STGWA19NC60HD [STMICROELECTRONICS]
31 A, 600 V, very fast IGBT with Ultrafast diode; 31 A， 600 V ，速度非常快IGBT与二极管超快
| 型号： | STGWA19NC60HD |
| 厂家： | 
ST |
| 描述： | 31 A, 600 V, very fast IGBT with Ultrafast diode |
| 文件： | 总14页 (文件大小：522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGWA19NC60HD
31 A, 600 V, very fast IGBT with Ultrafast diode
Features
■ Low on-voltage drop (V
)
CE(sat)
■ Very soft Ultrafast recovery anti-parallel diode
Applications
3
2
■ High frequency motor drives
1
■ SMPS and PFC in both hard switch and
TO-247
resonant topologies
Description
This device is an ultrafast IGBT. It utilizes the
advanced Power MESH™ process resulting in an
excellent trade-off between switching
Figure 1.
Internal schematic diagram
performance and low on-state behavior.
Table 1.
Part number
STGWA19NC60HD
Device summary
Marking
Package
Packaging
GWA19NC60HD
TO-247 long leads
Tube
September 2011
Doc ID 022223 Rev 1
1/14
www.st.com
14
Contents
STGWA19NC60HD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STGWA19NC60HD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
600
52
V
Continuous collector current
at TC = 25 °C
(1)
IC
A
A
Continuous collector current
at TC = 100 °C
(1)
IC
31
(2)
ICL
Turn-off latching current
Pulsed collector current
40
60
A
A
(3)
ICP
Diode RMS forward current at
TC = 25 °C
IF
20
50
A
A
Surge not repetitive forward current tp=10 ms
sinusoidal
IFSM
VGE
PTOT
TJ
Gate-emitter voltage
20
208
V
W
°C
Total dissipation at TC = 25 °C
Operating junction temperature
- 55 to 150
1. Calculated according to the iterative formula:
T
j(max) – TC
IC(TC) = -------------------------------------------------------------------------------------------------------
Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))
2. Vclamp = 80%VCES, TJ = 150 °C, RG = 10 Ω, VGE = 15 V
3. Pulse width limited by maximum permissible junction temperature and turn-off within RBSOA
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
0.6
3
°C/W
°C/W
°C/W
RthJC
RthJA
50
Doc ID 022223 Rev 1
3/14
Electrical characteristics
STGWA19NC60HD
2
Electrical characteristics
T = 25 °C unless otherwise specified)
J
Table 4.
Symbol
Static
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
breakdown voltage
V(BR)CES
IC= 1 mA
600
V
(VGE= 0)
VGE= 15 V, IC= 12 A
1.8
2
2.5
VGE= 15 V, IC= 15 A
Collector-emitter saturation
voltage
VCE(sat)
V
V
VGE= 15 V, IC=30 A,TJ=100 °C
VGE= 15 V, IC=12 A,TJ=125 °C
2.5
1.6
VGE(th) Gate threshold voltage
VCE= VGE, IC= 250 µA
3.75
5.75
Collector cut-off current
V
CE= 600 V
150
1
µA
ICES
(VGE = 0)
VCE= 600 V,TJ= 125 °C
mA
Gate-emitter leakage
IGES
V
GE= 20 V
100 nA
S
current (VCE = 0)
(1)
gfs
Forward transconductance VCE = 15 V IC= 12 A
5
,
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Cies
Coes
Cres
1180
130
36
pF
pF
pF
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
Output capacitance
-
-
-
-
Reverse transfer
capacitance
Qg
Qge
Qgc
Total gate charge
VCE = 390 V, IC = 5 A,
VGE = 15 V,
53
10
23
nC
nC
nC
Gate-emitter charge
Gate-collector charge
Figure 18
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STGWA19NC60HD
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Current rise time
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Figure 19
25
7
ns
ns
-
-
-
-
-
-
-
-
(di/dt)on Turn-on current slope
1600
A/µs
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
