STB20NM60D [STMICROELECTRONICS]
N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET; N沟道600V - 0.26ヘ - 20A - D2PAK FDmesh⑩功率MOSFET
| 型号： | STB20NM60D |
| 厂家： | 
ST |
| 描述： | N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET |
| 文件： | 总13页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB20NM60D
N-channel 600V - 0.26Ω - 20A - D2PAK
FDmesh™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
Pw
STB20NM60D
600V
<0.29Ω 20A 45W
■ High dv/dt and avalanche capabilities
■ 100% Avalanche tested
3
1
■ Low input capacitance and gate charge
■ Low gate input resistance
D²PAK
■ Tight process control and high manufacturing
yields
Description
Internal schematic diagram
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STB20NM60D
B20NM60D
D²PAK
Tape & reel
June 2006
Rev 1
1/13
www.st.com
13
Contents
STB20NM60D
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB20NM60D
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
600
600
30
V
V
VDGR Drain-gate voltage (RGS = 20 kΩ)
VGS
ID
Gate- source voltage
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
20
A
ID
12.6
80
A
(1)
IDM
PTOT
A
Total dissipation at TC = 25°C
Derating factor
192
1.20
20
W
W/°C
V/ns
°C
dv/dt (2) Peak diode recovery voltage slope
Tj
Operating junction temperature
Storage temperature
– 65 to 150
Tstg
°C
1. Pulse width limited by safe operating area
2. ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
0.65
62.5
°C/W
°C/W
Maximum lead temperature for soldering
purpose
Tl
300
°C
Table 3.
Symbol
Avalanche data
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAR
10
A
Single pulse avalanche energy
EAS
700
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
3/13
Electrical characteristics
STB20NM60D
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test condictions
Min Typ Max Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250µA, VGS = 0
600
V
Zero gate voltage
V
DS = Max rating
1
µA
µA
IDSS
drain current (VGS = 0)
VDS = Max rating, TC = 125 °C
10
Gate-body leakage
current (VDS = 0)
10
0
IGSS
VGS = 30V
µA
V
VGS(th)
RDS(on)
Gate threshold voltage
VDS = VGS, ID = 250µA
VGS = 10V, ID = 10A
3
4
5
Static drain-source on
resistance
0.26 0.29
Ω
Table 5.
Symbol
Dynamic
Parameter
Test condictions
Min Typ Max Unit
VDS > ID(on) x RDS(on)max,
ID = 10A
(1)
gfs
Forward transconductance
9
S
Ciss
Coss
Crss
Input capacitance
1300
500
35
pF
pF
pF
Output capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Reverse transfer capacitance
(2)
Coss eq.
Equivalent output capacitance VGS = 0V, VDS = 0V to 480V
f=1 MHz Gate DC Bias = 0
190
pF
RG
Gate input resistance
Test signal level = 20mV
open drain
2.7
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480V, ID = 20A,
VGS = 10V
37
10
17
52
nC
nC
nC
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
4/13
STB20NM60D
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Switching times
Parameter
Symbol
Test condictions
VDD = 300V, ID = 10A
RG = 4.7Ω VGS = 10V
(see Figure 12)
td(on)
tr
Turn-on delay time
Rise time
25
12
ns
ns
tr(Voff)
Off-voltage rise time
Fall time
8
ns
ns
ns
VDD = 480 V, ID = 20A,
RG = 4.7Ω, VGS = 10V
(see Figure 12)
tf
22
30
tc
Cross-over time
Table 7.
Symbol
Source drain diode
Parameter
Test condictions
Min Typ. Max Unit
ISD
Source-drain current
20
80
A
A
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 20 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 25°C
di/dt =100A/µs,VDD=60V
(see Figure 17)
240
1800
16
ns
nC
A
Qrr
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 150°C
di/dt =100A/µs,VDD=60V
(see Figure 17)
396
2960
20
ns
nC
A
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
5/13
Electrical characteristics
STB20NM60D
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
6/13
STB20NM60D
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/13
Test circuit
STB20NM60D
3
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped inductive load test
circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
8/13
STB20NM60D
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/13
Package mechanical data
STB20NM60D
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
1
10/13
STB20NM60D
Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
11/13
Revision history
STB20NM60D
6
Revision history
Table 8.
Date
08-Jun-2006
Revision history
Revision
Changes
1
First release
12/13
STB20NM60D
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