HAT1046R [ETC]
;
ETC 
HAT1046R
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-1222 (Z)
1st. Edition
Mar. 2001
Features
•
•
•
•
Low-voltage drive (2.5 V drive)
Low on resistance
Capable of 4 V gate drive
Low on-resistance
RDS(on) = 30 mΩ typ. (at VGS = –4 V)
External View
SOP-8
5
6
7
8
4
3
2
1
6
5
7 8
D D
D D
4
G
2
G
1, 3
2, 4
Source
Gate
S 3
1
S
5, 6, 7, 8 Drain
MOS2
MOS1
HAT1046R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Value
–20
±12
–6
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
V
ID
A
Drain peak current
ID (pulse)*1
–48
–6
A
Body-drain diode reverse drain
current
IDR
A
Permissible channel loss
Pch*2
Pch*2
Tch
2.0
W
W
°C
°C
3.0
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
4. Value at Tch=25°C, Rg ≥ 50Ω
2
HAT1046R
Electrical Characteristics
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–20
—
—
V
ID = –10 mA, VGS = 0
Gate to source cutoff current
IGSS
—
—
—
—
11
30
±0.1
–1
µA
µA
V
VGS = ±12 V, VDS = 0
VDS = –20 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –3 A, VDS = –10 V*1
ID = –3 A, VGS = –4 V*1
Zero gate voltage drain current IDSS
—
Gate to source cutoff voltage
Forward transfer admittance
VGS(off)
|yfs|
–0.4
6.5
—
–1.4
—
S
Static drain to source on state RDS(on)
resistance
40
mΩ
RDS(on)
—
—
—
—
—
—
—
—
—
—
—
—
45
60
—
mΩ
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ID = –3 A, VGS = –2.5 V*1
VDS = –10 V, VGS = 0
f = 1 MHz
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Ciss
Coss
Crss
Qg
1630
700
410
12
—
—
—
VDD = –10 V
VGS = –4 V
Qgs
Qgd
td(on)
tr
8
—
4
—
ID = –6 A
35
—
VGS = –4 V, ID = –3 A
VDD –10 V
180
155
185
–0.85
—
Turn-off delay time
Fall time
td(off)
tf
—
—
Body-drain diode forward
voltage
VDF
–1.11
IF = –6 A, VGS = 0*4
Body-drain diode reverse
recovery time
trr
—
65
—
ns
IF = –6 A, VGS = 0
diF/dt = 20 A/µs
Note: 1. Pulse measurement
3
HAT1046R
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
4.0
3.0
2.0
1.0
-100
10 µs
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), PW < 10 s
-30
-10
100 µs
-3
-1
Operation in
this area is
limited by RDS(on)
-0.3
-0.1
Ta = 25°C
1 shot Pulse
1 Drive Operation
-0.03
-0.01
0
50
100
150
200
-0.1 -0.3
-1
-3
-10 -30 -100
Ambient Temperature Ta (°C)
Drain to source Voltage VDS (V)
Note 6: When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
Typical Transfer Characteristics
-10 V
-5 V
-4 V
-20
-16
-12
-8
-20
-16
-12
-8
-3 V
Tc = -25°C
25°C
75°C
V
= -10 V
DS
-4
-4
Pulse Test
Pulse Test
V
= -1.5 V
-8
GS
0
0
-1
-2
-3
-4
-5
-2
-4
-6
-10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
4
HAT1046R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
0.5
-0.5
-0.4
-0.3
-0.2
-0.1
Pulse Test
Pulse Test
0.2
0.1
V
GS
= -2.5 V
0.05
-4 V
I
= -5 A
D
0.02
-2 A
0.01
-1 A
0.005
-6
0
-2
-4
-8
-10
0.2
0.5
1
2
5
10
20
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
50
20
0.1
Pulse Test
Tc = -25°C
0.08
0.06
0.04
0.02
-2, -1 A
I
= -5A
D
10
5
V
= -2.5 V
75°C
25°C
GS
-5, -2 , -1 A
2
1
V
= -10 V
DS
-4 V
Pulse Test
0
-40
0.5
-0.2
0
40
80
120
160
-20
-0.5 -1
-2
-5
-10
Case Temperature Tc (°C)
Drain Current ID (A)
5
HAT1046R
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
5000
di / dt = 20 A / µs
= 0, Ta = 25°C
V
GS
Ciss
2000
1000
500
Coss
Crss
200
100
50
200
100
50
20
10
V
= 0
20
10
GS
f = 1 MHz
-0.2
-0.5 -1
-2
-5 -10 -20
0
-4
-8
-12
-16
-20
Drain to Source Voltage VDS (V)
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
-20
-16
-12
-8
0
-10
-20
-30
0
V
= -5 V
-10 V
-20 V
DD
-2
-4
V
= -5 V
0, 5 V
V
GS
DS
V
GS
-6
V
DD
= -20 V
-10 V
-5 V
-8
-4
-40
-50
Pulse Test
-1.6
I
= -6 A
D
-10
40
0
-0.4
-0.8
-1.2
-2.0
0
8
16
24
32
Source to Drain Voltage VSD (V)
Gate Charge Qg (nc)
6
HAT1046R
Switching Characteristic
1000
t
r
300
100
t
f
t
d(off)
t
d(on)
30
10
V
= -4 V, V
=-10V
DD
GS
PW = 3 µs, duty < 1 %
-0.5 -1 -2 -5 -10 -20
Drain Current ID (A)
-0.2
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
R
L
90%
90%
V
DD
Vin
-4 V
90%
10%
50Ω
= -10 V
10%
Vout
td(off)
td(on)
t
f
tr
7
HAT1046R
Normalized Transient Thermal Impedance vs. Pulse Width (1 drive Operation)
10
D = 1
0.5
1
0.1
0.1
θ
θ
γ
θ
ch-f(t) = s (t) • ch - f
ch-f = 125°C/W, Ta = 25°C
0.01
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PW
T
P
DM
D =
0.001
PW
T
0.0001
100 µ
1 m
10 m
100 m
1
10
100
1000
10000
10 µ
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D = 1
0.5
1
0.1
0.1
ch-f(t) = s (t) • ch - f
ch-f = 166°C/W, Ta = 25°C
θ
θ
γ
θ
0.01
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PW
T
P
DM
D =
0.001
PW
T
0.0001
100 µ
1 m
10 m
100 m
1
10
100
1000
10000
10 µ
Pulse Width PW (S)
8
HAT1046R
Package Dimensions
Unit: mm
0~8°
0.15max.
5.0max.
4.8min.
8
7
6
5
0.25max.
0.19min.
Pin No.
1
2
3
4
0.75max.
1.27typ.
0.51max.
0.33min.
0.15
0.25 M
Hitachi Code
JEDEC
EIAJ
FP-8DA
—
—
9
HAT1046R
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: (03) 3270-2111 Fax: (03) 3270-5109
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
10
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