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STB20NM50-1 [STMICROELECTRONICS]

N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET; N沟道500V - 0.20ohm - 20A TO- 220 / FP / D2PAK / I2PAK的MDmesh功率MOSFET ？
STB20NM50-1
型号： STB20NM50-1
厂家： ST    ST
描述：

N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET
N沟道500V - 0.20ohm - 20A TO- 220 / FP / D2PAK / I2PAK的MDmesh功率MOSFET ？

晶体 晶体管 功率场效应晶体管 开关 脉冲
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中文：  中文翻译
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STB20NM50 - STB20NM50-1  
STP20NM50 - STP20NM50FP  
N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK  
Zener-Protected SuperMESH™ MOSFET  
General features  
Package  
V
DSS(@Tj  
max)  
R
I
D
Type  
DS(on)  
STB20NM50  
STB20NM50-1  
STP20NM50  
550 V  
550 V  
550 V  
550 V  
<0.25 Ω  
<0.25 Ω  
<0.25 Ω  
<0.25 Ω  
20 A  
20 A  
20 A  
20 A  
3
2
1
3
2
1
I²PAK  
TO-220  
STP20NM50FP  
■ HIGH dv/dt AND AVALANCHE CAPABILITIES  
■ 100% AVALANCHE TESTED  
3
3
2
1
1
TO-220FP  
D²PAK  
■ LOW INPUT CAPACITANCE AND GATE  
CHARGE  
■ LOW GATE INPUT RESISTANCE  
Internal schematic diagram  
Description  
The MDmesh™ is a new revolutionary MOSFET  
technology that associates the Multiple Drain  
process  
with  
the  
Company’s  
PowerMESH™horizontal layout. The resulting  
product has an outstanding low on-resistance,  
impressively high dv/dt and exellent avalanche  
characteristics and dynamic performances.  
Applications  
The MDmesh™ family is very suitable for  
increasing power density of high voltage  
converters allowing system miniaturization  
andhiher efficiencies  
Order codes  
Sales Type  
Marking  
Package  
Packaging  
STB20NM50T4  
STB20NM50-1  
STP20NM505  
STP20NM50FP  
B20NM50  
B20NM50-1  
P20NM50  
D²PAK  
I²PAK  
TAPE & REEL  
TUBE  
TO-220  
TO-220FP  
TUBE  
P20NM50FP  
TUBE  
Rev 2  
1/16  
September 2005  
www.st.com  
16  
1 Electrical ratings  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
1
Electrical ratings  
Table 1.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
TO-220/D²PAK/I²PAK  
Unit  
TO-220FP  
V
Gate-Source Voltage  
± 30  
V
A
A
A
GS  
I
Drain Current (continuous) at T = 25°C  
20  
12.6  
80  
20 (Note 3)  
12.6 (Note 3)  
80 (Note 3)  
45  
D
C
I
Drain Current (continuous) at T = 100°C  
D
C
I
Note 2  
Drain Current (pulsed)  
DM  
P
Total Dissipation at T = 25°C  
192  
1.2  
W
W/°C  
V/ns  
V
TOT  
C
Derating Factor  
0.36  
dv/dt Note 1 Peak Diode Recovery voltage slope  
15  
V
Insulation Withstand Volatge (DC)  
--  
2000  
ISO  
T
Operating Junction Temperature  
Storage Temperature  
j
-65 to 150  
°C  
T
stg  
Table 2.  
Thermal data  
TO-220/D²PAK/I²PAK  
TO-220FP  
Unit  
Rthj-case Thermal Resistance Junction-case Max  
0.65  
62.5  
2.8  
°C/W  
°C/W  
Rthj-amb  
Thermal Resistance Junction-amb Max  
Maximum Lead Temperature For Soldering  
Purpose  
T
300  
°C  
l
Table 3.  
Avalanche characteristics  
Parameter  
Symbol  
Max Value  
Unit  
Avalanche Current, repetitive or  
Not-Repetitive (pulse width limited by Tj max)  
I
10  
A
AR  
Single Pulse Avalanche Energy  
E
650  
mJ  
AS  
(starting Tj=25°C, I =5A, V = 50V)  
D
DD  
2/16  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
2 Electrical characteristics  
2
Electrical characteristics  
(T  
= 25 °C unless otherwise specified)  
CASE  
Table 4.  
