2SD2618 [ETC]
;
| 型号： | 2SD2618 |
| 厂家： | 
ETC |
| 描述： | 晶体 晶体管 局域网 |
| 文件： | 总1页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2618
Transistors
Power Transistor (80V, 4A)
2SD2618
!Features
!Circuit diagram
FE
1) Darlington connection for a high h .
2) Built-in resistor between base and emitter.
3) Built-in damper doide.
C
4) Complements the 2SB1676.
B
R 300Ω
B : Base
R
C : Collector
E : Emitter
E
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
80
80
V
V
7
V
I
C
4
A (DC)
Collector current
I
CP
6
A (t = 100ms)
2
30
W
Collector power dissipation
PC
W (Tc = 25°C)
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55~+150
!Packaging specifications and hFE
Type
2SD2618
TO-220FN
1k~10k
-
Package
hFE
Code
500
Basic ordering unit (pieces)
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
BVCBO
BVCEO
80
80
-
-
-
V
V
I
I
C
C
= 50µA
= −1mA
-
100
10
I
CBO
-
-
µA
µA
V
V
CB = 80V
Emitter cutoff current
I
EBO
-
-
V
EB = 5V
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
CE(sat)
-
-
1.5
10000
-
I
C
/I
B
= 2A/4mA
= 3V/2A
CE = 5V , I = −0.2A , f = 10MHz
CB = 10V , I = 0A , f = 1MHz
1
*
1
*
2
*
hFE
1000
-
-
V
V
V
CE/IC
f
T
-
-
40
35
MHz
pF
E
Output capacitance
Cob
-
E
1 Measured using pulse current.
*
2 Transition frequency of the device.
*
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