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STB20NM50FD-1 [STMICROELECTRONICS]

N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh⑩ Power MOSFET with FAST DIODE; N沟道500V - 0.22ohm - 20A TO- 220 / I2PAK FDmesh⑩功率MOSFET，快速二极管
STB20NM50FD-1
型号： STB20NM50FD-1
厂家： ST    ST
描述：

N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh⑩ Power MOSFET with FAST DIODE
N沟道500V - 0.22ohm - 20A TO- 220 / I2PAK FDmesh⑩功率MOSFET，快速二极管

晶体 二极管 晶体管 开关 脉冲
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STP20NM50FD  
STB20NM50FD-1  
N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK  
FDmesh™ Power MOSFET (with FAST DIODE)  
TYPE  
V
DSS  
R
R
ds(on)  
*Q  
I
D
DS(on)  
g
STP20NM50FD  
500V <0.25Ω 8.36 Ω*nC 20 A  
STB20NM50FD-1 500V <0.25Ω 8.36 Ω*nC 20 A  
■
■
■
■
■
■
TYPICAL R (on) = 0.22Ω  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE CHARGE  
LOW GATE INPUT RESISTANCE  
TIGHT PROCESS CONTROL AND HIGH  
MANUFACTURING YIELDS  
DS  
3
3
2
1
2
1
I2PAK  
(Tabless TO-220)  
TO-220  
DESCRIPTION  
The FDmesh™ associates all advantages of reduced  
on-resistance and fast switching with an intrinsic fast-  
recovery body diode. It is therefore strongly recom-  
mended for bridge topologies, in particular ZVS phase-  
shift converters.  
I
NTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS  
FOR SMPS AND WELDING EQUIPMENT  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
P20NM50FD  
B20NM50FD-1  
PACKAGE  
TO-220  
I2PAK  
PACKAGING  
TUBE  
STP20NM50FD  
STB20NM50FD-1  
TUBE  
August 2003  
1/9  
STP20NM50FD/STB20NM50FD-1  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
500  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
500  
V
DGR  
GS  
V
Gate- source Voltage  
±30  
V
GS  
I
Drain Current (continuous) at T = 25°C  
20  
A
D
C
I
Drain Current (continuous) at T = 100°C  
14  
A
D
C
I
( )  
Drain Current (pulsed)  
80  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
192  
W
C
Derating Factor  
1.2  
W/°C  
V/ns  
°C  
°C  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
20  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
( ) Pulse width limited by safe operating area  
(1) I ≤ 20A, di/dt ≤ 200 A/µs, V ≤ V  
, T ≤ T  
(BR)DSS j JMAX.  
SD  
DD  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max  
Max  
0.65  
62.5  
300  
°C/W  
°C/W  
°C  
T
Maximum Lead Temperature For Soldering Purpose  
l
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
I
AR  
Avalanche Current, Repetitive or Not-Repetitive  
10  
A
(pulse width limited by T max)  
j
E
Single Pulse Avalanche Energy  
700  
mJ  
AS  
(starting T = 25 °C, I = I , V = 35 V)  
j
D
AR  
DD  
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)  
ON/OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
I
D
= 250 µA, V = 0  
500  
V
(BR)DSS  
GS  
Breakdown Voltage  
I
Zero Gate Voltage  
V
V
V
= Max Rating  
DS  
1
µA  
µA  
nA  
DSS  
Drain Current (V = 0)  
GS  
= Max Rating, T = 125 °C  
10  
DS  
GS  
C
I
Gate-body Leakage  
= ±30V  
±100  
GSS  
Current (V = 0)  
DS  
V
V
V
= V , I = 250 µA  
5
V
Gate Threshold Voltage  
3
4
GS(th  
DS  
GS  
GS  
D
R
Static Drain-source On  
Resistance  
= 10V, I = 10A  
0.22  
0.25  
Ω
DS(on)  
D
2/9  
STP20NM50FD/STB20NM50FD-1  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
DYNAMIC  
Symbol  
(1)  
Parameter  
Test Conditions  
x R  
DS(on)max,  
Min.  
Typ.  
Max.  
Unit  
g
Forward Transconductance  
V
> I  
9
S
fs  
DS  
D(on)  
I
= 10A  
D