On/off states  
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Drain-Source Breakdown  
Voltage  
V
I = 250µA, V = 0  
500  
V
(BR)DSS  
D
GS  
V
= Max Rating,  
1
µA  
µA  
Zero Gate Voltage Drain  
DS  
DS  
I
I
DSS  
Current (V = 0)  
V
= Max Rating,Tc = 125°C  
10  
GS  
Gate Body Leakage Current  
V
= ±30V  
±100  
µA  
GSS  
GS  
(V = 0)  
DS  
V
R
V
V
= V , I = 250 µA  
Gate Threshold Voltage  
3
4
5
V
GS(th)  
DS  
GS  
D
Static Drain-Source On  
Resistance  
= 10 V, I = 10 A  
0.20  
0.25  
Ω
DS(on)  
GS  
D
Table 5.  
Symbol  
Dynamic  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
> I  
xR  
D(ON) DS(ON)max,  
DS  
g
Note 4  
Forward Transconductance  
10  
S
fs  
I
= 10A  
D
C
C
iss  
Input Capacitance  
1480  
285  
34  
pF  
pF  
pF  
V
V
=25V, f=1 MHz, V =0  
Output Capacitance  
oss  
DS  
GS  
Reverse Transfer Capacitance  
C
rss  
C
oss eq.  
=0, V =0V to 400V  
Equivalent Ouput Capacitance  
Gate Input Resistance  
130  
1.6  
pF  
GS  
DS  
Note 5  
f=1MHz Gate DC Bias=0  
Test Signal Level=20mV  
Open Drain  
Rg  
Ω
Q
V
V
=400V, I = 20A  
g
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
40  
13  
19  
56  
nC  
nC  
nC  
DD  
GS  
D
Q
=10V  
gs  
Q
(see Figure 15)  
gd  
3/16  
2 Electrical characteristics  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
Table 6.  
Symbol  
Switching times  
Parameter  
Test Conditions  
=250 V, I =10A,  
Min.  
Typ.  
Max.  
Unit  
V
DD  
D
t
Turn-on Delay Time  
Rise Time  
24  
16  
ns  
ns  
d(on)  
R =4.7Ω, V =10V  
G
GS  
t
r
(see Figure 16)  
=400 V, I =20A,  
t
V
r(Voff)  
Off-voltage Rise Time  
Fall Time  
9
ns  
ns  
ns  
DD  
D
t
R =4.7Ω, V =10V  
8.5  
23  
f
G
GS  
Cross-over Time  
t
(see Figure 16)  
c
Table 7.  
Symbol  
Source drain diode  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
Source-drain Current  
20  
80  
A
A
SD  
I
Note 2 Source-drain Current (pulsed)  
SDM  
V
Note 4  
I
I
=20A, V =0  
Forward on Voltage  
1.5  
V
SD  
SD  
GS  
t
rr  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
350  
4.6  
26  
ns  
µC  
A
=20A, di/dt = 100A/µs,  
SD  
Q
rr  
V
=100 V, Tj=25°C  
DD  
I
I
RRM  
t
rr  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
435  
5.9  
27  
ns  
µC  
A
I
=20A, di/dt = 100A/µs,  
SD  
Q
rr  
RRM  
V
=100 V, Tj=150°C  
DD  
(1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX  
(2) Pulse width limited by safe operating area  
(3) Limited only by maximum temperature allowed  
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%  
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0  
to 80% VDSS  
4/16  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
2 Electrical characteristics  
2.1  
Electrical Characteristics (curves)  
Figure 1. Safe Operating Area for  
TO-220/D²PAK/I²PAK  
Figure 2. Thermal Impedance for  
TO-220/D²PAK/I²PAK  
Figure 3. Safe Operating Area for TO-220FP  
Figure 4. Thermal Impedance for TO-220FP  
Figure 5. Output Characteristics  
Figure 6. Transfer Characteristics  
5/16  
2 Electrical characteristics  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
Figure 8. Static Drain-Source on Resistance  
Figure 7. Transconductance  
Figure 9. Gate Charge vs Gate -Source  
Voltage  
Figure 11. Capacitance Variations  
Figure 10. Normalized Gate Threshold Voltage Figure 12. Normalized on Resistance vs  
vs Temperatute Temperature  
6/16  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
2 Electrical characteristics  
Figure 13. Source-drain Diode Forward  
Characteristics  
7/16  
3 Test circuits  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
3
Test circuits  
Figure 14. Switching Times Test Circuit For  
Resistive Load  
Figure 15. Gate Charge Test Circuit  
Figure 16. Test Circuit For Indictive Load  
Switching and Diode Recovery  
Times  
Figure 18. Unclamped Inductive Load Test  
Circuit  
Figure 17. Unclamped Inductive Waveform  
8/16  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
4 Package mechanical data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in compliance  
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also  
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are  
available at: www.st.com  
9/16  
4 Package mechanical data  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
TO-220 MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.40  
0.61  
1.15  
0.49  
15.25  
10  
MAX.  
