2N7002K [DIODES]
60V N-Channel Enhancement Mode MOSFET - ESD Protected; 60V N沟道增强型MOSFET - ESD保护
| 型号： | 2N7002K |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 文件： | 总5页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002K
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Component are in compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: SOT-23 Package
D
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : K72
3
1
2
G
S
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol
VD S
Limit
60
Units
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VG S
+20
300
V
mA
ID
1 )
Pulsed Drain Current
ID M
2000
mA
TA =25O
TA =75O
C
C
350
210
Maximum Power Dissipation
PD
mW
O C
Operating Junction and Storage Temperature Range
Junction-to Ambient Thermal Resistance(PCB mounted)2
TJ ,TS T G
-55 to + 150
357
Rθ J A
O C/W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JAN.03.2007
PAGE . 1
2N7002K
ELECTRICALCHARACTERISTICS
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage
BVD S S
VG S ( t h )
RD S ( o n )
RD S ( o n )
ID S S
VG S =0V, ID =10uA
VD S =VG S , ID =250uA
VGS =4.5V, I D =200mA
VGS =10V, I D =500mA
VD S =60V, VGS =0V
60
-
-
V
V
1
-
2.5
4.0
3.0
1
-
-
Ω
-
-
-
-
uA
uA
mS
V
IG S S
VG S =+20V, VD S =0V
VD S =15V, ID =250mA
IS =200mA , VG S =0V
-
100
-
-
-
+10
-
Forward Transconductance
gf S
Diode Forward Voltage
Dynamic
VS D
0.82
1.3
VD S =15V, ID =200mA
VGS=4.5V
Total Gate Charge
Qg
-
-
0.8
nC
ns
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
to n
-
-
-
-
-
-
-
-
-
-
20
40
35
10
5
VD D =30V , RL=150Ω
ID =200mA , VGE N=10V
RG=10Ω
to f f
Ci s s
Co s s
Cr s s
VD S =25V, VG S =0V
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
pF
V
DD
VDD
Switching
Test Circuit
Gate Charge
Test Circuit
RL
RL
V
IN
VGS
V
OUT
1mA
RG
RG
STAD-JAN.03.2007
PAGE . 2
2N7002K
Typical Characteristics Curves (TA=25OC,unless otherwise noted)
1.2
1
1.2
V
DS=10V
V
GS= 10V ~ 6.0V
5.0V
4.0V
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
T
J
=25OC
3.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
FIG.1-OutputCharacteristic
FIG.2- Transfer Characteristic
5
4
3
2
1
0
5
4
3
ID=500mA
V
GS=4.5V
2
1
0
ID=200mA
V
GS=10V
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
1.8
V
GS=10V
ID=500mA
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
FIG.5- On Resistance vs Junction Temperature
STAD-JAN.03.2007
PAGE . 3
2N7002K
10
8
V
DS=10V
Vgs
I
D
=250mA
Qg
6
4
2
Qsw
Vgs(th)
0
0
0.2
0.4
0.6
0.8
1
Qg(th)
Qgs
Qg - Gate Charge (nC)
Qgd
Qg
Fig.6 - Gate Charge Waveform
Fig.7 - Gate Charge
1.2
88
ID=250uA
ID=250uA
86
84
82
80
78
76
74
72
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
TJ - Junction Temperature (oC)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
10
V
GS=0V
1
25OC
=125OC
0.1
T
J
-55OC
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
STAD-JAN.03.2007
PAGE . 4
2N7002K
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2007
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-JAN.03.2007
PAGE . 5
相关型号：
2N7002K-13
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
DIODES
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