SSG4490N [SECOS]
N-Ch Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | SSG4490N |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总2页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4490N
5.2 A, 100 V, RDS(ON) 78 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management In portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
SOP-8
B
L
D
M
A
C
J
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
N
E
K
H
G
F
Low thermal impedance copper leadframe
SOIC-8 saves board space.
Fast switching speed.
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
5.80
4.80
3.80
0°
6.20
5.00
4.00
8°
H
J
K
L
M
N
0.35
0.49
High performance trench technology.
0.375 REF.
45°
1.35
0.10
1.75
0.25
0.40
0.19
0.90
0.25
PACKAGE INFORMATION
0.25 REF.
G
1.27 TYP.
Package
MPQ
LeaderSize
SOP-8
2.5K
13’ inch
S
D
D
D
D
S
S
G
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
100
Unit
V
Gate-Source Voltage
VGS
±20
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
5.2
A
Continuous Drain Current 1
3.9
A
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
50
A
IS
2.3
A
PD @ TA = 25°C
PD @ TA = 70°C
TJ, TSTG
3.1
W
W
°C
Total Power Dissipation 1
2.2
Operating Junction & Storage Temperature Range
-55 ~ 150
Thermal Resistance Ratings
Thermal Resistance Junction-Case (Max.) 1
t≦5 sec
RθJC
RθJA
25
50
°C / W
°C / W
Thermal Resistance Junction-ambient (Max.) 1 t≦5 sec
Notes
1.
2.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Dec-2010 Rev. B
Page 1 of 2
SSG4490N
5.2 A, 100 V, RDS(ON) 78 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Static
Max.
Unit
Teat Conditions
Gate Threshold Voltage
VGS(th)
IGSS
1
-
-
-
±100
1
V
VDS= VGS, ID=-250μA
VDS= 0V, VGS=20V
VDS=80V, VGS=0V
Gate-Body Leakage Current
-
-
nA
μA
μA
A
-
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
ID(on)
-
-
25
-
VDS=80V, VGS=0V, TJ=55°C
20
-
-
VDS=5V, VGS=10V
VGS=10V, ID=5.2A
VGS=4.5V, ID=4.8A
VDS=15V, ID=5.2A
IS=2.3A, VGS=0V
-
78
92
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
Forward Transconductance 1
Diode Forward Voltage
gfs
-
40
S
V
VSD
-
0.7
-
Dynamic 2
12.5
Total Gate Charge
Qg
Qgs
Qgd
-
-
-
-
-
-
ID=5.2A
nC
nS
VDS=15V
Gate-Source Charge
Gate-Drain(“Miller”) Charge
2.6
VGS=4.5V
4.6
Switching
Turn-On Delay Time
Rise Time
Td(on)
Tr
-
-
-
-
20
9
-
-
-
-
VDD=25V
ID=1A
VGEN=10V
Turn-Off Delay Time
Fall Time
Td(off)
Tf
70
20
RL=25Ω
Notes
1.
2.
Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Dec-2010 Rev. B
Page 2 of 2
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