SSG4492N [SECOS]
N-Ch Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | SSG4492N |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总2页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4492N
9A, 100V, RDS(ON) 26m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOP-8
DESCRIPTION
These miniature surface mount MOSFETs
B
utilize a high cell density trench process to provide
low RDS(on) and to ensure minimal power loss and
heat dissipation.
L
D
M
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper lead frame
SOP-8 saves board space.
A
C
J
N
E
K
H
G
F
Fast switching speed.
High performance trench technology.
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
5.80
4.80
3.80
0°
0.40
0.19
6.20
5.00
4.00
8°
0.90
0.25
H
J
K
L
M
N
0.35
0.375 REF.
0.49
APPLICATION
45°
DC-DC converters and power management
1.35
0.10
0.25 REF.
1.75
0.25
in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular
and cordless telephones.
G
1.27 TYP.
PACKAGE INFORMATION
S
S
S
G
D
D
D
D
Package
MPQ
LeaderSize
SOP-8
2.5K
13’ inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
100
±20
9
V
V
A
TA = 25°C
TA = 70°C
Continuous Drain Current 1
Pulsed Drain Current 2
ID
7.3
A
IDM
IS
50
A
Continuous Source Current (Diode Conduction) 1
TA = 25°C
TA = 70°C
Operating Junction & Storage Temperature Range
2.3
A
3.1
W
W
°C
Total Power Dissipation 1
PD
2.2
TJ, TSTG
-55 ~ 150
Thermal Resistance Ratings
Maximum Junction to Case 1
Maximum Junction to Ambient 1
t ≦ 5 sec
t ≦ 5 sec
RθJC
RθJA
25
50
°C / W
°C / W
Notes:
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Feb-2011 Rev. A
Page 1 of 2
SSG4492N
9A, 100V, RDS(ON) 26m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Static
Max.
Unit
Test conditions
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1
-
-
-
±100
1
V
VDS=VGS, ID=250μA
VDS=0, VGS=20V
DS=80V, VGS=0
-
-
nA
-
V
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
ID(on)
μA
A
-
-
25
-
VDS=80V, VGS=0, TJ= 55°C
VDS=5V, VGS=10V
20
-
-
-
26
36
-
VGS=10V, ID=2A
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
VGS=4.5V, ID=2A
VDS=15V, ID=2A
IS=2A, VGS=0
Forward Transconductance 1
Diode Forward Voltage
gfs
-
40
S
V
VSD
-
0.7
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
-
-
-
12.5
-
-
-
ID=2A
VDS=15V
2.6
nC
nS
VGS=4.5V
4.6
Switching
Turn-On Delay Time
Rise Time
Td(on)
Tr
-
-
-
-
20
9
-
-
-
-
VDD=25
ID=1A
VGEN=10V
Turn-Off Delay Time
Td(off)
Tf
70
20
RL=25Ω
Fall Time
Notes:
1
2
Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Feb-2011 Rev. A
Page 2 of 2
相关型号：
SSG4502CE
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SECOS
SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
SECOS
SSG4520H
N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
SECOS
SSG4520H_12
N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
SECOS
©2020 ICPDF网 联系我们和版权申明