)
GE
t (
d off
)
140
45
ns
J
t
f
ns
E
(3)
Turn-off Switching Loss
Total Switching Loss
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
720
1050
60
970
µJ
µJ
ns
ns
ns
off
E
1420
ts
t (V
r
)
off
V
R
= 390 V, I = 40 A,
cc C
= 3.3 Ω , V = 15 V
GE
GE
t (
d off
)
170
77
Tj = 125 °C
(see Figure 19)
t
f
E
(3)
Turn-off Switching Loss
Total Switching Loss
1400
2040
µJ
µJ
off
E
ts
(3)Turn-off losses include also the tail of the collector current.
3/11
STGY40NC60VD
Table 10: Collector-Emitter Diode
Symbol
Parameter
Test Conditions
I = 20 A
I = 20 A, Tj = 125 °C
f
Min.
Typ.
Max.
Unit
V
f
Forward On-Voltage
2.2
1.5
1
V
V
f
t
t
Q
Reverse Recovery Time
I = 20 A ,V = 40 V,
Tj = 25°C, di/dt = 100 A/µs
(see Figure 22)
44
32
66
ns
ns
nC
A
rr
f
R
a
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
rr
3
I
rrm
S
0.375
t
t
Q
Reverse Recovery Time
I = 20 A ,V = 40 V,
Tj =125°C, di/dt = 100 A/µs
(see Figure 22)
88
56
237
5.4
0.57
ns
ns
nC
A
rr
f
R
a
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
rr
I
rrm
S
4/11
STGY40NC60VD
Figure 3: Output Characteristics
Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 8: Normalized Gate Threshold vs Tem-
perature
5/11
STGY40NC60VD
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
Figure 10: Capacitance Variations
Figure 13: Total Switching Losses vs Temper-
ature
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 14: Total Switching Losses vs Collector
Current
6/11
STGY40NC60VD
Figure 15: Thermal Impedance
Figure 18: Ic vs Frequency
Figure 16: Turn-Off SOA
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
f
= (P - P ) / (E
+ E
)
MAX
D
C
ON
OFF
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
P = ∆T / R
D
THJ-C
considering ∆T = T - T = 125 °C- 75 °C = 50°C
J
C
2) The conduction losses are:
P = I * V * δ
CE(SAT)
C
C
with 50% of duty cycle, V
@125°C.
typical value
CESAT
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
P
= (E
+ E
) * freq.
OFF
SW
ON
Figure 17: Emitter-Collector Diode Character-
istics
4) Typical values @ 125°C for switching losses are
used (test conditions: V = 390V, V = 15V,
CE
GE
R
= 3.3 Ohm). Furthermore, diode recovery en-
G
ergy is included in the E (see note 2), while the
ON
tail of the collector current is included in the E
measurements (see note 3).
OFF
7/11
STGY40NC60VD
Figure 19: Test Circuit for Inductive Load
Switching
Figure 21: Gate Charge Test Circuit
Figure 20: Switching Waveforms
Figure 22: Diode Recovery Times Waveform
8/11
STGY40NC60VD
Table 11: Revision History
Date
Revision
Description of Changes
07-June-2004
7
Stylesheet update.
Added Max Values see Table 8 and 9
Added Figure 22
14-Jul-2004
8
Figure 19 updated, some datas have been modified
9/11
STGY40NC60VD
Max247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.70
2.20
1.00
2.00
3.00
0.40
19.70
5.35
15.30
14.20
3.70
TYP.
MAX.
5.30
2.60
1.40
2.40
3.40
0.80
20.30
5.55
15.90
15.20
4.30
MIN.
MAX.
A
A1
b
b1
b2
c
D
e
E
L
L1
P025Q
10/11
STGY40NC60VD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
11/11
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