2SD2600 [SANYO]

NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications; NPN型三重扩散平面硅达林顿晶体管驱动器的应用
2SD2600
型号: 2SD2600
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications
NPN型三重扩散平面硅达林顿晶体管驱动器的应用

晶体 驱动器 晶体管 达林顿晶体管
文件: 总3页 (文件大小:37K)
中文:  中文翻译
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Ordering number : EN8564  
SANYO Sem iconductors  
DATA S HEET  
NPN Triple Diffused Planar Silicon Darlington Transistor  
2SD2600  
Driver Applications  
Applications  
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.  
Features  
High DC current gain.  
Large current capacity and wide ASO.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
110  
100  
6
V
V
I
8
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
12  
35  
150  
A
CP  
P
Tc=25°C  
W
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
0.1  
I
V
V
V
V
=80V, I =0A  
mA  
mA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
I
=5V, I =0A  
3.0  
EBO  
C
DC Current Gain  
h
FE  
=3V, I =4A  
1500  
4000  
20  
C
Gain-Bandwidth Product  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Turn-ON Time  
f
T
=5V, I =4A  
MHz  
V
C
V
CE  
V
BE  
(sat)  
I
C
I
C
I
C
I
C
=4A, I =8mA  
0.9  
1.5  
2.0  
B
(sat)  
=4A, I =8mA  
V
B
V
V
=5mA, I =0A  
110  
100  
V
(BR)CBO  
(BR)CEO  
E
=50mA, R =∞  
BE  
V
t
See specified test circuit.  
See specified test circuit.  
See specified test circuit.  
0.6  
4.8  
1.6  
µs  
µs  
µs  
on  
Storage Time  
t
stg  
Fall Time  
t
f
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
73106IA MS IM TA-1084  
No.8564-1/3  
2SD2600  
Package Dimensions  
unit : mm (typ)  
Switching Time Test Circuit  
7002-003  
OUTPUT  
PW=50µs  
DC1%  
8.2  
7.8  
6.2  
I
B2  
TUT  
0.6  
I
B1  
3
INPUT  
R
12.5Ω  
L
R
B
50Ω  
V
R
1
2
0.3  
0.6  
1.0  
2.54  
1.0  
2.54  
+
+
100µF  
470µF  
5.08  
1 : Base  
2 : Emitter  
3 : Collector  
7.8  
10.0  
6.0  
V
= --5V  
V
=50V  
CC  
BE  
500I = --500I =I =4A  
B1  
B2 C  
SANYO : ZP  
Electrical Connection  
C
B
6k200Ω  
E
I
-- V  
CE  
I
-- V  
CE  
C
C
10  
8
8
6
4
2
From top  
2000µA  
1800µA  
1600µA  
1400µA  
1200µA  
From top  
20mA  
18mA  
16mA  
14mA  
12mA  
10mA  
8mA  
6
6mA  
4
µA  
400  
2
0
200µA  
I =0µA  
I =0mA  
B
B
0
2
0
1
2
3
4
5
0
1
2
3
4
5
Collector-to-Emitter Voltage, V  
CE  
-- V IT03402  
Collector-to-Emitter Voltage, V  
-- V IT03403  
CE  
I
-- V  
h
-- I  
C
BE  
FE C  
8
6
4
V
=3V  
V
=3V  
CE  
CE  
10000  
7
5
3
2
1000  
7
5
3
2
2
0
100  
7
5
2
3
5
7
2
3
5
7
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
IT03404  
0.1  
1.0  
10  
Base-to-Emitter Voltage, V  
BE  
-- V  
IT03405  
Collector Current, I -- A  
C
No.8564-2/3  
2SD2600  
V
(sat) -- I  
V
(sat) -- I  
BE  
CE  
C
C
10  
10  
I
/ I =500  
B
I
/ I =500  
B
C
C
7
7
5
5
3
2
3
2
1.0  
C
25°  
7
5
1.0  
7
5
3
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.1  
1.0  
10  
IT03406  
0.1  
1.0  
10  
IT03407  
Collector Current, I -- A  
Collector Current, I -- A  
C
C
A S O  
P
-- Tc  
C
50  
40  
30  
20  
2
I
=12A  
CP  
Tc=25°C  
10  
I =8A  
C
5
3
2
1.0  
5
3
2
0.1  
10  
0
5
3
2
1ms to 100ms : Single pulse  
2
3
5
7
2
3
5
7
2
0
20  
40  
60  
80  
100  
120  
140  
160  
10  
100  
Collector-to-Emitter Voltage, V  
-- V IT03408  
Case Temperature, Tc -- °C  
IT03409  
CE  
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state,  
and are not guarantees of the performance, characteristics, and functions of the described products  
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be  
evaluated in an independent device, the customer should always evaluate and test devices mounted  
in the customer's products or equipment.  
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any  
and all semiconductor products fail with some probability. It is possible that these probabilistic failures  
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or  
fire, or that could cause damage to other property. When designing equipment, adopt safety measures  
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO Semiconductor products (including technical data,services) described  
or contained herein are controlled under any of applicable local export control laws and regulations, such  
products must not be exported without obtaining the export license from the authorities concerned in  
accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic  
or mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO Semiconductor product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not  
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate  
and reliable, but no guarantees are made or implied regarding its use or any infringements of  
intellectual property rights or other rights of third parties.  
This catalog provides information as of July, 2006. Specifications and information herein are subject  
to change without notice.  
PS No.8564-3/3  

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