2N7002H-7 [DIODES]
Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;
| 型号： | 2N7002H-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002H
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
N-Channel MOSFET
ID max
V(BR)DSS
RDS(ON) max
7.5Ω @ VGS = 5V
TA = +25°C
Low On-Resistance
Low Gate Threshold Voltage
60V
210mA
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Motor Control
Power Management Functions
Weight: 0.008 grams (Approximate)
D
SOT23
D
G
S
S
G
Top View
Equivalent Circuit
Top View
Ordering Information (Note 4)
Part Number
2N7002H-7
2N7002H-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H7H = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
H7H
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
Code
B
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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July 2015
© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 - 2
2N7002H
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
60
V
VDSS
Gate-Source Voltage
Continuous
Pulsed
±20
±40
V
VGSS
TA = +25°C
TA = +85°C
TA = +100°C
170
120
105
Steady
State
mA
Continuous Drain Current (Note 5) VGS = 10V
ID
TA = +25°C
TA = +85°C
TA = +100°C
Continuous
Pulsed
210
150
135
Steady
State
mA
Continuous Drain Current (Note 6) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
ID
0.5
2
500
A
IS
mA
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
370
510
Units
(Note 5)
Total Power Dissipation
(Note 6)
mW
(Note 5)
(Note 6)
341
249
-55 to +150
Thermal Resistance, Junction to Ambient
°C/W
°C
R
JA
Operating and Storage Temperature Range
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
60
V
1.0
BVDSS
IDSS
VGS = 0V, ID = 10µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
2.0
3.0
7.5
1.5
V
Ω
V
3.0
VGS(th)
RDS (ON)
VSD
VDS = VGS, ID = 250µA
VGS = 5.0V, ID = 0.05A
VGS = 0V, IS = 115mA
Static Drain-Source On-Resistance
Diode Forward Voltage
0.78
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
26
2.8
2.1
352
203
123
3.7
2.9
8.4
4.7
9.3
3.5
pF
pF
pF
Ciss
Coss
Crss
Qg
-
-
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
pC
Qgs
Qgd
tD(on)
tr
VDS = 10V, ID = 250mA
Gate-Drain Charge
Turn-On Delay Time
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
Turn-On Rise Time
ns
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
trr
IS = 0.5A, dI/dt = 100A/μs
IS = 0.5A, dI/dt = 100A/μs
-
-
nC
Qrr
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 - 2
2N7002H
1.0
0.9
0.8
0.7
0.6
0.5
0.5
0.4
0.3
0.2
0.1
V
= 10V
GS
V
= 5.0V
V
= 8.0V
DS
GS
V
= 6.0V
GS
V
= 5.0V
GS
0.4
0.3
0.2
0.1
0.0
T
= 150C
A
V
= 4.5V
GS
T
= 85C
A
T
= 125C
A
T
= 25C
A
V
= 4.0V
GS
V
= 3.5V
GS
T
= -55C
A
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
7
8
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
10
10
9
9
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
V
= 5.0V
GS
I
= 50mA
D
0
2
4
6
8
10 12 14 16 18 20
0
0.1
0.2
0.3
0.4
0.5
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
5
4
3
2
1
0
2.5
2
V
= 5V
GS
VGS = 10V
I
= 100mA
D
T
= 150C
= 125C
A
1.5
1
T
A
T
T
= 85C
A
A
VGS = 5V
ID = 50mA
= 25C
T
= -55C
A
0.5
0
0
0.1
0.2
0.3
0.4
-50 -25
0
25
50
75 100 125 150
ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
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© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 - 2
2N7002H
5
4
3
2
1
0
5
4
3
2
1
0
I
= 250µA
D
V
I
= 5V
GS
= 50mA
D
I
= 1mA
D
V
I
= 10V
GS
= 100mA
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0.5
0.4
0.3
0.2
0.1
0
100
f = 1MHz
C
iss
TA= 85°C
TA= 150°C
10
TA= 25C
C
oss
TA= 125C
TA= -55C
C
rss
1
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10 Typical Junction Capacitance
10
10
R
DS(on)
Limited
P
= 100µs
W
8
6
4
2
0
1
0.1
V
= 10V
DS
I
= 250mA
D
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
TJ(max) = 150°C
TA = 25°C
W
0.01
0.001
P
= 10ms
W
P
= 1ms
VGS = 10V
Single Pulse
W
DUT on 1 * MRP Board
0
0.1
0.2
0.3 0.4 0.5
0.6 0.7 0.8
1
10
100
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 - 2
2N7002H
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 346°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 15 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
H
SOT23
Min Max
GAUGE PLANE
Dim
A
B
C
D
F
G
H
J
Typ
0.25
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.51
1.40
2.50
1.03 0.915
0.60 0.535
0.40
1.30
2.40
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
G
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
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© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 - 2
2N7002H
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS38025 Rev. 1 - 2
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