HAT1044M [HITACHI]
Silicon P Channel Power MOS FET Power Switching; 硅P沟道功率MOS FET电源开关
| 型号： | HAT1044M |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon P Channel Power MOS FET Power Switching |
| 文件： | 总4页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HAT1044M
Silicon P Channel Power MOS FET
Power Switching
ADE-208-753C(Z)
Preliminary
4th. Edition
December 1998
Features
•
•
•
•
Low on-resistance
Low drive current
High density mounting
4.5V gate drive device can be driven from 5V source
Outline
TSOP–6
4
5
6
1 2
D D
5
D
6
D
3
2
1
3
G
4
3
Source
Gate
1, 2, 5, 6 Drain
S
4
HAT1044M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
-30
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID*2
±20
V
-4.5
A
1
*
Drain peak current
ID(pulse)
-18
A
Body-drain diode reverse drain current IDR*2
-4.5
A
2
Channel dissipation
Pch(pulse)
*
2.0
W
W
°C
°C
3
Pch(continuous)
Tch
*
1.05
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10mA, VGS = 0
VGS = ±20V, VDS = 0
VDS = -30 V, VGS = 0
VDS = -10V, I D = -1mA
ID = -3A, VGS = -10V *1
ID = -3A, VGS = -4.5V*1
ID = -3A, VDS = -10V*1
VDS = -10V
Drain to source breakdown voltage V(BR)DSS -30
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
—
—
-1.0
—
—
3
—
±0.1
-1
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
-2.5
60
105
—
50
mΩ
mΩ
S
80
Forward transfer admittance
Input capacitance
5.5
600
220
150
12
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
—
VGS = 0
—
f = 1MHz
—
VGS = -10V, ID = -3A
RL = 3.3Ω
Rise time
85
—
Turn-off delay time
td(off)
tf
55
—
Fall time
55
—
Body–drain diode forward voltage VDF
-0.95
50
—
IF = -4.5A, VGS = 0*1
Body–drain diode reverse
recovery time
trr
—
ns
IF = -4.5A, VGS = 0
diF/ dt =-20A/µs
Note: 1. Pulse test
2
HAT1044M
Package Dimensions
Unit: mm
+ 0.10
– 0.05
0.15
0.3 ± 0.1
0 ~ 0.1
1.0
2.95 ± 0.15
1.0
TSOP-6
Hitachi Code
EIAJ
-
-
JEDEC
3
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
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Tel: 535-2100
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3F, Hung Kuo Building. No.167,
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Electronic Components Group.
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Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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