BUT90 [STMICROELECTRONICS]
HIGH POWER NPN SILICON TRANSISTOR; 高功率NPN硅晶体管
| 型号： | BUT90 |
| 厂家： | 
ST |
| 描述： | HIGH POWER NPN SILICON TRANSISTOR |
| 文件： | 总4页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUT90
HIGH POWER NPN SILICON TRANSISTOR
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SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
HIGH RUGGEDNESS
LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
1
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UNINTERRUPTABLE POWER SUPPLY
MOTOR CONTROL
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
2
TO-3
(version "S")
DESCRIPTION
The BUT90 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = -1.5 V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
200
Unit
V
V
125
10
V
50
A
ICM
Collector Peak Current
120
A
IB
Base Current
12
A
IBM
Base Peak Current
32
A
o
Ptot
Total Power Dissipation at Tcase ≤ 25 C
250
W
oC
oC
Tstg
Tj
Storage Temperature
Junction Temperature
-65 to 200
200
1/4
April 1997
BUT90
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.17
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 10 Ω)
VCE = VCEV
VCE = VCEV Tc = 100 C
0.4
4
mA
mA
o
ICEV
IEBO
Collector Cut-off
Current
VCE = VCEV VBE = -1.5V
VCE = VCEV VBE = -1.5V Tc = 100 C
0.2
2
mA
mA
o
Emitter Cut-off
Current (IC = 0)
VEB = 7 V
1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 0.2 A
L = 25 mH
125
10
V
VEB0
Emitter-Base Voltage IE = 50 mA
(IC = 0)
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 35 A
IC = 70 A
IC = 35 A
IC = 70 A
IB = 1.75 A
IB = 7 A
IB = 1.75 A
IB = 7 A
0.55
0.8
0.75
1.2
0.9
0.9
1.2
1.5
V
V
V
V
o
Tc = 100 C
o
Tc = 100 C
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 35 A
IC = 70 A
IC = 35 A
IC = 70 A
IB = 1.75 A
IB = 7 A
IB = 1.75 A
IB = 7 A
1
1.45
1
1.3
1.8
1.4
2
V
V
V
V
o
Tc = 100 C
o
Tc = 100 C
1.65
RESISTIVE LOAD
Symbol
Parameter
Rise Time
Storage Time
Test Conditions
Min.
Typ.
Max.
Unit
tr
ts
tf
VCC = 100 V
IC = 70 A
0.8
0.9
0.2
1.2
1.5
0.4
µs
µs
µs
IB1 = - IB2 = 7 A
tp = 30 µs
Fall Time
tr
ts
tf
Rise Time
Storage Time
Fall Time
VCC = 100 V
IC = 70 A
tp = 30 µs
1.1
1.2
0.3
1.6
2
0.6
µs
µs
µs
IB1 = - IB2 = 7 A
o
Tc = 100 C
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ts
tf
Storage Time
Fall Time
VCC = 100 V
IC = 70 A
VClamp = 125 V
IB1 = - IB2 = 7 A
1.25
0.16
2
0.3
ms
µs
LC = 70 µH
ts
tf
Storage Time
Fall Time
VCC = 100 V
IC = 70 A
LC = 70 µH
VClamp = 125 V
IB1 = - IB2 = 7 A
Tc = 100 C
1.5
0.25
2.2
0.5
µs
µs
o
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
2/4
BUT90
TO-3 (version S) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
11.00
1.47
TYP.
MAX.
13.10
1.60
MIN.
0.433
0.058
0.059
0.327
0.748
0.421
0.649
0.984
0.157
1.515
1.187
MAX.
0.516
0.063
0.065
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
A
B
C
D
E
G
N
P
R
U
V
1.50
1.65
8.32
8.92
19.00
10.70
16.50
25.00
4.00
20.00
11.10
17.20
26.00
4.09
38.50
30.00
39.30
30.30
A
D
P
C
G
R
P003O
3/4
BUT90
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
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