HAT1047R-EL-E [RENESAS]
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| 型号： | HAT1047R-EL-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 暂无描述 晶体 开关 晶体管 功率场效应晶体管 脉冲 电源开关 光电二极管 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HAT1047R, HAT1047RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G0074-0500Z
(Previous ADE-208-1545D(Z))
Rev.5.00
Aug.27.2003
Features
•
•
•
•
For Automotive Application (at Type Code "J")
Low on-resistance
Capable of –4.5 V gate drive
High density mounting
Outline
SOP-8
5
6
7
8
4
3
5 6
D D
7
D
8
D
2
1
4
G
1, 2, 3
4
Source
Gate
5, 6, 7, 8 Drain
S
1
S
2
S
3
Rev.5.00, Aug.27.2003, page 1 of 9
HAT1047R, HAT1047RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VDSS
VGSS
ID
Ratings
–30
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
±20
V
–14
A
Note1
Drain peak current
ID(pulse)
–112
–14
A
Body-drain diode reverse drain current IDR
A
Note3
Avalanche current HAT1047R
HAT1047RJ
IAP
—
—
A
–14
Note3
Avalanche energy HAT1047R
HAT1047RJ
EAR
—
—
mJ
W
°C
°C
19.6
2.5
Channel dissipation
Pch Note2
Tch
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.5.00, Aug.27.2003, page 2 of 9
HAT1047R, HAT1047RJ
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS –30
Gate to source breakdown voltage V(BR)GSS ±20
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ± 16V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –24 V, VGS = 0
Ta = 125°C
—
—
mV
µA
µA
µA
µA
V
Gate to source leak current
IGSS
IDSS
IDSS
—
—
—
—
–1.0
—
—
9.6
—
—
—
—
—
—
—
—
—
—
—
—
—
±10
±1
—
Zero gate voltage drain current
—
Zero gate voltage
drain current
HAT1047R
—
HAT1047RJ IDSS
—
–20
–2.5
12
25
—
Gate to source cutoff voltage
Static drain to source on state
resistance
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
VDS = –10 V, ID = –1 mA
ID = –7 A, VGS = –10 V Note4
ID = –7 A, VGS = –4.5 V Note4
ID = –7 A, VDS = –10 V Note4
VDS = –10 V
10
19
16
3500
750
520
64
10
12
23
45
80
25
mΩ
mΩ
S
Forward transfer admittance
Input capacitance
Ciss
Coss
Crss
Qg
—
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Total gate charge
—
VGS = 0
—
f = 1 MHz
—
VDD = –10 V
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
—
VGS = –10 V
—
ID = –14 A
—
VGS = –10 V, ID = –7A
VDD –10 V
—
Turn-off delay time
Fall time
td(off)
tf
—
RL = 1.43 Ω
—
RL = 4.7 Ω
IF = –14 A, VGS = 0 Note4
Body–drain diode forward voltage VDF
–0.82 –1.07
45
Body–drain diode reverse
recovery time
trr
—
ns
IF = –14 A, VGS = 0
diF/ dt = 100 A/µs
Notes: 4. Pulse test
Rev.5.00, Aug.27.2003, page 3 of 9
HAT1047R, HAT1047RJ
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
4.0
3.0
2.0
1.0
-500
-100
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
10 µs
-10
-1
Operation in
this area is
limited by RDS(on)
-0.1
Ta = 25°C
1 shot Pulse
-0.01
0
50
100
150
200
-0.1
-0.3
-1
-3
-10 -30 -100
(V)
Ambient Temperature Ta (°C)
Drain to Source Voltage
V
DS
Note 1:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
Typical Transfer Characteristics
-50
-40
-30
-20
-10
-50
-40
-30
-20
-10
-10 V
-8 V
Pulse Test
-4 V
