2SD2614 [ETC]
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 5A I(C) | TO-220FN ; 晶体管| BJT |达林顿| NPN | 70V V（ BR ） CEO | 5A I（C ） | TO- 220FN\n
| 型号： | 2SD2614 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 5A I(C) | TO-220FN
|
| 文件： | 总1页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2614
Transistors
Medium Power Transistor
(Motor, Relay drive)
(60 10V, 5A)
2SD2614
!Features
!External dimensions (Units : mm)
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to
"L" loads.
10.0
4.5
2.8
3.2
φ
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
1.2
1.3
0.8
0.75
( )
(1) Base Gate
2.54
2.54
)
2.6
(
) (
) (
)
1
2
(
(
3
(
)
)
(2) Collector Drain
!Absolute maximum ratings (Ta = 25°C)
(
)
)
(
1
2
3
(3) Emitter Source
Parameter
Collector-base voltage
Collector-emitter voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
60±10
60±10
V
ROHM : TO-220FN
V
Emitter-base voltage
6
V
A (DC)
A (Pulse)
W
5
Collector current
I
C
10
*
2
25
Collector power dissipation
PC
W (Tc = 25°C)
°C
Tj
150
Junction temperature
Storage temperature
Tstg
−55~+150
°C
Single pulse Pw = 10ms
*
!Packaging specifications and hFE
Type
2SD2614
TO-220FN
2k~30k
-
Package
hFE
Code
500
Basic ordering unit (pieces)
!Circuit diagram
C
B
R1
R2
E
E
B
: Emitter
: Base
R
R
1
2
3.5kΩ
300Ω
C : Collector
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
BVCBO
BVCEO
50
50
-
-
70
70
V
V
I
I
C
C
= 50µA
= 5mA
CB = 40V
EB = 5V
I
CBO
EBO
CE(sat)
FE
-
-
10
µA
mA
V
V
V
I
-
-
3
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
V
-
2000
-
-
1.5
30000
-
I
C
/I
CE/I
CB = 10V , IE
B
= 2A/2mA
= 3V/2A
= 0A , f = 1MHz
*
*
h
-
-
V
V
C
Output capacitance
Cob
75
pF
Measured using pulse current.
*
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