HAT1041T [RENESAS]
Silicon P Channel Power MOS FET High Speed Power Switching; 硅P沟道功率MOS FET高速电源开关
| 型号： | HAT1041T |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 文件： | 总8页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank yyour understanding. Except for our corporate trademark, logo and
corporate statement, no tsoever have been made to the contents of the document, and
these changes do ntion to the contents of the document itself.
RePage: http://www.renesas.com
Renesas Technology Corp.
ustomer Support Dept.
1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intelleal property rights, or any other rights, belonging to Renesas Technology
Corporation or a third
2. Renesas Technoloassumes no responsibility for any damage, or infringement of any
third-party's riguse of any product data, diagrams, charts, programs, algorithms, or
circuit applin these materials.
3. All informats, including product data, diagrams, charts, programs and
algorithms reprat the time of publication of these materials, and are
subject to change ation without notice due to product improvements or
other reasons. It is stomers contact Renesas Technology Corporation
or an authorized Renesauct distributor for the latest product information
before purchasing a produc
The information described herracies or typographical errors.
Renesas Technology Corporation any damage, liability, or other loss
rising from these inaccuracies or err
Please also pay attention to information logy Corporation by various
means, including the Renesas Technology me page
(http://www.renesas.com).
4. When using any or all of the information containproduct data, diagrams,
charts, programs, and algorithms, please be sure to al system before
making a final decision on the applicability of the infos Technology
Corporation assumes no responsibility for any damage, liom the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designor use in a device
or system that is used under circumstances in which human life is pke. Please contact
Renesas Technology Corporation or an authorized Renesas Technologation product distributor
when considering the use of a product contained herein for any specific poses, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HAT1041T
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-1238F (Z)
7th. Edition
Jan. 2001
Features
•
•
•
•
Low on-resist
Capable of
Low drive cur
High density mou
Outline
TSSOP-
1
5
8
D
D
D
4
G
1, 5, 8
2, 3, 6, 7 S
Gat
4
S
2
S
3
S
6
S
7
HAT1041T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
-20
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
±12
V
-6.0
A
Note1
Drain peak current
ID(pulse)
-48
A
Body-drain diode reverse drain current IDR
-6.0
A
Channel dissipation
Pch Note2
1.3
W
°C
°C
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µ%
2. When board (FR4 40 x 40 x 1.6 mm), PW≤10s
Electrical Char
Item
Max
Unit
Test Conditions
Drain to source breakdown
voltage
—
V
ID = -10mA, VGS = 0
Gate to source leak current
IGSS
-
—
—
6.5
—
—
—
—
—
—
—
—
µA
µA
VGS = ±12V, VDS = 0
VDS = -20 V, VGS = 0
VDS = -10V, I D = -1mA
ID =- 3A, VGS =- 4.5VNote3
= -3A, VGS = -2.5VNote3
-3A, VDS = -10VNote3
0V
Zero gate voltege drain current IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state RDS(on)
11
resistance
RDS(on)
|yfs|
Forward transfer admittance
Input capacitance
Output capacitance
Ciss
Coss
1850
590
380
30
ns
ns
ns
V
Reverse transfer capacitance Crss
—
MHz
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
—
GS =- 4V, ID = -3A
VDD -10V
145
210
170
-0.85
—
Turn-off delay time
Fall time
—
—
Body–drain diode forward
voltage
VDF
-1.10
IF =-6.0A, VGS = 0Note3
Body–drain diode reverse
recovery time
trr
—
70
—
ns
IF = -6.0A, VGS = 0
diF/ dt =20A/µs
Note: 3. Pulse test
HAT1041T
Main Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
= -10 V
-20
-16
-12
-8
-20
-16
-12
-8
Pulse Test
-2V
V
DS
Pulse Test
-10 V
-4 V
-3 V
= -1.5 V
Tc = -25°C
25°C
75°C
-4
-4
0
0
-1
Gate to Source Voltage
-2
-3
-4
GS
-5
-10
V
(V)
Drain
Static Drain to Source on Sta
vs. Drain Current
Drain to Source on State Resistance
vs. Temperature
0.2
est
Pulse Test
0.1
0.04
0.02
0.05
-2.5 V
-5 A
0.02
0.01
V
= -4.5 V
GS
-2 A, -1 A
-5 A
0.005
-2 A, -1 A
V
= -4V
GS
0
0.002
-40
0
40
80
120
160
-0.2
-0.5 -1
-2
-5 -10 -20
(A)
Case Temperature Tc (°C)
Drain Current
I
D
HAT1041T
Normalized Transient Thermal Impedance vs. Pulse Width
10
D = 1
0.5
1
0.1
0.1
θ
θ
γ
• θ
ch - f(t) = s (t) ch - f
ch - f = 139 °C/W, Ta = 25 °C
0.01
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PW
T
P
DM
D =
0.001
PW
T
0.0001
m
1
10
100
1000
10000
10 µ
th PW (s)
HAT1041T
Package Dimensions
As of January, 2001
Unit: mm
3.00
3.30 Max
8
5
1
4
65
1.0
+0.08
–0.
*0.22
M
0.20 ± 0
6.40 ± 0.20
0° – 8°
0.50 ± 0.10
tachi Code
EC
TTP-8D
—
—
—
*Dimension including the plating thickn
Base material dimension
rence value)
HAT1041T
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such aspace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipical equipment for life support.
4. Design your approduct is used within the ranges guaranteed by Hitachi particularly
for maximum oltage range, heat radiation characteristics, installation
conditions hi bears no responsibility for failure or damage when used
beyond the gue guaranteed ranges, consider normally foreseeable
failure rates or faivices and employ systemic measures such as fail-
safes, so that the equoduct does not cause bodily injury, fire or other
consequential damage droduct.
5. This product is not designed
6. No one is permitted to reproducwhole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any qnt or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
相关型号：
©2020 ICPDF网 联系我们和版权申明