2N7002F215 [NXP]
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.; N沟道增强模式场效应晶体管(FET )中使用的TrenchMOS技术的塑料封装。型号: | 2N7002F215 |
厂家: | NXP |
描述: | N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. |
文件: | 总12页 (文件大小:100K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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