STGWA45HF60WDI [STMICROELECTRONICS]
45 A, 600 V ultra fast IGBT with low drop diode; 45 A， 600 V超快IGBT具有低压降二极管
| 型号： | STGWA45HF60WDI |
| 厂家： | 
ST |
| 描述： | 45 A, 600 V ultra fast IGBT with low drop diode |
| 文件： | 总16页 (文件大小：496K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGW45HF60WDI
45 A, 600 V ultra fast IGBT with low drop diode
Features
■ Improved E at elevated temperature
off
■ Low V soft recovery antiparallel diode
F
Applications
■ Welding
3
■ Induction heating
■ Resonant converters
2
1
TO-247
Description
The STGW45HF60WDI is based on a new
advanced planar technology concept to yield an
IGBT with more stable switching performance
Figure 1.
Internal schematic diagram
(E versus temperature, as well as lower
off)
conduction losses. The device is tailored to high
switching frequency operation (over 100 kHz).
Table 1.
Device summary
Order code
Marking
Package
TO-247
TO-247 long leads
Packaging
STGW45HF60WDI
STGWA45HF60WDI
GW45HF60WDI
45HF60WDI
Tube
December 2010
Doc ID 16091 Rev 2
1/16
www.st.com
16
Content
STGW45HF60WDI
Content
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
Doc ID 16091 Rev 2
STGW45HF60WDI
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-247
TO-247 long leads
VCES
Collector-emitter voltage (VGE = 0)
Continuous collector current at TC = 25 °C
Continuous collector current at TC = 100 °C
Pulsed collector current
600
80
V
A
A
A
A
V
A
(1)
IC
70
45
(1)
IC
50
(2)
ICP
150
80
(3)
ICL
Turn-off latching current
VGE
IF
Gate-emitter voltage
20
Diode RMS forward current at TC = 25 °C
30
Surge not repetitive forward current tp= 10 ms
sinusoidal
IFSM
130
310
A
PTOT
Tstg
Tj
Total dissipation at TC = 25 °C
Storage temperature
250
W
– 55 to 150
°C
Operating junction temperature
1. Calculated according to the iterative formula:
T
j(max) – TC
IC(TC) = ----------------------------------------------------------------------------------------------------------
Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA
3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-247
TO-247 long leads
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
0.5
0.4
°C/W
°C/W
°C/W
Rthj-case
1.5
50
Rthj-amb Thermal resistance junction-ambient
Doc ID 16091 Rev 2
3/16
Electrical characteristics
STGW45HF60WDI
2
Electrical characteristics
(T = 25 °C unless otherwise specified).
J
Table 4.
Symbol
Static
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
breakdown voltage
V(BR)CES
IC = 1 mA
600
V
(VGE = 0)
VGE = 15 V, IC= 30 A
1.9
2.5
V
V
Collector-emitter saturation
voltage
VCE(sat)
VGE = 15V, IC = 30 A,T = 125 °C
J
1.65
VGE(th) Gate threshold voltage
VCE = VGE, IC = 1 mA
3.75
5.75
V
VCE = 600 V
500
5
µA
Collector cut-off current
(VGE = 0)
ICES
VCE = 600 V, T = 125 °C
J
mA
Gate-emitter leakage
IGES
VGE = 20 V
100 nA
current (VCE = 0)
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Cies
Coes
Cres
2900
260
55
pF
pF
pF
VCE = 25 V, f = 1 MHz,
VGE = 0
Output capacitance
-
-
-
-
Reverse transfer
capacitance
Qg
Qge
Qgc
Total gate charge
VCE = 400 V, IC = 30 A,
VGE = 15 V
160
17
nC
nC
nC
Gate-emitter charge
Gate-collector charge
Figure 18
65
Table 6.
