HAT1043 [HITACHI]
Silicon P Channel Power MOS FET Power Switching; 硅P沟道功率MOS FET电源开关
| 型号： | HAT1043 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon P Channel Power MOS FET Power Switching |
| 文件： | 总9页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HAT1043M
Silicon P Channel Power MOS FET
Power Switching
ADE-208-754D (Z)
5th Edition
February 1999
Features
•
•
•
•
Low on-resistance
Low drive current
High density mounting
2.5 V gate drive device can be driven from 3 V source
Outline
TSOP–6
4
5
6
1 2
D D
5
D
6
D
3
2
1
3
G
4
3
Source
Gate
1, 2, 5, 6 Drain
S
4
HAT1043M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
–20
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
ID(pulse)
±12
V
–4.4
A
Note 1
Drain peak current
–17.6
–4.4
A
Note 2
Body-drain diode reverse drain current IDR
A
Note 2
Channel dissipation
Pch(pulse)
2.0
W
W
°C
°C
Note 3
Pch (continuous)
Tch
1.05
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW ≤ 5 s, Ta = 25°C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = –20 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –3 A, VGS = –4.5 VNote 1
ID = –3 A, VGS = –2.5 VNote 1
ID = –3 A, VDS = –10 V Note 1
VDS = –10 V
Drain to source breakdown voltage V(BR)DSS –20
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
—
—
–0.4
—
—
4
—
±0.1
–1
–1.4
65
110
—
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
—
55
mΩ
mΩ
S
85
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
Qg
7
—
—
—
—
—
—
—
—
—
—
—
—
750
310
220
11
—
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Total Gate charge
—
VGS = 0
—
f = 1 MHz
—
VDD = –10 V
Gate to Source charge
Gate to Drain charge
Turn-on delay time
Qgs
Qgd
td(on)
tr
2
—
VGS = –4.5 V
3.5
15
—
ID= –4.4 A
—
VGS = –4.5 V, ID = –3 A
RL = 3.3 Ω
Rise time
100
85
—
Turn-off delay time
td(off)
tf
—
Fall time
100
—
Body–drain diode forward voltage VDF
–0.95 –1.23
50
IF = –4.4 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
ns
IF = –4.4 A, VGS = 0
diF/ dt = –20 A/ µs
Note: 1. Pulse test
2
HAT1043M
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
2.0
1.5
1.0
0.5
-100
-30
-10
-3
10 µs
100 µs
1 ms
-1
-0.3
-0.1
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
1 shot pulse
-0.03
-0.01
0
-3
-30
50
Ambient Temperature Ta (°C)
Test Condition
100
150
200
-0.1 -0.3
-1
-10
-100
Drain to Source Voltage
V
DS
(V)
Note 1 When using the alumina ceramic board
( 50x50x0.7mm)
When using the alumina ceramic board
(50x50x0.7mm),(PW ≤ 5s)
Typical Output Characteristics
Typical Transfer Characteristics
-10
-8
-10
-8
Pulse Test
-10 V
-4 V
V
= -10 V
DS
Pulse Test
-3 V
-2.5 V
-6
-6
-2 V
-4
-4
-2
-2
Tc = –25°C
25°C
75°C
V
GS
= -1.5 V
0
0
-1
-2
-3
-4
(V)
GS
-5
-2
-4
-6
-8
-10
(V)
Gate to Source Voltage
V
Drain to Source Voltage
V
DS
3
HAT1043M
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
-0.5
-0.4
-0.3
-0.2
-0.1
1000
Pulse Test
Pulse Test
500
200
100
50
V
= -2.5 V
-4.5 V
GS
I
= -5 A
D
-2 A
-1 A
20
10
-12
Gate to Source Voltage
-20
-10
0
-4
-8
-16
-20
-2
-0.5 -1
Drain Current
-5
(A)
-0.1 -0.2
V
(V)
I
GS
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
50
250
Pulse Test
V
= -10 V
DS
20 Pulse Test
200
150
100
10
5
Tc = –25 °C
75 °C
25 °C
I
= -5 A
D
2
1
-2.5 V
-1, -2 A
-5 A
0.5
-1, -2 A
50
0
V
= -4.5 V
50
0.2
0.1
GS
–50
0
100
150
200
-0.1 -0.3
-1
-3
-10
(A)
-30 -50
Case Temperature Tc (°C)
Drain Current I
D
4
HAT1043M
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
500
V
GS
= 0
f = 1 MHz
200
100
Ciss
Coss
Crss
300
100
50
30
10
20
10
di / dt = 20 A / µs
V
= 0, Ta = 25 °C
GS
-0.1 -0.2 -0.5 -1
-2
-5
(A)
-10
0
-4
-8
-12
-16
-20
Reverse Drain Current
I
DR
Drain to Source Voltage V
(V)
DS
Dynamic Input Characteristics
Switching Characteristics
1000
500
0
-10
-20
-30
-40
-50
0
V
= - 5 V
-10 V
DD
-20 V
t
-2
r
200
100
50
t
f
V
DS
-4
-6
V
= - 5 V
-10 V
V
DD
t
d(off)
GS
t
d(on)
-20 V
20
10
-8
I
= -4.4 A
V
= -4.5 V, V
= -10 V
D
GS
DD
PW = 5 µs, duty < 1 %
-10
20
-10 -20
-0.1 -0.2
-1 -2
-0.5
Drain Current
-5
(A)
0
4
8
12
16
Gate Charge Qg (nc)
I
D
5
HAT1043M
Reverse Drain Current vs.
Source to Drain Voltage
-10
-8
-5 V
-6
V
= 0, 5 V
GS
-4
-2
Pulse Test
0
-0.4
-0.8
-1.2
-1.6
-2.0
(V)
Source to Drain Voltage
V
SDF
Switching Time Test Circuit
Switching Time Waveform
10%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
R
L
90%
90%
V
DD
Vin
10 V
90%
10%
50Ω
= 10 V
10%
Vout
td(off)
td(on)
t
f
tr
6
HAT1043M
Normalized Transient Thermal Impedance vs. Pulse Width
10
D = 1
0.5
1
0.2
0.1
0.05
0.1
0.02
θ
θ
γ
θ
ch – f(t) = s (t) • ch – f
ch – f = 119 °C/W, Ta = 25 °C
0.01
0.001
0.01
When using the alumina ceramic board
(50x50x0.7 mm)
PW
T
P
DM
D =
PW
T
0.0001
100 µ
1 m
10 m
100 m
1
10
100
1000
10000
10 µ
Pulse Width PW (S)
7
HAT1043M
Package Dimensions
Unit: mm
+ 0.10
– 0.05
0.15
0.3±0.1
0 ~ 0.1
1.0
2.95±0.15
1.0
TSOP-6
Hitachi Code
EIAJ
-
-
JEDEC
8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
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Asia (Taiwan)
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
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Germany
Tel: <49> (89) 9 9180-0
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179 East Tasman Drive,
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Taipei Branch Office
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Tel: <886> (2) 2718-3666
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Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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