4.60  
0.88  
1.70  
0.70  
15.75  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
MIN.  
0.173  
0.024  
0.045  
0.019  
0.60  
MAX.  
0.181  
0.034  
0.066  
0.027  
0.620  
0.409  
0.106  
0.202  
0.052  
0.256  
0.107  
0.551  
0.154  
A
b
b1  
c
D
E
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
3.50  
3.93  
16.40  
28.90  
0.645  
1.137  
3.75  
2.65  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
10/16  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
4 Package mechanical data  
TO-220FP MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L5  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
1.126  
.0385  
0.114  
0.626  
0.354  
0.118  
1.204  
0.417  
0.141  
0.645  
0.366  
0.126  
16.4  
9.3  
3
3.2  
L3  
L6  
L7  
1
2 3  
L5  
L2  
L4  
11/16  
4 Package mechanical data  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
2
TO-262 (I PAK) MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.40  
2.40  
0.61  
1.14  
0.49  
1.23  
8.95  
2.40  
4.95  
10  
MAX.  
4.60  
2.72  
0.88  
1.70  
0.70  
1.32  
9.35  
2.70  
5.15  
10.40  
14  
MIN.  
0.173  
0.094  
0.024  
0.044  
0.019  
0.048  
0.352  
0.094  
0.194  
0.393  
0.511  
0.137  
0.050  
MAX.  
0.181  
0.107  
0.034  
0.066  
0.027  
0.052  
0.368  
0.106  
0.202  
0.410  
0.551  
0.154  
0.055  
A
A1  
b
b1  
c
c2  
D
e
e1  
E
L
13  
L1  
L2  
3.50  
1.27  
3.93  
1.40  
12/16  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
4 Package mechanical data  
D2PAK MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.027  
0.044  
0.017  
0.048  
0.352  
MAX.  
0.181  
0.106  
0.009  
0.036  
0.067  
0.023  
0.053  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
10.4  
0.393  
E1  
G
8.5  
4.88  
15  
5.28  
15.85  
1.4  
0.192  
0.590  
0.050  
0.055  
0.094  
0.208  
0.625  
0.055  
0.068  
0.126  
L
L2  
L3  
M
1.27  
1.4  
1.75  
3.2  
2.4  
R
0.4  
0.015  
V2  
0º  
4º  
3
1
13/16  
5 Packing mechanical data  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
5
Packing mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
24.4  
100  
0.059  
13.2 0.504 0.520  
0795  
26.4 0.960 1.039  
3.937  
30.4  
1.197  
BASE QTY  
BULK QTY  
1000  
TAPE MECHANICAL DATA  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7 0.413 0.421  
15.7 15.9 0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059 0.063  
D1  
E
1.59 1.61 0.062 0.063  
1.65 1.85 0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449 0.456  
5.0 0.189 0.197  
4.1 0.153 0.161  
12.1 0.468 0.476  
2.1 0.075 0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35 0.0098 0.0137  
23.7 24.3 0.933 0.956  
W
* on sales type  
14/16  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
6 Revision History  
6
Revision History  
Date  
Revision  
Changes  
05-Sep-2005  
2
Inserted Ecopack indication  
15/16  
6 Revision History  
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2005 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
16/16  

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