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
V
= 25V, f = 1 MHz, V = 0  
1380  
290  
40  
pF  
pF  
pF  
iss  
DS  
GS  
C
oss  
C
rss  
C
(2) Equivalent Output  
Capacitance  
V
= 0V, V = 0V to 400V  
130  
2.8  
pF  
oss eq.  
GS  
DS  
R
Gate Input Resistance  
f=1 MHz Gate DC Bias=0  
Test Signal Level=20mV  
Open Drain  
Ω
g
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
(2) C is defined as a constant equivalent capacitance giving the same charging time as C  
when V increases from 0 to 80% V .  
DSS  
oss eq.  
oss  
DS  
SWITCHING ON  
Symbol  
Parameter  
Turn-on Delay Time  
Rise Time  
Test Conditions  
Min.  
Typ.  
22  
Max.  
Unit  
t
V
R
= 250V, I = 10 A  
ns  
ns  
d(on)  
DD  
D
= 4.7Ω V = 10V  
G
GS  
t
20  
r
(see test circuit, Figure 3)  
Q
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
V
V
= 400V, I = 20A,  
= 10V  
38  
18  
10  
53  
nC  
nC  
nC  
g
DD  
GS  
D
Q
gs  
gd  
Q
SWITCHING OFF  
Symbol  
Parameter  
Off-voltage Rise Time  
Fall Time  
Test Conditions  
Min.  
Typ.  
6
Max.  
Unit  
ns  
t
V
R
= 400V, I = 20 A,  
r(Voff)  
DD  
D
= 4.7Ω, V = 10V  
GS  
(see test circuit, Figure 5)  
G
t
15  
30  
ns  
f
t
Cross-over Time  
ns  
c
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
20  
Unit  
A
I
SD  
Source-drain Current  
I
(2)  
(1)  
Source-drain Current (pulsed)  
Forward On Voltage  
80  
A
SDM  
V
I
I
= 20 A, V = 0  
1.5  
V
SD  
SD  
SD  
GS  
t
= 20 A, di/dt = 100A/µs,  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
245  
2
ns  
µC  
A
rr  
V
= 60V, T = 150°C  
j
DD  
Q
rr  
RRM  
(see test circuit, Figure 5)  
I
16  
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by safe operating area.  
3/9  
STP20NM50FD/STB20NM50FD-1  
Safe Operating Area For TO-220 / I²PAK  
Thermal Impedance For TO-220 / I²PAK  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
4/9  
STP20NM50FD/STB20NM50FD-1  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
Normalized Gate Thereshold Voltage vs Temp.  
Normalized On Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
5/9  
STP20NM50FD/STB20NM50FD-1  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuit For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/9  
STP20NM50FD/STB20NM50FD-1  
TO-220 MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.40  
0.61  
1.15  
0.49  
15.25  
10  
MAX.  
4.60  
0.88  
1.70  
0.70  
15.75  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
MIN.  
0.173  
0.024  
0.045  
0.019  
0.60  
MAX.  
0.181  
0.034  
0.066  
0.027  
0.620  
0.409  
0.106  
0.202  
0.052  
0.256  
0.107  
0.551  
0.154  
A
b
b1  
c
D
E
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
3.50  
3.93  
16.40  
28.90  
0.645  
1.137  
3.75  
2.65  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
7/9  
STP20NM50FD/STB20NM50FD-1  
TO-262 (I2PAK) MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.40  
2.40  
0.61  
1.14  
0.49  
1.23  
8.95  
2.40  
4.95  
10  
MAX.  
4.60  
2.72  
0.88  
1.70  
0.70  
1.32  
9.35  
2.70  
5.15  
10.40  
14  
MIN.  
0.173  
0.094  
0.024  
0.044  
0.019  
0.048  
0.352  
0.094  
0.194  
0.393  
0.511  
0.137  
0.050  
MAX.  
0.181  
0.107  
0.034  
0.066  
0.027  
0.052  
0.368  
0.106  
0.202  
0.410  
0.551  
0.154  
0.055  
A
A1  
b
b1  
c
c2  
D
e
e1  
E
L
13  
L1  
L2  
3.50  
1.27  
3.93  
1.40  
8/9  
STP20NM50FD/STB20NM50FD-1  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
© http://www.st.com  
9/9  

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