TJ = 125 °C
td(on)
tr
Turn-on delay time
Current rise time
24
8
ns
ns
(di/dt)on Turn-on current slope
1400
A/µs
Figure 19
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Figure 19
27
97
73
ns
ns
ns
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
TJ = 125 °C
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
58
ns
ns
ns
144
128
Figure 19
Table 7.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
Eon
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Figure 19
85
µJ
µJ
µJ
(1)
Eoff
-
-
189
274
-
-
Ets
VCC = 390 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
TJ = 125 °C
Eon
Turn-on switching losses
Turn-off switching losses
Total switching losses
187
407
594
µJ
µJ
µJ
(1)
Eoff
Ets
Figure 19
1. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
IF = 12 A
Min. Typ. Max. Unit
2.6
2.1
V
V
VF
Forward on-voltage
-
-
-
-
IF = 12 A, TJ = 125 °C
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 12 A, VR = 40 V,
di/dt = 100 A/µs
Figure 20
31
30
2
ns
nC
A
Qrr
Irrm
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 12 A, VR = 40 V,
TJ =125 °C, di/dt = 100 A/µs
Figure 20
59
102
4
ns
nC
A
Qrr
Irrm
-
-
Doc ID 022223 Rev 1
5/14
Electrical characteristics
STGWA19NC60HD
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage vs.
temperature
Figure 6.
Gate charge vs. gate-source
voltage
Figure 7.
Capacitance variations
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STGWA19NC60HD
Electrical characteristics
Figure 8.
Normalized gate threshold voltage Figure 9.
vs. temperature
Collector-emitter on voltage vs.
collector current
Figure 10. Normalized breakdown voltage vs Figure 11. Switching losses vs. temperature
temperature
Figure 12. Switching losses vs. gate
resistance
Figure 13. Switching losses vs. collector
current
Doc ID 022223 Rev 1
7/14
Electrical characteristics
Figure 14. Turn-off SOA
STGWA19NC60HD
Figure 15. Thermal impedance
Figure 16. Forward voltage drop vs. forward
current
I
(A)
FM
50
45
40
35
30
25
20
15
10
5
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
V
(V)
FM
0
0
1
2
3
4
5
6
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STGWA19NC60HD
Test circuits
3
Test circuits
Figure 17. Test circuit for inductive load
switching
Figure 18. Gate charge test circuit
AM01504v1
AM01505v1
Figure 19. Switching waveform
Figure 20. Diode recovery time waveform
Qrr
90%
10%
di/dt
VG
IF
trr
90%
10%
ta
tb
VCE
Tr(Voff)
Tcross
t
90%
10%
IRRM
IRRM
IC
Td(off)
Toff
Td(on)
Ton
Tf
Tr(Ion)
VF
dv/dt
AM01506v1
AM01507v1
Doc ID 022223 Rev 1
9/14
Package mechanical data
STGWA19NC60HD
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/14
Doc ID 022223 Rev 1
STGWA19NC60HD
Table 9.
Package mechanical data
TO-247 long leads mechanical data
Min.
mm.
Typ.
Dim.
Max.
A
D
4.90
1.85
0.55
1.07
1.90
2.87
5.15
2.10
0.67
1.32
2.38
3.38
E
F
F1
F2
G
10.90 BSC
H
15.77
20.82
4.16
16.02
21.07
4.47
L
L1
L2
L3
L4
L5
M
5.49
5.74
20.05
3.68
20.30
3.93
6.04
6.29
2.27
2.52
V
10°
3°
V1
V3
Dia.
20°
3.55
3.66
Doc ID 022223 Rev 1
11/14
Package mechanical data
Figure 21. TO-247 long leads drawing
STGWA19NC60HD
12/14
Doc ID 022223 Rev 1
STGWA19NC60HD
Revision history
5
Revision history
Table 10. Document revision history
Date
Revision
Changes
14-Sep-2011
1
Initial release.
Doc ID 022223 Rev 1
13/14
STGWA19NC60HD
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