2SD2605Q [PANASONIC]

Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN;
2SD2605Q
型号: 2SD2605Q
厂家: PANASONIC    PANASONIC
描述:

Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN

放大器 晶体管
文件: 总3页 (文件大小:158K)
中文:  中文翻译
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Power Transistors  
2SD2605  
Silicon NPN triple diffusion planar type  
For power amplification  
Unit: mm  
Features  
High collector to emitter VCEO  
5.0±0.1  
0±0.2  
1.0  
Allowing supply with the radial taping  
90°  
Absolute Maximum Ratings (T =25˚C)  
C
1.2±0.1  
C1.0  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
2.25±0.2  
0.65±01  
1.05±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
20  
35±0.1  
150  
V
0.55±0.1  
0.55±0.1  
V
3
1.0  
1
2 3  
2
20  
A
Collector power TC=25C  
P
W
2.5±0.2  
2.5±0.2  
dissipation  
Ta=25°C  
2.0  
1:Base  
2:Collector  
3:Emitter  
MT4 Type Package  
Junction temperature  
Storage temperate  
50  
˚C  
˚C  
Tstg  
–55 to +150  
Eectral Characteristics (
ameter  
Smbol  
IO  
Conditions  
min  
typ  
max  
50  
Unit  
µA  
µA  
V
Coector cutoff current  
mitter cutoff current  
VCB = 200V, IE = 0  
IEBO  
VEB = 4, IC = 0  
50  
Cllector base votage  
Colr voltge  
Emige  
VCBO  
VCEO  
VEBO  
IC = 50µA, IE = 0  
200  
150  
IC = 5mA, IB = 0  
V
IE = 500µA, IC = 0  
V
*
hFE1  
VCE = 10V, IC = 150mA  
VCE = 10V, IC = 400mA  
VCE = 10V, IC = 400mA  
IC = 500mA, IB = 50mA  
VCE = 10V, IC = 0.5A, f = 1MHz  
60  
50  
240  
Forward ctransfer ratio  
Base to emitter voltage  
hFE2  
VBE  
1
1
V
V
Collector to emitter saturation voltage VCE(sat)  
Transition frequency  
fT  
20  
MHz  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
60 to 140  
100 to 240  
1
Power Transistors  
2SD2605  
IC — VCE  
IC — VBE  
VCE(sat) — IC  
1.0  
2.0  
1.5  
1.0  
0.5  
0
10  
VCE=10V  
TC=25˚C  
IC/IB=10  
TC=25˚C  
TC=25˚C  
0.8  
IB=7mA  
6mA  
5mA  
1
0.6  
0.4  
0.2  
0
4mA  
3mA  
10–1  
2mA  
1mA  
10–2  
10–2  
0
2
4
6
8
10  
12  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
10–1  
1
10  
(
V
)
(
V
)
( )  
Collector current IC A  
Collector to emitter voltage VCE  
Base to emitter voltage VBE  
hFE — IC  
104  
VCE=10V  
TC=25˚C  
103  
102  
10  
1
10–2  
10–1  
1
10  
(
A
)
Collector current IC  
2
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  

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