SSG4424 [SECOS]
N-Channel Enhancement Mode Power Mos.FET; N沟道增强模式电源Mos.FET
| 型号： | SSG4424 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode Power Mos.FET |
| 文件： | 总4页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4424
13.8A, 30V,RDS(ON) 9m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
o
0.375 REF
6.20
ruggedized device design, Ultra low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
5.80
0.25
3.80
4.00
1.27 Typ.
0.35
0.49
0.10 0.25
4.80
5.00
1.35
1.75
o
8 o
Features
Dimensions in millimeters
D
D
D
D
* Low on-resistance
8
6
5
7
D
* Simple drive requirement
* Fast switching Characteristic
4424SC
Date Code
G
2
1
3
4
S
S
S
S
G
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
Unit
V
30
±20
13.8
11
Gate-Source Voltage
VGS
V
A
Continuous Drain Current3
Continuous Drain Current 3
Pulsed Drain Current1
ID@TA=25 oC
oC
ID@TA=70
A
A
50
IDM
Total Power Dissipation
PD@TA=25 o
C
2.5
0.02
W
W/oC
oC
Linear Derating Factor
-55~+150
Tj, Tstg
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
oC /W
Thermal Resistance Junction-ambient3
Rthj-a
50
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSG4424
Ω
13.8A, 30V,RDS(ON) 9m
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
V
VGS=0V, ID=250uA
30
_
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Reference to 25oC,ID=1mA
VDS=VGS, ID=250uA
V/o
C
_
BVDS/ Tj
0.02
_
V
VGS(th)
1.0
_
3.0
_
_
±
±
VGS= 20V
100
nA
uA
uA
IGSS
IDSS
Gate-Source Leakage Current
oC
_
VDS=30V,VGS=0
VDS=24V,VGS=0
Drain-Source Leakage Current (Tj=25 )
1
Drain-Source Leakage Current (Tj=70o )
C
_
_
_
_
_
25
9
VGS=10V, ID=13A
VGS=4.5V, ID=10A
Static Drain-Source On-Resistance2
mΩ
RDS(ON)
_
_
14
Total Gate Charge2
35
_
Qg
23
6
ID=10A
_
_
VDS=15V
VGS=5V
nC
Gate-Source Charge
Gate-Drain ("Miller") Charge
Qgs
_
_
Qgd
15
13
9
_
_
Turn-on Delay Time 2
Rise Time
Td(ON)
VDD=25V
ID=1A
_
_
_
Tr
VGS=5V
nS
_
Ω
RG=3.3
Td(Off)
Turn-off Delay Time
Fall Time
35
17
Ω
RD=25
_
_
_
_
T
f
3070
_
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1920
410
300
21
Ciss
Coss
Crss
VGS=0V
VDS=15V
f=1.0MHz
pF
_
_
_
VDS=10V, ID=13A
Gfs
Rg
Forward Transconductance
Gate Resistance
S
_
_
Ω
f=1.0MHz
0.9
Source-Drain Diode
Parameter
Symbol
VDS
Max.
Min.
Typ.
Unit
Test Condition
_
_
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
1.2
_
IS=2.1A, VGS=0V.
V
_
_
Trr
33
26
nS
nC
Is=13A, VGS=0V
dl/dt=100A/uS
_
Qrr
Notes: 1.Pulse width limited by safe operating area.
≦
≦
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SSG4424
Ω
13.8A, 30V,RDS(ON) 9m
Elektronische Bauelemente
Characteristics Curve
N-Channel Enhancement Mode Power Mos.FET
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 4
SSG4424
Ω
13.8A, 30V,RDS(ON) 9m
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
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