2SD2605 [ETC]
;
| 型号： | 2SD2605 |
| 厂家： | 
ETC |
| 描述： | 晶体 晶体管 放大器 |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2605
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
Features
High collector to emitter VCEO
■
5.0±0.1
●
10.0±0.2
1.0
●
Allowing supply with the radial taping
90°
Absolute Maximum Ratings (T =25˚C)
■
C
1.2±0.1
C1.0
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
2.25±0.2
0.65±0.1
1.05±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
200
0.35±0.1
150
V
0.55±0.1
0.55±0.1
6
V
3
A
C1.0
1
2 3
IC
2
20
A
Collector power TC=25°C
PC
W
2.5±0.2
2.5±0.2
dissipation
Ta=25°C
2.0
1:Base
2:Collector
3:Emitter
MT4 Type Package
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
50
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 200V, IE = 0
IEBO
VEB = 4V, IC = 0
50
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
IC = 50µA, IE = 0
200
150
6
IC = 5mA, IB = 0
V
IE = 500µA, IC = 0
V
*
hFE1
VCE = 10V, IC = 150mA
VCE = 10V, IC = 400mA
VCE = 10V, IC = 400mA
IC = 500mA, IB = 50mA
VCE = 10V, IC = 0.5A, f = 1MHz
60
50
240
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
1
1
V
V
Collector to emitter saturation voltage VCE(sat)
Transition frequency
fT
20
MHz
*hFE1 Rank classification
Rank
hFE1
Q
P
60 to 140
100 to 240
1
Power Transistors
2SD2605
IC — VCE
IC — VBE
VCE(sat) — IC
1.0
2.0
1.5
1.0
0.5
0
10
VCE=10V
TC=25˚C
IC/IB=10
TC=25˚C
TC=25˚C
0.8
IB=7mA
6mA
5mA
1
0.6
0.4
0.2
0
4mA
3mA
10–1
2mA
1mA
10–2
10–2
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
10–1
1
10
(
V
)
(
V
)
( )
Collector current IC A
Collector to emitter voltage VCE
Base to emitter voltage VBE
hFE — IC
104
VCE=10V
TC=25˚C
103
102
10
1
10–2
10–1
1
10
(
A
)
Collector current IC
2
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