V
= -10 V
DS
Pulse Test
-3 V
75°C
25°C
Tc = -25°C
V
= -2 V
-8
GS
0
0
-1
-2
-3
-4
-5
-2
-4
-6
-10
Drain to Source Voltage
V
(V)
Gate to Source Voltage
V
(V)
DS
GS
Rev.5.00, Aug.27.2003, page 4 of 9
HAT1047R, HAT1047RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
100
-200
-160
-120
-80
Pulse Test
I
= -10 A
D
Pulse Test
50
-4.5 V
20
10
5
-5 A
-2 A
V
GS
= -10 V
-40
2
1.0
-12
Gate to Source Voltage
0
-4
-8
-16
-20
-100
-200
-10 -20
-5
Drain Current I
D
-50
-1 -2
V
(V)
(A)
GS
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
500
40
Pulse Test
V
= -10 V
DS
200 Pulse Test
-10 A
32
24
16
100
50
Tc = –25°C
V
= -4.5 V
GS
20
10
5
I
= -2,-5 A
D
25°C
75°C
-2, -5, -10 A
120
2
1.0
0.5
8
0
-10 V
-40
0
40
80
160
0.1
1.0
Drain Current
10
100
Case Temperature Tc (°C)
I
(A)
D
Rev.5.00, Aug.27.2003, page 5 of 9
HAT1047R, HAT1047RJ
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
30000
10000
500
V
= 0
GS
f = 1 MHz
200
100
Ciss
50
1000
100
Coss
Crss
20
10
di / dt = 100 A / µs
= 0, Ta = 25°C
V
GS
-5 -10 -20
Reverse Drain Current
-1
-2
-50 -100
(A)
0
-10
-20
-30
-40
DS
-50
(V)
I
DR
Drain to Source Voltage V
Dynamic Input Characteristics
Switching Characteristics
= -10 V, V = -10 V
1000
500
0
0
V
GS
DD
V
= - 5 V
-10 V
DD
PW = 5 µs, duty < 1 %
-25 V
-10
-20
-30
-40
-50
-4
-8
-12
200
100
50
t
V
r
f
DS
t
d(off)
V
V
= - 5 V
-10 V
GS
DD
t
-25 V
20
10
t
d(on)
-16
-20
I
= -14 A
16
D
-10 -20
-0.1 -0.2
-1 -2
-0.5
Drain Current
-5
(A)
0
32
48
64
80
Gate Charge Qg (nc)
I
D
Rev.5.00, Aug.27.2003, page 6 of 9
HAT1047R, HAT1047RJ
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
-50
-40
-30
-20
-10
I
= -14 A
AP
-10 V
V
= -15 V
DD
duty < 0.1 %
-5V
Ω
Rg > 50
V
= 0, 5 V
GS
4
0
Pulse Test
0
-0.4
-0.8
-1.2
-1.6
-2.0
(V)
25
50
75
100
125
150
Channel Temperature Tch (°C)
Source to Drain Voltage
V
SDF
Avalanche Test Circuit
Avalanche Waveform
V
DSS
1
2
AP2
•
E
=
L • I
AR
V
- V
DD
DSS
L
V
DS
Monitor
I
AP
Monitor
V
(BR)DSS
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
-15 V
50Ω
V
DD
0
Rev.5.00, Aug.27.2003, page 7 of 9
HAT1047R, HAT1047RJ
Normalized Transient Thermal Impedance vs. Pulse Width
10
D = 1
1
0.5
0.1
0.1
θ
θ
γ
θ
ch - f(t) = s (t) x ch - f
ch - f = 83.3°C/W, Ta = 25°C
0.01
0.001
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PW
T
P
DM
D =
PW
T
0.0001
100 µ
1 m
10 m
100 m
1
10
100
1000
1000
10 µ
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Switching Time Waveform
10%
Vout
Monitor
Vin
D.U.T.
Rg
R
L
90%
90%
10%
V
DD
= -10 V
Vin
-10 V
90%
10%
Vout
td(off)
tr
td(on)
t
f
Rev.5.00, Aug.27.2003, page 8 of 9
HAT1047R, HAT1047RJ
Package Dimensions
As of January, 2003
Unit: mm
4.90
5.3 Max
8
5
1
4
+ 0.10
– 0.30
6.10
0.75 Max
1.27
1.08
0˚ – 8˚
+ 0.67
– 0.20
0.60
*0.42 0.08
0.40 0.06
0.15
M
0.25
Package Code
JEDEC
JEITA
FP-8DA
Conforms
—
*Dimension including the plating thickness
Base material dimension
Mass (reference value)
0.085 g
Rev.5.00, Aug.27.2003, page 9 of 9
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Colophon 1.0
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