2SD2607 [ROHM]
For Power amplification (100V, 8A); 对于功率放大（ 100V ， 8A ）
| 型号： | 2SD2607 |
| 厂家： | 
ROHM |
| 描述： | For Power amplification (100V, 8A) |
| 文件： | 总1页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2607
Transistors
Power Transistor (100V, 8A)
2SD2607
!External dimensions (Units: mm)
!Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
10.0
4.5
2.8
3.2
φ
4) Complements the 2SB1668.
1.2
1.3
0.8
0.75
2.54
2.54
)
2.6
!Absolute maximum ratings (Ta = 25°C)
(
) (
)
(
2
3
1
(
)
(1) Base Gate
(
) ( )
( )
2
3
1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
(
)
)
(2) Collector Drain
(3) Emitter Source
VCBO
VCEO
VEBO
100
100
V
(
ROHM : TO-220FN
V
7
V
A (DC)
A (Pulse)
W
8
I
C
Collector current
Power dissipation
10
*
2
30
P
C
W (Tc = 25°C)
°C
Tj
150
Junction temperature
Storage temperature
Tstg
−55~+150
°C
Single pulse, Pw = 10ms
*
!Packaging specifications and hFE
Type
2SD2607
TO-220FN
1k~20k
-
Package
hFE
Code
Basic ordering unit (pieces)
500
!Circuit diagram
C
B
R1
R2
E
B : Base
C : Collector
E : Emitter
R1 5kΩ
R2 300kΩ
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
BVCBO
BVCEO
100
100
-
-
-
-
V
V
I
I
C
C
= 50µA
= 5mA
I
CBO
EBO
CE(sat)
FE
-
-
10
µA
mA
V
V
CB = 100V
EB = 5V
Emitter cutoff current
I
-
-
3
V
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
-
-
1.5
I
C
/I
CE/I
CE = 5V , I
CB = 10V , I
B
= 3A/6mA
= 3V/2A
= −0.2A , f = 10MHz
= 0A , f = 1MHz
1
1
2
*
*
*
h
1000
-
20000
-
V
V
V
C
f
T
-
-
40
50
-
-
MHz
pF
E
Output capacitance
Cob
E
1 Measured using pulse current.
2 Transition frequency of the device.
*
*
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