SSG4470STM [SECOS]
N-Ch Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | SSG4470STM |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总5页 (文件大小：822K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4470STM
N-Ch Enhancement Mode Power MOSFET
10 A, 40 V, RDS(ON) 10 m
Elektronische Bauelemente
FEATURES
Super high dense cell design for low RDS(on).
Rugged and reliable.
SOP-8
Surface Mount Package.
B
PRODUCT SUMMARY
PRODUCT SUMMARY
RDS(on) m(Max
10@VGS= 10V
VDSS(V) d
40
ID(A)
10
L
D
M
13@VGS= 4.5V
A
C
J
N
E
K
MARKING
H
G
F
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
5.80
4.80
3.80
0°
0.40
0.19
6.20
5.00
4.00
8°
0.90
0.25
H
J
K
L
M
N
0.35
0.375 REF.
0.49
D
8
D
D
6
D
5
45°
7
1.35
0.10
0.25 REF.
1.75
0.25
STM4470
= Date Code
G
1.27 TYP.
1
2
3
4
S
S
S
G
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
SYMBOL
RATINGS
UNIT
V
d
VDS
40
±20
Gate-Source Voltage
VGS
ID
V
Continuous Drain Current a @TJ= 25°C
Pulsed Drain Current b
10
A
IDM
39
A
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction & Storage Temperature Range
IS
1.7
A
PD
2.5
W
°C
TJ, TSTG
-55 ~ 150
THERMAL RESISTANCE RATINGS
Thermal Resistance Junction-ambient a
RθJA
50
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Apr-2010 Rev. A
Page 1 of 5
SSG4470STM
N-Ch Enhancement Mode Power MOSFET
10 A, 40 V, RDS(ON) 10 m
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage d
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
40
-
-
-
-
-
1
V
VGS= 0V, ID= 250μA
μA
nA
VDS= 32V, VGS= 0V
VGS= ±20V, VDS= 0V
IGSS
-
±100
ON CHARACTERISTICS b
Gate Threshold Voltage
VGS(th)
1
-
1.7
8
3
10
13
-
V
VDS= VGS, ID= 250μA
VGS= 10V, ID= 10A
Drain-Source On-State Resistance
RDS(ON)
mΩ
-
11
-
VGS= 4.5V, ID= 6A
VDS= 10V, VGS= 10A
VDS= 10V, ID= 10A
On-State Drain Current
ID(ON)
gfs
20
-
A
S
Forward Transconductance
20
-
DYNAMIC CHARACTERISTICS C
Input Capacitance
CISS
COSS
CRSS
-
-
-
1020
240
-
-
-
Output Capacitance
pF
VDS= 20V, VGS= 0V, f= 1.0MHz
Reverse Transfer Capacitance
135
SWITCHING CHARACTERISTICS C
Turn-On Delay Time
Rise Time
Td(on)
Tr
-
-
-
-
-
-
-
-
15
22
-
-
-
-
-
-
-
-
VDD= 20V
ID= 1A
VGS= 10V
nS
nC
Turn-Off Delay Time
Fall Time
Td(off)
Tf
48
RGEN= 3.3Ω
12
19.5
9.8
2
VDS= 20V, ID= 10A, VGS= 10V
VDS= 20V, ID= 10A, VGS= 4.5V
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
VDS= 20V, ID= 10A, VGS= 10V
5.5
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
Notes
VSD 0.73 1.2
-
V
VGS= 0V, IS= 1.7A
a. Surface Mounted on FR4 Board, t ≦ 10 sec.
b. Pulse Test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2％.
c. Guaranteed by design, not subject to production testing.
d. Guaranteed when external Rg= 3.3Ω and tf ＜ tf max.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Apr-2010 Rev. A
Page 2 of 5
SSG4470STM
N-Ch Enhancement Mode Power MOSFET
10 A, 40 V, RDS(ON) 10 m
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Apr-2010 Rev. A
Page 3 of 5
SSG4470STM
N-Ch Enhancement Mode Power MOSFET
10 A, 40 V, RDS(ON) 10 m
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Apr-2010 Rev. A
Page 4 of 5
SSG4470STM
N-Ch Enhancement Mode Power MOSFET
10 A, 40 V, RDS(ON) 10 m
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Apr-2010 Rev. A
Page 5 of 5
相关型号：
SSG4502CE
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SECOS
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