SSG4501 [SECOS]
Enhancement Mode Power Mos.FET; 增强模式电源Mos.FET
| 型号： | SSG4501 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Enhancement Mode Power Mos.FET |
| 文件： | 总9页 (文件大小：842K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4501
Ω
N Channel 7A, 30V,RDS(ON) 28m
Ω
P Channel -5.3A, -30V,RDS(ON) 50m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
o
0.375 REF
The SSG4501 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial
industrial surface mount application and suited for low
6.20
5.80
0.25
3.80
4.00
1.27Typ.
0.35
0.49
0.10~0.25
4.80
5.00
voltage applications such as DC/DC converters.
1.35
1.75
o
8 o
Features
Dimensions in millimeters
* Simple Drive Requirement
D1 D1 D2 D2
* Lower On-resistance
8
6
5
7
* Fast Switching Performance
D1
D2
4501SS
Date Code
G2
G1
S1
S2
2
1
3
4
S1 G1 S2 G2
Absolute Maximum Ratings
Ratings
Parameter
Symbol
Unit
V
Drain-Source Voltage
VDS
30
±20
7
-30
Gate-Source Voltage
VGS
±20
-5.3
-4.7
-20
V
A
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
ID@TA=25oC
ID@TA=70oC
IDM
5.8
20
A
A
Total Power Dissipation
PD@TA=25 o
C
2.0
W
W/oC
Linear Derating Factor
0.016
o
C
-55~+150
Tj, Tstg
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
oC /W
Thermal Resistance Junction-ambient3
62.5
Rthj-a
Max.
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 9
SSG4501
Ω
N Channel 7A, 30V,RDS(ON) 28m
Ω
P Channel -5.3A, -30V,RDS(ON) 50m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
Electrical Characteristics N Channel( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
VGS=0V, ID=250uA
BVDSS
V
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
30
_
Reference to 25o , ID=1mA
C
V/o
C
_
BVDS/ Tj
0.02
_
V
VGS(th)
1.0
_
VDS=VGS, ID=250uA
3.0
_
_
±
±
VGS= 20V
100
nA
uA
uA
IGSS
IDSS
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25o )
C
_
VDS=30V,VGS=0
VDS=24V,VGS=0
1
Drain-Source Leakage Current (Tj=70o )
C
_
_
_
_
_
25
VGS=10V, ID=7A
VGS=4.5V, ID=5A
28
42
_
Static Drain-Source On-Resistance2
mΩ
RDS(ON)
_
_
Total Gate Charge2
Qg
8.4
2.1
4.7
6
ID=7A
_
_
_
VDS=24V
VGS=4.5V
nC
Gate-Source Charge
Gate-Drain ("Miller") Charge
Qgs
_
_
Qgd
_
_
Turn-on Delay Time2
Rise Time
Td(ON)
VDD=15V
ID=1A
_
_
5.2
Tr
VGS=10V
nS
_
Ω
RG=3.3
Td(Off)
Turn-off Delay Time
Fall Time
18.8
4.4
645
150
95
Ω
RD=15
_
_
_
_
_
_
T
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0V
VDS=25V
f=1.0MHz
_
_
_
pF
S
_
VDS=10V, ID=7A
Gfs
Forward Transconductance
13
Source-Drain Diode
Parameter
Symbol
Max.
1.2
Min.
Typ.
Unit
V
Test Condition
IS=7A, VGS=0V.Tj=25oC
_
_
Forward On Voltage2
VSD
_
_
A
Is
Continous Source Current (Body Diode)
1.67
VD=VG=0V,VS=1.2V
Notes: 1.Pulse width limited by Max. junction temperature.
≦
≦
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 9
SSG4501
Ω
N Channel 7A, 30V,RDS(ON) 28m
Ω
P Channel -5.3A, -30V,RDS(ON) 50m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
Electrical Characteristics P-Channel( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
V
VGS=0V, ID=-250uA
-30
_
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Reference to 25o , ID=-1mA
C
V/o
C
_
BVDS/ Tj
-0.028
_
V
VGS(th)
-1.0
_
-3.0
VDS=VGS, ID=-250uA
_
_
±
±
VGS= 20V
100
nA
uA
uA
IGSS
IDSS
Gate-Source Leakage Current
_
Drain-Source Leakage Current (Tj=25o )
C
VDS=-30V,VGS=0
VDS=-24V,VGS=0
-1
oC
_
_
_
_
_
Drain-Source Leakage Current (Tj=70 )
-25
50
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
Static Drain-Source On-Resistance2
mΩ
RDS(ON)
_
_
90
_
Total Gate Charge2
Qg
20
3.5
2
ID=-5.3A
VDS=-15V
VGS=-10V
_
_
_
nC
Gate-Source Charge
Gate-Drain ("Miller") Charge
Qgs
_
_
Qgd
_
_
Turn-on Delay Time2
Rise Time
Td(ON)
12
20
VDS=-15V
ID=-1A
_
_
Tr
VGS=-10V
nS
_
Ω
RG=6
Td(Off)
Turn-off Delay Time
Fall Time
45
27
Ω
RD=15
_
_
_
_
_
_
_
T
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
790
440
120
VGS=0V
VDS=-15V
f=1.0MHz
pF
S
_
_
_
VDS=-10V, ID=-5.3A
Gfs
Forward Transconductance
8.5
Source-Drain Diode
Parameter
Symbol
Max.
-1.2
Min.
Typ.
Unit
V
Test Condition
IS=-2.6A,VGS=0V.Tj=25oC
_
_
Forward On Voltage2
VSD
_
_
A
Is
Continous Source Current (Body Diode)
-1.67
VD=VG=0V,VS=-1.2V
Notes: 1.Pulse width limited by Max. junction temperature.
≦
≦
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 9
SSG4501
Ω
N Channel 7A, 30V,RDS(ON) 28m
Ω
P Channel -5.3A, -30V,RDS(ON) 50m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 3. On-Resistance v.s. Gate Voltage
Fig 6. Type Power Dissipation
Fig 5. Maximum Drain Current
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Any changing of specification will not be informed individual
v.s. Case Temperature
01-Jun-2002 Rev. A
Page 4 of 9
SSG4501
Ω
N Channel 7A, 30V,RDS(ON) 28m
Ω
P Channel -5.3A, -30V,RDS(ON) 50m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
N-Channel
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 5 of 9
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
SSG4501
Ω
N Channel 7A, 30V,RDS(ON) 28m
Ω
P Channel -5.3A, -30V,RDS(ON) 50m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
N-Channel
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 6 of 9
SSG4501
Ω
N Channel 7A, 30V,RDS(ON) 28m
Ω
P Channel -5.3A, -30V,RDS(ON) 50m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 3. On-Resistance v.s. Gate Voltage
Fig 6. Type Power Dissipation
Fig 5. Maximum Drain Current
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Any changing of specification will not be informed individual
v.s. Case Temperature
01-Jun-2002 Rev. A
Page 7 of 9
SSG4501
Ω
N Channel 7A, 30V,RDS(ON) 28m
Ω
P Channel -5.3A, -30V,RDS(ON) 50m
Elektronische Bauelemente
P-Channel
Enhancement Mode Power Mos.FET
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 8 of 9
SSG4501
Ω
N Channel 7A, 30V,RDS(ON) 28m
Ω
P Channel -5.3A, -30V,RDS(ON) 50m
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
P-Channel
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
h tp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev.A
Page9 of9
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