STB20NM50FD_08 [STMICROELECTRONICS]
N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET; N沟道500 V， 0.22 Ω ， 20 A D2PAK ， TO- 220FP ， TO- 220 FDmesh ™功率MOSFET
| 型号： | STB20NM50FD_08 |
| 厂家： | 
ST |
| 描述： | N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET |
| 文件： | 总16页 (文件大小：404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB20NM50FD
STF20NM50FD - STP20NM50FD
N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220
FDmesh™ Power MOSFET (with fast diode)
Features
RDS(on)
max
Type
VDSS
RDS(on)* Qg
ID
STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
20 A
20 A
20 A
3
3
2
2
1
1
TO-220
TO-220FP
3
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
1
D²PAK
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Tight process control and high manufacturing
yields
Figure 1.
Internal schematic diagram
Application
■ Switching applications
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Table 1.
Device summary
Order codes
Marking
Package
D²PAK
Packaging
STB20NM50FD
STF20NM50FD
STP20NM50FD
B20NM50FD
F20NM50FD
P20NM50FD
Tape and reel
Tube
TO-220FP
TO-220
Tube
April 2008
Rev 9
1/16/
www.st.com
16
Contents
STB20NM50FD - STF20NM50FD - STP20NM50FD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
D²PAK
TO-220
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS=0)
500
30
V
V
A
A
Gate-source voltage
20 (1)
14(1)
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
20
14
ID
(2)
80(1)
45
Drain current (pulsed)
80
A
W
IDM
PTOT
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
192
dv/dt (3)
20
V/ns
Insulation withstand voltage (RMS) from all three
leads to external heat sink
VISO
--
2500
V
(t=1 s;TC=25 °C)
Tstg
Tj
Storage temperature
-65 to 150
150
°C
°C
Operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 20 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
TO-220
D²PAK
TO-220FP
Unit
°C/W
°C/W
°C/W
Rthj-case
Rthj-amb
Rthj-pcb
Thermal resistance junction-case max
Thermal resistance junction-amb max
Thermal resistance junction-pcb max
0.65
2.8
62.5
--
62.5
--
--
30
Maximum lead temperature for
soldering purposes
Tl
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAS
10
A
Single pulse avalanche energy
EAS
700
mJ
(starting Tj = 25 °C, ID = IAS, VDD = 35 V)
3/16
Electrical characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250 µA, VGS= 0
500
V
V
DS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating,@125 °C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS
=
30 V
100
nA
VGS(th)
RDS(on)
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 10 A
Gate threshold voltage
3
4
5
V
Static drain-source on
resistance
0.22
0.25
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
VDS > ID(on) x RDS(on)max
ID= 10 A
,
(1)
gfs
Forward transconductance
9
S
Input capacitance
Ciss
Coss
Crss
1380
290
40
pF
pF
pF
VDS = 25V, f =1 MHz,
VGS = 0
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
VGS = 0, VDS = 0 to 400 V
Coss eq.
130
2.8
pF
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
Rg
Gate input resistance
Ω
VDD = 400 V, ID = 20 A
VGS = 10 V
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
38
18
10
53
nC
nC
nC
(see Figure 16)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
Electrical characteristics
Min Typ Max Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
VDD = 250 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
td(on)
tr
Turn-on delay time
Rise time
22
20
ns
ns
tr(Voff)
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Off-voltage rise time
Fall time
6
ns
ns
ns
tf
15
30
Cross-over time
tc
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ Max Unit
ISD
Source-drain current
20
80
A
A
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 20 A, VGS=0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
245
2
ns
nC
A
ISD =20 A, di/dt =100 A/µs,
VDD = 60 V, TJ=150 °C
Qrr
(see Figure 17)
IRRM
16
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
5/16
Electrical characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
D²PAK
Figure 3. Thermal impedance for TO-220 /
D²PAK
Figure 4. Safe operating area for TO-220FP
Figure 6. Output characteristics
6/16
Figure 5. Thermal impedance for TO-220FP
Figure 7. Transfer characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
Figure 8. Transconductance
Electrical characteristics
Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature temperature
7/16
Electrical characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
Figure 14. Source-drain diode forward
characteristics
8/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
Test circuit
3
Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped Inductive load test
circuit
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
9/16
Package mechanical data
STB20NM50FD - STF20NM50FD - STP20NM50FD
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
11/16
Package mechanical data
STB20NM50FD - STF20NM50FD - STP20NM50FD
TO-220FP mechanical data
mm.
Typ
inch
Typ.
Dim.
Min.
4.40
2.5
Max.
4.60
2.7
Min.
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
D
2.5
2.75
0.70
1.00
1.50
1.50
5.20
2.70
10.40
E
0.45
0.75
1.15
1.15
4.95
2.40
10
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
16
0.630
28.6
9.80
2.9
30.6
10.60
3.6
1.126
0.385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
15.90
9
16.40
9.30
3.2
3
L3
L6
L7
Dia
1
2 3
L5
L2
L4
7012510-I
12/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
Package mechanical data
D²PAK (TO-263) mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.181
0.009
0.037
0.067
0.024
0.053
0.368
b2
c
c2
D
D1
E
10.40
0.409
E1
e
8.50
2.54
0.1
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.208
0.624
0.106
0.110
0.055
0.069
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.051
0.4
0.016
V2
0°
8°
0°
8°
0079457_M
13/16
Packaging mechanical data
STB20NM50FD - STF20NM50FD - STP20NM50FD
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
14/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
Revision history
6
Revision history
Table 9.
Date
Document revision history
Revision
Changes
21-Jun-2004
21-Apr-2008
8
Figure 4: Safe operating area for TO-220FP and Figure 5: Thermal
impedance for TO-220FP added.
9
15/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
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