BU999 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
BU999
型号: BU999
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:94K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BU999  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 140V(Min)  
·High Switching Speed  
·High Power Dissipation  
APPLICATIONS  
·Designed for switching and linear applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
160  
140  
6
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Pulse  
Base Current-Continuous  
25  
A
ICP  
40  
A
IB  
10  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
106  
200  
-55~200  
W
TJ  
Junction Temperature  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
2.08  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BU999  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base -Emitter On Voltage  
Collector Cutoff Current  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
VCEO(SUS)  
IC= 50mA; IB= 0  
140  
IC= 10A; IB= 1A  
0.8  
1.5  
1.8  
2.5  
1.8  
10  
V
VCE  
VCE  
VBE  
VBE  
(sat)-1  
(sat)-2  
(sat)-1  
(sat)-2  
IC= 25A; IB= 2.5A  
IC= 10A; IB= 1A  
V
V
IC= 25A; IB= 2.5A  
IC= 10A; VCE= 2V  
VCE= 140V; VBE= -1.5V  
VCB= 160V; IE= 0  
VCE= 70V; IB= 0  
VEB= 6V; IC= 0  
V
V
VBE  
(on)  
ICEX  
μA  
μA  
μA  
μA  
ICBO  
ICEO  
IEBO  
Collector Cutoff Current  
100  
50  
Collector Cutoff Current  
Emitter Cutoff Current  
100  
hFE-1  
hFE-2  
hFE-3  
DC Current Gain  
IC= 0.5A; VCE= 2V  
IC= 10A; VCE= 2V  
IC= 25A; VCE= 2V  
35  
25  
12  
DC Current Gain  
100  
DC Current Gain  
Switching times  
Turn-on Time  
0.3  
1.5  
μs  
μs  
μs  
ton  
tstg  
tf  
IC= 10A, IB1= -IB2= 1A,  
VCC= 80V  
Storage Time  
Fall Time  
0.25  
2
isc Websitewww.iscsemi.cn  

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