2SD2611D [ROHM]
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN;
| 型号： | 2SD2611D |
| 厂家： | 
ROHM |
| 描述： | Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN |
| 文件： | 总1页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2611
Transistors
Power Transistor (80V, 7A)
2SD2611
!Features
CE(sat)
C
B
1) Low saturation voltage, typically V
= 0.3V at I / I =4 / 0.4A.
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C)
4) Wide SOA (safe operating area).
5) Complements the 2SB1672.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
V
100
V
80
5
V
A(DC)
A(Pulse)
W
7
I
C
Collector current
10
*
2
30
Collector power dissipation
P
C
W(Tc=25°C)
°C
Junction temperature
Storage temperature
Tj
150
Tstg
−55 ∼ +150
°C
Single pulse, Pw=100ms
*
!Packaging specifications and hFE
Type
2SD2611
TO-220FN
DEF
Package
hFE
Code
−
500
Basic ordering unit (pieces)
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
100
80
5
−
−
−
−
−
−
−
−
5
−
−
−
10
10
1
V
V
I
I
I
C
C
E
=
50µA
= 1mA
50µA
CB = 100V
EB = 4
V
=
I
CBO
−
−
−
−
60
−
µA
µA
V
V
V
Emitter cutoff current
I
EBO
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
V
CE(sat)
I
I
C
/I
/I
B
= 4A/0.4A
= 4A/0.4A
∗
∗
VBE(sat)
V
C
B
1.5
320
−
hFE
−
MHz
pF
V
V
V
CE= 5V , I
CE = 5V , I
10V , I
C
=
=
1A
−0.5A , f
0A , f
∗
Transition frequency
f
T
E
= 5MHz
1MHz
∗
Output capacitance
Cob
−
150
−
CB
=
E
=
=
Measured using pulse current
∗
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