Symbol
Switching off (inductive load)
Parameter Test conditions
Min. Typ. Max. Unit
tr(Voff) Off voltage rise time
VCC = 400 V, IC = 30 A,
RGE = 4.7 Ω, VGE = 15 V
Figure 17
30
145
50
ns
ns
ns
td(off
tf
)
Turn-off delay time
Current fall time
-
-
-
-
VCC = 400 V, IC = 30 A,
tr(Voff) Off voltage rise time
47
185
65
ns
ns
ns
RGE = 4.7 Ω, VGE =15 V,
T = 125 °C
J
Figure 17
td(off
tf
)
Turn-off delay time
Current fall time
4/16
Doc ID 16091 Rev 2
STGW45HF60WDI
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
VCC = 400 V, IC = 30 A
Eoff
Turn-off switching losses
RG = 4.7 Ω, VGE = 15 V,
Figure 19
-
-
330
550
µJ
µJ
VCC = 400 V, IC = 30 A
Eoff
Turn-off switching losses
RG = 4.7 Ω, VGE = 15 V,
800
T = 125 °C, Figure 19
J
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
Min. Typ. Max. Unit
IF = 30 A
1.4
1.2
1.8
V
V
VF
Forward on-voltage
-
-
IF = 30 A, T = 125 °C
J
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 30 A,VR = 50 V,
di/dt = 100 A/µs
Figure 20
90
305
5.2
ns
nC
A
Qrr
Irrm
-
-
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 30 A,VR = 50 V,
235
1100
9
ns
nC
A
Qrr
Irrm
T =125 °C, di/dt = 100 A/µs
-
J
Figure 20
Doc ID 16091 Rev 2
5/16
Electrical characteristics
STGW45HF60WDI
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
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Figure 4.
Normalized V
vs. I
Figure 5.
Normalized V
vs. temperature
CE(sat)
C
CE(sat)
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Figure 6.
Normalized breakdown voltage vs. Figure 7.
temperature
Normalized gate threshold voltage
vs. temperature
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6/16
Doc ID 16091 Rev 2
% ꢇ*ꢈ
STGW45HF60WDI
Electrical characteristics
Figure 8.
Gate charge vs. gate-emitter
voltage
Figure 9.
Capacitances variations
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Figure 10. Switching losses vs. temperature
Figure 11. Switching losses vs. gate
resistance
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Figure 12. Switching losses vs. collector
current
Figure 13. Turn-off SOA
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Doc ID 16091 Rev 2
7/16
Electrical characteristics
STGW45HF60WDI
Figure 14. Diode forward on voltage
Figure 15. Thermal impedance for TO-247
)
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Figure 16. Thermal impedance for TO-247
narrow leads
8/16
Doc ID 16091 Rev 2
STGW45HF60WDI
Test circuits
3
Test circuits
Figure 17. Test circuit for inductive load
switching
Figure 18. Gate charge test circuit
AM01504v1
AM01505v1
Figure 19. Switching waveform
Figure 20. Diode recovery time waveform
Qrr
90%
10%
di/dt
VG
IF
trr
90%
10%
ta
tb
VCE
Tr(Voff)
Tcross
t
90%
10%
IRRM
IRRM
IC
Td(off)
Toff
Td(on)
Ton
Tf
Tr(Ion)
VF
dv/dt
AM01506v1
AM01507v1
Doc ID 16091 Rev 2
9/16
Package mechanical data
STGW45HF60WDI
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/16
Doc ID 16091 Rev 2
STGW45HF60WDI
Table 9.
Package mechanical data
TO-247 mechanical data
Min.
mm
Dim.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
b1
b2
c
2.0
3.0
0.40
19.85
15.45
D
E
e
5.45
18.50
5.50
L
14.20
3.70
14.80
4.30
L1
L2
∅P
∅R
S
3.55
4.50
3.65
5.50
Doc ID 16091 Rev 2
11/16
Package mechanical data
Figure 21. TO-247 drawing
STGW45HF60WDI
0075325_F
12/16
Doc ID 16091 Rev 2
STGW45HF60WDI
Package mechanical data
Table 10. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
D
4.90
1.85
0.55
1.07
1.90
2.87
5.15
2.10
0.67
1.32
2.38
3.38
E
F
F1
F2
G
10.90 BSC
H
15.77
20.82
4.16
16.02
21.07
4.47
L
L1
L2
L3
L4
L5
M
5.49
5.74
20.05
3.68
20.30
3.93
6.04
6.29
2.27
2.52
V
10°
3°
V1
V3
Dia.
20°
3.55
3.66
Doc ID 16091 Rev 2
13/16
Package mechanical data
Figure 22. TO-247 long leads drawing
STGW45HF60WDI
14/16
Doc ID 16091 Rev 2
STGW45HF60WDI
Revision history
5
Revision history
Table 11. Document revision history
Date
Revision
Changes
04-Aug-2009
1
Initial release.
Document status promoted from preliminary data to datasheet.
Inserted dynamic parameters on Table 5, Table 6, Table 7 and
Table 8.
21-Dec-2010
2
Inserted Section 2.1: Electrical characteristics (curves).
Updated TO-247 long leads package mechanical data.
Doc ID 16091 Rev 2
15/16
STGW45HF60WDI
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Doc ID 16091 Rev 2
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