SSG4480N [SECOS]
N-Ch Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | SSG4480N |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：620K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4480N
7.1 A, 80 V, RDS(ON) 41 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOP-8
FEATURES
Low RDS(on) trench technology.
Low thermal impedance.
Fast switching speed.
B
L
D
APPLICATIONS
M
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
A
C
J
N
E
K
H
G
F
PACKAGE INFORMATION
Package
MPQ
LeaderSize
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
5.80
4.80
3.80
0°
0.40
0.19
6.20
5.00
4.00
8°
0.90
0.25
H
J
K
L
M
N
0.35
0.375 REF.
0.49
SOP-8
2.5K
13’ inch
45°
1.35
0.10
0.25 REF.
1.75
0.25
G
1.27 TYP.
S
D
D
D
D
S
S
G
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
80
Unit
V
Gate-Source Voltage
VGS
±20
7.1
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
A
Continuous Drain Current 1
6
A
Pulsed Drain Current 2
50
A
Continuous Source Current (Diode Conduction) 1
IS
3.8
A
PD @ TA = 25°C
PD @ TA = 70°C
TJ, TSTG
3.1
W
W
°C
Total Power Dissipation 1
2.2
Operating Junction & Storage Temperature Range
-55 ~ 150
Thermal Resistance Ratings
t≦10 sec
RθJA
40
80
°C / W
°C / W
Thermal Resistance Junction-ambient (Max.) 1
Notes
Steady State
1.
2.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Dec-2010 Rev. C
Page 1 of 4
SSG4480N
7.1 A, 80 V, RDS(ON) 41 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Static
Max.
Unit
Teat Conditions
Gate Threshold Voltage
VGS(th)
IGSS
1
-
-
-
±10
1
V
VDS= VGS, ID=-250μA
VDS= 0V, VGS= ±20V
VDS=64V, VGS=0V
Gate-Body Leakage Current
-
μA
-
-
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(on)
μA
A
-
-
10
-
VDS=64V, VGS=0V, TJ=55°C
20
-
-
-
VDS=5V, VGS=10V
VGS=10V, ID=5.4A
VGS=4.5V, ID=4.6A
VDS=15V, ID=5.4A
IS=2A, VGS=0V
41
57
-
Drain-Source On-Resistance1
RDS(ON)
mΩ
-
-
Forward Transconductance1
Diode Forward Voltage
gfs
-
20
S
V
VSD
-
0.76
-
Dynamic 2
19.5
4.5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ID=5.4A
VDS=40V
VGS=4.5V
nC
nS
pF
Qgd
Td(on)
Tr
10
12.8
24
VDD=40V
ID=5.4A
VGEN=10V
RL=7.5Ω
Turn-Off Delay Time
Fall Time
Td(off)
Tf
52.3
46
RGEN=6Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes
CISS
COSS
CRSS
1522
129
VDS=15V
GS=0V
V
f=1Mhz
87
1.
2.
Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Dec-2010 Rev. C
Page 2 of 4
SSG4480N
7.1 A, 80 V, RDS(ON) 41 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Dec-2010 Rev. C
Page 3 of 4
SSG4480N
7.1 A, 80 V, RDS(ON) 41 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Dec-2010 Rev. C
Page 4 of 4
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