HAT1043M [RENESAS]
Silicon P Channel Power MOS FET Power Switching; 硅P沟道功率MOS FET电源开关
| 型号： | HAT1043M |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel Power MOS FET Power Switching |
| 文件： | 总7页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HAT1043M
Silicon P Channel Power MOS FET
Power Switching
REJ03G1151-0600
(Previous: ADE-208-754D)
Rev.6.00
Sep 07, 2005
Features
•
•
•
•
Low on-resistance
Low drive current
High density mounting
2.5 V gate drive device can be driven from 3 V source
Outline
RENESAS Package code: PTSP0006FA-A
(Package name: TSOP-6)
1 2 5 6
D D
D
D
4
5
6
4
Source
Gate
Drain
3
G
3
1, 2, 5, 6
3
2
1
S
4
Rev.6.00 Sep 07, 2005 page 1 of 6
HAT1043M
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Value
–20
Unit
V
±12
V
–4.4
A
Note 1
Drain peak current
ID (pulse)
–17.6
–4.4
A
Note 2
Body-drain diode reverse drain current
Channel dissipation
IDR
Pch (pulse)
A
Note 2
Note 3
2.0
W
W
°C
°C
Channel dissipation
Pch (continuous)
Tch
1.05
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (50 × 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C
3. When using the alumina ceramic board (50 × 50 × 0.7 mm), Ta = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V (BR) DSS
IGSS
Min
–20
—
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
ID = –10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = –20 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –3 A, VGS = –4.5 V Note 4
ID = –3 A, VGS = –2.5 V Note 4
ID = –3 A, VDS = –10 V Note 4
VDS = –10 V
—
±0.1
–1
–1.4
65
110
—
µA
µA
V
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
IDSS
—
—
VGS (off)
RDS (on)
RDS (on)
|yfs|
–0.4
—
—
55
mΩ
mΩ
S
—
85
Forward transfer admittance
Input capacitance
4
7
Ciss
Coss
Crss
Qg
—
750
310
220
11
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
GS = 0
Output capacitance
—
—
f = 1 MHz
Reverse transfer capacitance
Total gate charge
—
—
—
—
VDD = –10 V
V
GS = –4.5 V
Gate to source charge
Gate to drain charge
Turn-on delay time
Qgs
Qgd
td (on)
tr
—
2
—
ID = –4.4 A
—
3.5
15
—
—
—
VGS = –4.5 V, ID = –3 A,
RL = 3.3 Ω
Rise time
—
100
85
—
Turn-off delay time
td (off)
tf
—
—
Fall time
—
100
—
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
—
–0.95 –1.23
50
IF = –4.4 A, VGS = 0
IF = –4.4 A, VGS = 0
diF/dt = –20 A/µs
trr
—
—
ns
Note: 4. Pulse test
Rev.6.00 Sep 07, 2005 page 2 of 6
HAT1043M
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
2.0
1.5
1.0
0.5
0
–30
–10
10 µs
100 µs
–3
–1
Operation in
this area is
limited by RDS (on)
–0.3
–0.1
Ta = 25°C
1 shot pulse
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
0
50
100
150
200
Drain to Source Voltage VDS (V)
Note 5:
When using the alumina ceramic board
(50 × 50 × 0.7 mm)
Ambient Temperature Ta (°C)
Test Condition:
When using the alumina ceramic board
(50 × 50 × 0.7 mm), (PW ≤ 5 s)
Typical Transfer Characteristics
Typical Output Characteristics
–10
–8
–6
–4
–2
0
–10
–8
–6
–4
–2
0
Pulse Test
–10 V
–4 V
VDS = –10 V
Pulse Test
–3 V
–2.5 V
–2 V
Tc = –25°C
VGS = –1.5 V
75°C
25°C
0
–2
–4
–6
–8
–10
0
–1
–2
–3
–4
–5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1000
–0.5
Pulse Test
Pulse Test
500
–0.4
–0.3
–0.2
–0.1
0
200
100
50
VGS = –2.5 V
–4.5 V
ID = –5 A
–2 A
–1 A
20
10
–0.1 –0.2 –0.5 –1 –2
–5 –10 –20
0
–4
–8
–12
–16
–20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.6.00 Sep 07, 2005 page 3 of 6
HAT1043M
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
50
250
Pulse Test
20
10
5
200
Tc = –25°C
–1 A, –2 A
150
25°C
ID = –5 A
2
1
75°C
–2.5 V
100
50
0
–5 A
–1 A, –2 A
0.5
VDS = –10 V
Pulse Test
0.2
0.1
VGS = –4.5 V
50
–50
0
100
150
200
–0.1 –0.3
–1
–3
–10 –30 –50
Case Temperature Tc (°C)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
500
3000
1000
Ciss
200
100
50
Coss
Crss
300
100
30
10
20
10
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
0
–4
–8
–12
–16 –20
–0.1 –0.2
–0.5 –1 –2 –5 –10
Drain to Source Voltage VDS (V)
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
Switching Characteristics
0
–10
–20
–30
–40
–50
0
–2
–4
–6
–8
–10
1000
500
VDD = –5 V
–10 V
–20 V
t
r
200
100
t
f
VGS
VDS
50
VDD = –5 V
–10 V
–20 V
t
d(off)
t
d(on)
20
10
5
VGS = –4.5 V, VDD = –10 V
PW = 5 µs, duty ≤ 1 %
ID = –4.4 A
0
4
8
12
16
20
–0.1 –0.2 –0.5 –1 –2
–5 –10 –20
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.6.00 Sep 07, 2005 page 4 of 6
HAT1043M
Reverse Drain Current vs.
Source to Drain Voltage
–10
–8
–6
–4
–2
0
–
5 V
VGS
= 0, 5 V
Pulse Test
–1.6 –2.0
0
–0.4
–0.8
–1.2
Source to Drain Voltage VSDF (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D = 1
0.5
0.1
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 119°C/W, Ta = 25°C
0.01
When using the alumina ceramic board
(50 × 50 × 0.7 mm)
PW
D =
PDM
T
0.001
PW
T
0.0001
10 µ
100 µ
1 m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
90%
RL
90%
10%
VDD
= –10 V
Vin
10 V
50 Ω
10%
Vout
t
t
t
t
f
d(on)
r
d(off)
Rev.6.00 Sep 07, 2005 page 5 of 6
HAT1043M
Package Dimensions
JEITA Package Code
SC-95 Modified
RENESAS Code
Package Name
MASS[Typ.]
0.012g
PTSP0006FA-A
TSOP-6 / TSOP-6V
D
A
e
Q
c
E
HE
L
L
P
L
1
Dimension in Millimeters
Reference
Symbol
Min
0.8
0
Nom
Max
1.1
0.1
1.0
A3
A
A
A
b
A1
A2
A3
x
S
A
M
e
0.8
0.9
0.25
0.32
0.3
b
0.25
0.1
0.4
b
1
A
A
2
1
A
c
0.13
0.11
2.95
1.6
0.15
c1
D
E
e
2.8
3.1
1.45
1.75
e
1
1.0
y
S
H
E
2.6
0.3
0.1
0.2
2.8
3.0
0.7
S
L
b
L
1
0.5
L
P
0.6
b
1
I1
x
0.05
0.05
0.45
c1
y
b
2
c
b
2
e
1
2.2
0.2
I1
0.8
A-A Section
Pattern of terminal position areas
Q
Ordering Information
Part Name
Quantity
Shipping Container
HAT1043M-EL-E
3000 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.6.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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