STB20NK50Z_09 [STMICROELECTRONICS]
N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK; N沟道500 V， 0.23 Ω ， 17的超网™功率MOSFET稳压保护TO- 220 ， TO- 247 ， TO- 220FP ， D2PAK
| 型号： | STB20NK50Z_09 |
| 厂家： | 
ST |
| 描述： | N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK |
| 文件： | 总18页 (文件大小：610K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB20NK50Z, STF20NK50Z
STP20NK50Z, STW20NK50Z
N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET
Zener-protected TO-220, TO-247, TO-220FP, D2PAK
Features
RDS(on)
max
Type
VDSS
ID
PW
3
3
2
2
STB20NK50Z
STF20NK50Z
STP20NK50Z
STW20NK50Z
500 V
500 V
500 V
500 V
< 0.27 Ω 17 A 190 W
< 0.27 Ω 17 A 40 W
< 0.27 Ω 17 A 190 W
< 0.27 Ω 17 A 190 W
1
1
TO-220
TO-220FP
3
■ Extremely high dv/dt capability
■ 100% avalanche tested
3
1
2
1
D²PAK
TO-247
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Figure 1.
Internal schematic diagram
D(2)
Application
■ Switching applications
Description
G(1)
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB20NK50Z
STF20NK50Z
STP20NK50Z
STW20NK50Z
B20NK50Z
F20NK50Z
P20NK50Z
W20NK50Z
D²PAK
TO-220FP
TO-220
Tape and reel
Tube
TO-247
November 2009
Doc ID 9118 Rev 9
1/18
www.st.com
18
Contents
STx20NK50Z
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
5
6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
Doc ID 9118 Rev 9
STx20NK50Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
TO-220, TO-247,
Unit
TO-220FP
D²PAK
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate-source voltage
500
30
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
17
10.71
68
17(1)
10.71
68
A
A
ID
(2)
IDM
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
190
40
W
1.51
W/°C
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
VISO
--
2500
V
Gate source ESD (HBM-C=100 pF,
R=1.5 kΩ)
VESD(G-S)
6000
4.5
dv/dt (3)
Tstg
Peak diode recovery voltage slope
Storage temperature
V/ns
°C
-55 to 150
150
Tj
Max operating junction temperature
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 17 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220,
D²PAK
TO-247 TO-220FP
Rthj-case
Rthj-amb
Thermal resistance junction-case max
0.66
3.1
°C/W
°C/W
Thermal resistance junction-ambient
max
62.5
50
300
62.5
Maximum lead temperature for
soldering purpose
Tl
°C
Doc ID 9118 Rev 9
3/18
Electrical ratings
STx20NK50Z
Table 4.
Avalanche characteristics
Parameter
Symbol
Value
Unit
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj Max)
IAR
17
A
Single pulse avalanche energy
EAS
850
mJ
(starting TJ=25 °C, ID=IAR, VDD=50 V)
4/18
Doc ID 9118 Rev 9
STx20NK50Z
Electrical characteristics
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
ID =1 mA, VGS = 0
Min. Typ. Max. Unit
Drain-source
V(BR)DSS
500
V
breakdown voltage
Zero gate voltage
V
DS = max rating
1
µA
µA
IDSS
drain current (VGS = 0)
VDS = max rating, TC = 125 °C
50
Gate-body leakage
current (VDS = 0)
IGSS
VGS
=
20 V
10
µA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 8.5 A
3
3.75 4.5
0.23 0.27
Static drain-source on
resistance
RDS(on)
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
gfs
Forward transconductance
VDS = 15 V, ID = 8.5 A
-
13
S
Ciss
Coss
Crss
Input capacitance
2600
328
72
pF
pF
pF
V
DS = 25 V, f = 1 MHz,
Output capacitance
-
VGS = 0
Reverse transfer capacitance
Equivalent output
capacitance
(2)
Coss eq.
VDS =0, VDS = 0 to 640 V
-
-
187
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
28
20
70
15
ns
ns
ns
ns
VDD = 250 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Turn-off delay time
Fall time
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 17 A,
VGS = 10 V
85
15.5
42
119
nC
nC
nC
-
(see Figure 20)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
.
Doc ID 9118 Rev 9
5/18
Electrical characteristics
STx20NK50Z
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ. Max. Unit
ISD
Source-drain current
17
68
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 17 A, VGS = 0
1.6
V
ISD = 17 A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
355
3.90
22
ns
µC
A
di/dt = 100 A/µs
VR = 100 V
Qrr
-
-
IRRM
(see Figure 21)
ISD = 17 A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
440
5.72
26
ns
µC
A
di/dt = 100 A/µs
VR = 100 V, Tj = 150 °C
(see Figure 21)
Qrr
IRRM
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
30
BVGSO Gate-source breakdown voltage Igs= 1mA (open drain)
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
6/18
Doc ID 9118 Rev 9
STx20NK50Z
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
D²PAK
Figure 4.
Safe operating area for TO-247
Thermal impedance for TO-247
Figure 6.
Safe operating area for TO-220FP
Thermal impedance for TO-220FP
Doc ID 9118 Rev 9
7/18
Electrical characteristics
STx20NK50Z
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
8/18
Doc ID 9118 Rev 9
STx20NK50Z
Electrical characteristics
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
Figure 16. Maximum avalanche energy vs
temperature
Figure 17. Normalized B
vs temperature
VDSS
Figure 18. Source-drain diode forward
characteristic
Doc ID 9118 Rev 9
9/18
Test circuits
STx20NK50Z
3
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
10/18
Doc ID 9118 Rev 9
STx20NK50Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 9118 Rev 9
11/18
Package mechanical data
STx20NK50Z
D²PAK (TO-263) mechanical data
mm
inch
Typ
Dim
Min
Typ
Max
Min
Max
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.181
0.009
0.037
0.067
0.024
0.053
0.368
b2
c
c2
D
D1
E
10.40
0.409
E1
e
8.50
2.54
0.1
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.208
0.624
0.106
0.110
0.055
0.069
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.051
0.4
0.016
V2
0°
8°
0°
8°
0079457_M
12/18
Doc ID 9118 Rev 9
STx20NK50Z
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
2.75
0.7
1
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.70
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_J
Doc ID 9118 Rev 9
13/18
Package mechanical data
STx20NK50Z
TO-220 type A mechanical data
mm
Dim
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
3.85
2.95
2.65
0015988_Rev_S
14/18
Doc ID 9118 Rev 9
STx20NK50Z
Package mechanical data
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.85
5.15
2.20
1.0
2.60
1.40
2.40
3.40
b1
b2
c
2.0
3.0
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
14.80
4.30
L1
L2
øP
øR
S
3.70
3.55
3.65
4.50
5.50
Doc ID 9118 Rev 9
15/18
Packaging mechanical data
STx20NK50Z
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8 13.2 0.504 0.520
20.2 0795
24.4 26.4 0.960 1.039
100 3.937
0.059
30.4
1.197
BASE QTY
BULK QTY
TAPE MECHANICAL DATA
1000
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
16/18
Doc ID 9118 Rev 9
STx20NK50Z
Revision history
6
Revision history
Table 9.
Date
Document revision history
Revision
Changes
21-Jun-2004
26-Mar-2009
26-Nov-2009
7
8
9
Added new package, mechanical data.
Updated symbol for RDS(on) in Table 5: On/off states.
Doc ID 9118 Rev 9
17/18
STx20NK50Z
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18/18
Doc ID 9118 Rev 9
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