STB20NM50_07 [STMICROELECTRONICS]
N-channel 500V - 0.20ヘ - 20A - TO220/FP-D2PAK-I2PAK MDmesh⑩ Power MOSFET; N沟道500V - 0.20ヘ - 20A - TO220 / FP- D2PAK - I2PAK MDmesh⑩功率MOSFET
| 型号： | STB20NM50_07 |
| 厂家： | 
ST |
| 描述： | N-channel 500V - 0.20ヘ - 20A - TO220/FP-D2PAK-I2PAK MDmesh⑩ Power MOSFET |
| 文件： | 总14页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB20NM50 - STB20NM50-1
STP20NM50 - STP20NM50FP
N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK
MDmesh™ Power MOSFET
General features
VDSS
(@TJmax
Type
RDS(on)
ID
)
3
3
2
STB20NM50
STB20NM50-1
STP20NM50
550V
550V
550V
550V
< 0.25Ω
< 0.25Ω
< 0.25Ω
< 0.25Ω
20A
20A
20A
20A
2
1
1
TO-220
TO-220FP
STP20NM50FP
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
3
1
3
2
1
D²PAK
I²PAK
■ Low input capacitance and gate charge
■ Low gate input resistance
Internal schematic diagram
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the Multiple
Drain process with the Company’s
PowerMESH™horizontal layout. The resulting
product has an outstanding low on-resistance,
impressively high dv/dt and excellent avalanche
characteristics and dynamic performances.
Applications
■ Switching applications
Order codes
Part number
Marking
Package
Packaging
STB20NM50
STB20NM50-1
STP20NM50
B20NM50
B20NM50-1
P20NM50
D²PAK
I²PAK
Tape & reel
Tube
TO-220
TO-220FP
Tube
STP20NM50FP
P20NM50FP
Tube
January 2007
Rev 13
1/14
www.st.com
14
Contents
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value
D²PAK / I²PAK
Parameter
Unit
TO-220FP
TO-220
VDS
VGS
ID
Drain source voltage
500
30
V
V
Gate-source voltage
20 (1)
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
20
12.6
80
A
12.6 (1)
A
ID
(2)
80 (1)
Drain current (pulsed)
A
IDM
PTOT
Total dissipation at TC = 25°C
Derating factor
192
45
W
1.54
0.36
W/°C
V/ns
dv/dt (3)
VISO
Peak diode recovery voltage slope
15
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
Tj
Operating junction temperature
Storage temperature
-65 to 150
°C
Tstg
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD < 20A, di/dt < 400A/µs, VDD < V(BR)DSS, TJ < TJMAX
Table 2.
Symbol
Thermal data
Value
Parameter
Unit
D²PAK / I²PAK
TO-220
TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
0.65
2.8
°C/W
°C/W
62.5
Maximum lead temperature for soldering
Tl
300
°C
purpose
Table 3.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAR
10
A
Single pulse avalanche energy
EAS
650
mJ
(starting Tj=25°C, ID= 5A, VDD= 50V)
3/14
Electrical characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250µA, VGS= 0
500
V
V
DS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating @125°C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS = 30V
±100
µA
VGS(th)
RDS(on)
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 10 A
Gate threshold voltage
3
4
5
V
Static drain-source on
resistance
0.20
0.25
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
V
DS > ID(ON) x RDS(ON)max,
(1)
Forward transconductance
10
S
gfs
ID = 10A
Input capacitance
Ciss
Coss
Crss
1480
285
34
pF
pF
pF
VDS =25V, f=1 MHz,
VGS=0
Output capacitance
Reverse transfer
capacitance
Coss eq.
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
130
1.6
pF
(2)
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
Rg
Gate input resistance
Ω
Qg
Qgs
Qgd
VDD=400V, ID = 20A
VGS =10V
Total gate charge
Gate-source charge
Gate-drain charge
40
13
19
56
nC
nC
nC
(see Figure 15)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/14
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
24
16
ns
ns
VDD=250 V, ID=10A,
RG=4.7Ω, VGS=10V
(see Figure 14)
Turn-off delay time
Fall time
40
12
ns
ns
tr(Voff)
VDD=400 V, ID=20A,
RG=4.7Ω, VGS=10V
(see Figure 16)
Off-voltage rise time
Fall time
9
ns
ns
ns
tf
8.5
23
Cross-over time
tc
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
Source-drain current
20
80
A
A
(1)
Source-drain current (pulsed)
ISDM
(2)
ISD=20A, VGS=0
Forward on voltage
1.5
V
VSD
trr
ISD=20A,di/dt=100A/µs,
VDD=100 V, Tj= 25°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
350
4.6
26
ns
µC
A
Qrr
(see Figure 16)
IRRM
trr
ISD=20A,di/dt=100A/µs,
VDD=100 V, Tj=150°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
435
5.9
27
ns
µC
A
Qrr
(see Figure 16)
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration 300µs duty cycle 1.5%
5/14
Electrical characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220/
D²PAK/I²PAK
Figure 2. Thermal impedance for TO-220/
D²PAK/I²PAK
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characteristics
Figure 6.
Transfer characteristics
6/14
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Electrical characteristics
Figure 7. Transconductance
Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature temperature
7/14
Electrical characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Figure 13. Source-drain diode forward
characteristics
8/14
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Test circuit
3
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
9/14
Package mechanical data
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/14
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Package mechanical data
TO-220 MECHANICAL DATA
mm.
TYP
inch
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
TYP.
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/14
Package mechanical data
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
12/14
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Revision history
5
Revision history
Table 8.
Date
revision history
Revision
Changes
09-Sep-2004
04-Sep-2006
15-Dec-2006
08-Jan-2007
26-Jan-2007
9
Final version
10
11
12
13
The document has been reformatted
Modified Table 7.: Source drain diode
Modified value in order code
Modified Table 6.: Switching times
13/14
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
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