2SD2604_06 [TOSHIBA]
Silicon NPN Triple Diffused Type (Darlington); 硅NPN三重扩散型（达林顿）
| 型号： | 2SD2604_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon NPN Triple Diffused Type (Darlington) |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2604
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2604
High-Power Switching Applications
Unit: mm
Hammer Drive, Pulse Motor Drive Applications
•
•
High DC current gain: h
= 2000 (min)
FE
Low saturation voltage: V
= 1.5 V (max)
CE (sat)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
95
V
V
V
Collector-emitter voltage
Emitter-base voltage
110 ± 15
5
DC
I
5
10
C
Collector current
Base current
A
A
Pulse
I
CP
I
0.7
B
Ta = 25°C
Tc = 25°C
2.0
Collector power
dissipation
JEDEC
JEITA
―
P
W
C
20
SC-67
2-10R1A
Junction temperature
T
150
°C
°C
j
TOSHIBA
Storage temperature range
T
−55 to 150
stg
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ ≈ 150 Ω
Emitter
1
2006-11-21
2SD2604
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
= 90 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
V
V
―
0.75
95
―
―
100
3.0
μA
μA
V
CBO
CB
EB
E
Emitter cut-off current
I
= 6 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= 10 mA, I = 0
110
―
125
15000
―
C
B
h
h
V
V
= 3 V, I = 2 A
2000
1000
―
FE (1)
FE (2)
CE
CE
C
DC current gain
= 3 V, I = 5 A
―
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
I
I
= 2 A, I = 4 mA
0.9
1.5
1.5
V
V
CE (sat)
BE (sat)
C
C
B
V
= 2 A, I = 4 mA
―
2.5
B
Output
Turn-on time
t
―
―
―
0.5
5.0
0.7
―
―
―
on
I
I
B1
B2
Input
20 μs
Switching time
μs
Storage time
Fall time
t
stg
V
≈ 40 V
CC
t
f
I
= −I = 4 mA, duty cycle ≤ 1%
B2
B1
Marking
D2604
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21
2SD2604
V
– I
h
– I
FE C
CE
C
10
8
10000
Common emitter
Tc = 25°C
25
Tc = 100°C
0.8
1.0
1.2
1.6 1.4
1.8
−55
6
2.0
0.6
0.4
1000
4
2
I
= 0.2 mA
B
0
0
2
4
6
8
10
100
50
Collector-emitter voltage
V
(V)
CE
Common emitter
V
= 3 V
CE
0.1
1
10
Collector current
I
C
(A)
I
– V
I – V
C BE (sat)
C
CE (sat)
10
10
Common emitter
/I = 500
Common emitter
I /I = 500
C B
I
C B
−55
25
−55
1
1
Tc = 100°C
25
Tc = 100°C
0.1
0.1
0.1
0.1
1
10
1
10
Collector current
I
C
(A)
Collector current
I
C
(A)
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2006-11-21
2SD2604
I
– V
Safe Operating Area
C
BE
5
4
3
2
1
0
30
10
Common emitter
= 3 V
I
max
C
V
CE
100 ms* 10 ms* 100 μs*
(pulsed)*
20 μs*
I
max
C
(continuous)
3
1
1 ms*
DC operation
Tc = 25°C
Tc = 100°C
25
−55
0.3
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
Base-emitter voltage
V
(V)
BE
*: Single nonrepetitive pulse
Tc = 25°C
0.03
0.01
V
CEO
max
Curves must be derated linearly
with increase in temperature.
1
3
10
30
100
300
Collector-emitter voltage
V
(V)
CE
4
2006-11-21
2SD2604
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2006-11-21
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