SSG4462N [SECOS]
N-Ch Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | SSG4462N |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总2页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4462N
9.7 A, 60 V, RDS(ON) 22 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
SOP-8
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
B
L
D
M
FEATURES
A
C
J
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
N
E
K
H
G
F
High performance trench technology.
Millimeter
Min. Max.
Millimeter
REF.
REF.
PACKAGE INFORMATION
Min.
Max.
A
B
C
D
E
F
5.80
4.80
3.80
0°
6.20
5.00
4.00
8°
H
J
K
L
M
N
0.35
0.49
0.375 REF.
Package
MPQ
LeaderSize
45°
1.35
0.10
1.75
0.25
0.40
0.19
0.90
0.25
SOP-8
2.5K
13’ inch
0.25 REF.
G
1.27 TYP.
S
S
S
G
D
D
D
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
Ratings
Unit
V
VDS
VGS
ID
60
±20
9.7
Gate-Source Voltage
V
TA = 25°C
Continuous Drain Current 1
A
TA = 70°C
ID
8.0
25
A
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
IDM
A
IS
2
A
TA = 25°C
Total Power Dissipation 1
PD
3.1
W
W
°C
TA = 70°C
PD
2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 ~ 150
THERMAL RESISTANCE RATINGS
t ≦ 10 sec
RθJA
40
80
°C / W
°C / W
Maximum Junction to Ambient a
Notes:
Steady State
1
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 1 of 2
SSG4462N
9.7 A, 60 V, RDS(ON) 22 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1
-
-
-
-
±100
1
V
VDS= VGS, ID= 250μA
VDS= 0V, VGS= 20V
DS= 60V, VGS= 0V
nA
μA
μA
A
-
-
V
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
ID(on)
-
-
10
-
VDS= 60V, VGS= 0V, TJ= 55°C
VDS= 5V, VGS= 10V
20
-
-
-
38
50
-
VGS= 10V, ID= 6.7A
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
VGS= 4.5V, ID= 5.9A
VDS= 15V, ID= 5.2A
IS= 2.0A, VGS= 0V
Forward Transconductance 1
Diode Forward Voltage
gfs
-
11
0.7
S
V
VSD
-
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
-
8.5
3.3
4.0
18
59
37
9
-
-
-
-
-
-
-
ID= 6.7A
VDS= 30V
nC
nS
VGS= 4.5V
VDD= 30V
ID= 1A
VGEN= 10V
RL= 30Ω
Turn-Off Delay Time
Fall Time
Td(off)
Tf
Notes:
1
2
Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 2 of 2
相关型号：
SSG4502CE
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SECOS
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