STB20NM50FD [STMICROELECTRONICS]
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh⑩Power MOSFET With FAST DIODE; N沟道500V - 0.20ohm - 20A D2PAK FDmesh⑩Power MOSFET，具有快速二极管
| 型号： | STB20NM50FD |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh⑩Power MOSFET With FAST DIODE |
| 文件： | 总7页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB20NM50FD
2
N-CHANNEL 500V - 0.20Ω - 20A D PAK
FDmesh™Power MOSFET (With FAST DIODE)
PRELIMINARY DATA
TYPE
V
DSS
R
I
D
DS(on)
STB20NM50FD
500V
< 0.25Ω
20 A
TYPICAL R (on) = 0.20Ω
DS
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
3
1
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
2
D PAK
DESCRIPTION
The FDmesh™ associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
500
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
Drain-gate Voltage (R = 20 kΩ)
500
V
DGR
GS
V
GS
Gate- source Voltage
±30
V
I
D
Drain Current (continuos) at T = 25°C
20
A
C
I
Drain Current (continuos) at T = 100°C
14
A
D
C
I
( )
Drain Current (pulsed)
80
A
DM
P
TOT
Total Dissipation at T = 25°C
192
W
C
Derating Factor
0.88
6
W/°C
V/ns
°C
°C
dv/dt
Peak Diode Recovery voltage slope
Storage Temperature
T
stg
–65 to 150
150
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
November 2001
1/7
STB20NM50FD
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
0.65
62.5
300
°C/W
°C/W
°C
Rthj-amb
Max
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
10
A
AR
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
700
mJ
(starting T = 25 °C, I = I , V = 35 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
500
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
100
±100
DS
GS
C
I
Gate-body Leakage
= ±30V
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
4
Max.
5
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
3
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 10A
0.20
0.25
Ω
DS(on)
GS
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
9
S
I
D
= 10A
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
1480
285
pF
pF
iss
oss
Reverse Transfer
Capacitance
C
34
pF
pF
rss
C
(2) Equivalent Output
Capacitance
V
GS
= 0V, V = 0V to 400V
130
oss eq.
DS
R
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.7
Ω
G
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C
V
is defined as a constant equivalent capacitance giving the same charging time as C when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
2/7
STB20NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 250V, I = 10A
Turn-on Delay Time
24
ns
d(on)
DD
D
= 4.7Ω V = 10V
G
GS
t
r
Rise Time
16
ns
(see test circuit, Figure 3)
Q
V
V
= 400V, I = 20A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
40
13
19
56
nC
nC
nC
g
DD
D
GS
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
9
Max.
Unit
ns
t
V
R
= 400V, I = 20A,
r(Voff)
DD
D
= 4.7Ω, V = 10V
G
GS
t
8.5
23
ns
f
(see test circuit, Figure 5)
t
Cross-over Time
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
20
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
80
A
SDM
V
I
I
= 20A, V = 0
1.5
V
SD
SD
GS
t
rr
= 20A, di/dt = 100A/µs,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
220
1.6
15
ns
µC
A
SD
V
= 50V
DD
Q
rr
(see test circuit, Figure 5)
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/7
STB20NM50FD
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/7
STB20NM50FD
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
TYP.
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
3
5/7
1
STB20NM50FD
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
6/7
STB20NM50FD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
7/7
相关型号：
STB20NM50FD-1
N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh⑩ Power MOSFET with FAST DIODE
STMICROELECTR
STB20NM50FD_08
N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明