BU9897GUL-W [ROHM]
Silicon Monolithic Integrated Circuit; 硅单片集成电路
| 型号： | BU9897GUL-W |
| 厂家： | 
ROHM |
| 描述： | Silicon Monolithic Integrated Circuit |
| 文件： | 总5页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1/4
◇ STRUCTURE
◇ PRODUCT
Silicon Monolithic Integrated Circuit
I2C BUS 128Kbit (16,384×8bit) EEPROM
◇ PART NUMBER
BU9897GUL-W
PART NUMBER
BU9897GUL-W
PACKAGE
VCSP50L2
◇FEATURES
Two wire serial interface
Wide operating voltage range (1.7V～5.5V)
Endurance : 1,000,000 erase/write cycles
◇ ABSOLUTE MAXIMUM RATING (Ta=25℃)
Parameter
Supply Voltage
Symbol
Vcc
Pd
Rating
-0.3～6.5
Unit
V
Power Dissipation
Storage Temperature
Operating Temperature
Terminal Voltage
220
*1
*2
mW
℃
℃
V
Tstg
Topr
－
-65～125
-40～85
-0.3～Vcc+1.0
*1 2.2mW/℃(*1) for operation above 25℃
*2 The Max value of Terminal Voltage is not over 6.5V
◇ RECOMMENDED OPERATING CONDITION
Parameter
Supply Voltage
Input Voltage
Symbol
Vcc
Rating
1.7～5.5
0～Vcc
Unit
V
VIN
V
REV. B
2/4
◇MEMORY CELL CHARACTERISTICS (Ta=25℃, Vcc=1.7～5.5V)
Specification
Parameter
Unit
Min.
1,000,000
40
Typ.
-
Max.
-
Write/Erase Cycle
Data Retention
*1
*1
Cycles
-
-
Years
○Initial Data FFh in all address.
*1 Not 100% TESTED
◇DC OPERATING CHARACTERISTICS
◇AC OPERATING CHARACTERISTICS
Specification
(Unless otherwise specified Ta=-40～85℃, Vcc=1.7～5.5V)
Specification
Parameter
Symbol
Unit
Specification
Min.
Min.
Min.
Parameter
Symbol
Unit
Min.
－
Typ.
Max.
400
－
"H" Input Voltage1
"L" Input Voltage1
"L" Output Voltage1
"L" Output Voltage2
VIH1
VIH2
VOL1
VOL2
ILI
0.7Vcc
－
Vcc+1.0
V
V
Clock Frequency
fSCL
tHIGH
tLOW
tR
－
kHz
μs
Μs
Μs
Μs
-0.3
－
－
-1
－
－
－
－
－
0.3Vcc
Data Clock High
Period
IOL=3.0mA，2.5V≦Vcc≦
5.5V（SDA）
IOL=0.7mA，1.7V≦Vcc＜
2.5V（SDA）
0.6
1.2
－
－
0.4
0.2
1
V
V
Data Clock Low
－
－
Period
SDA and SCL
Rise Time *1
SDA and SCL
Fall Time *1
－
0.3
0.3
Input Leakage
Current
Output Leakage
Current
μA
VIN=0V～Vcc
tF
－
－
ILO
-1
1
μA VOUT=0V～Vcc（SDA）
Vcc=5.5V,fSCL=400ｋHz，
Start Condition
Hold Time
tHD:STA
0.6
－
－
Μs
ICC1
－
－
2.5
mA
tWR=5ms
Start Condition
Setup Time
Input Data Hold
Time
Byte Write,Page Write
Vcc=5.5V,fSCL=400ｋHz
Random Read,Current
Read,Sequential Read
tSU:STA
tHD:DAT
0.6
0
－
－
－
－
μs
Operating Current
Standby Current
ICC2
ISB
－
－
－
－
0.5
2.0
ｍA
μA
ns
Input Data Setup
Time
Vcc=5.5V,SDA,SCL=Vcc
A0,A1,A2=GND,WP=GND
tSU:DAT
100
－
－
ns
Output Data
Delay Time
Output Data Hold
Time
Stop Condition
Setup Time
tPD
tDH
0.1
0.1
0.6
1.2
－
－
－
－
－
－
0.9
－
－
－
5
μs
μs
μs
μs
ns
tSU:STO
tBUF
Bus Free Time
Write Cycle Time
tWR
Noise Spike
Width (SDA and
SCL)
tI
－
－
0.1
μs
WP Hold Time
WP Setup Time
WP High Period
tHD:WP
tSU:WP
0
－
－
－
－
－
－
ns
0.1
1.0
μs
μs
tHIGH:WP
*1 Not 100% TESTED
◇PIN No. NAME
◇BLOCK DIAGRAM
PIN No.
A1
PIN NAME
SCL
WP
A2
A0 B3
128Kbit EEPROM ARRAY
SLAVE, WORD
A3 Vcc
A2 WP
A1 SCL
B1 SDA
A3
Vcc
GND
SDA
A0
14bit
8bit
A4
ADDRESS
DATA
REGISTER
B1
A1 C3
14bit
DECODER
ADDRESS REGISTER
B3
B4
GND
GND
A2
C1
START
STOP
C2
A2 C2
CONTROL LOGIC
C3
A1
ACK
C4
GND
GND C1
HIGH VOLTAGE GEN.
VCC LEVEL DETECT
Fig.-1 BLOCK DIAGRAM
REV. B
3/4
◇NOTES FOR POWER SUPPLY
Vcc rises through the low voltage region in which internal circuit of IC and the controller are unstable, so that device may not work
properly due to an incomplete reset of internal circuit. To prevent this, the device has the feature of P.O.R. and LVCC. In the case of
power up, keep the following conditions to ensure functions of P.O.R. and LVCC.
1. It is necessary to be "SDA='H'" and "SCL='L' or 'H'".
2. Follow the recommended conditions of tR, tOFF, Vbot for the function of P.O.R. during power up.
◇RECOMMENDED CONDITIONS OF tR, tOFF, Vbot
tR
Vcc
tOFF
Fig.-2 Vcc RISING WAVEFORM
Vbot
0
3. Prevent SDA and SCL from being "High-Z".
In case that condition 1. and/or 2. cannot be met,
take following actions.
Vcc
tLOW
SCL
A） Unable to keep condition 1.
( SDA is "LOW" during power up.)
→Control SDA ,SCL to be "HIGH" as Fig.-3(a),
3(b).
B）Unable to keep condition 2.
SDA
After Vcc becomes stable
After Vcc becomes stable
tDH tSU:DAT
Fig.-3（a） SCL='H' and SDA='L'
tSU:DAT
Fig.-3（b） SCL='L' and SDA='L'
→After power becomes stable, execute
C）Unable to keep both conditions 1 and 2.
→Follow the instruction A first, then the instruction B.
◇CAUTIONS ON USE
(1) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, LSI may
be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding
the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding
the absolute maximum ratings should not be impressed to LSI.
(2) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is not lower than that of
GND terminal.
(3) Thermal design
In consideration of permissible loss in actual use condition, carry out heat design with sufficient margin.
(4) Terminal to terminal shortcircuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct
LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND owing to
foreign matter, LSI may be destructed.
(5) Use in a strong electromagnetic field may cause malfunction, therefore, evaluated design sufficiently.
REV. B
4/4
9897
Lot No.
GND
A2 A1
A0
GND
SDA
SCL
GND
GND
WP Vcc
The A4, B4, C4 pins are set to GND inside chip.
Please set these OPEN. Please don’t connect these GND.
Fig.-1 PHYSICAL DIMENSION (UNIT:mm)
REV. B
Notice
N o t e s
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