2N7002K [SECOS]
N-Ch Small Signal MOSFET with ESD Protection; N沟道小信号MOSFET与ESD保护
| 型号： | 2N7002K |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Small Signal MOSFET with ESD Protection |
| 文件： | 总4页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002K
0.3A , 60V , RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
RDS(ON), VGS@10V, IDS@500mA=3
RDS(ON), VGS@4.5V, IDS@200mA=4
A
L
Advanced Trench Process Technology
3
3
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers：Relays, Displays, Lamps,
Solenoids, Memories, etc.
Top View
C B
1
1
2
2
K
F
E
D
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
H
J
G
MECHANICAL DATA
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750,
Method 2026
Millimeter
Millimeter
REF.
REF.
Min.
Max.
3.04
2.55
1.40
1.15
2.04
0.50
Min.
0.09
0.45
0.08
Max.
0.18
0.60
0.177
A
B
C
D
E
F
2.80
2.10
1.20
0.89
1.78
0.30
G
H
J
K
L
Approx. Weight: 0.008 gram
0.6 REF.
0.89
1.02
MARKING
Drain
K72
Gate
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7’ inch
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
Unit
V
60
Drain-Source Voltage
Gate-Source Voltage
±20
300
VGS
V
Continuous Drain Current
Pulsed Drain Current 1
ID
mA
mA
2000
0.35
0.21
IDM
TA=25°C
TA=75°C
Maximum Power Dissipation
PD
W
Thermal Resistance Junction-Ambient (PCB mounted) 2
R
357
°C/W
°C
JA
Operating Junction and Storage Temperature
TJ, TSTG
-55 ~ +150
Notes:
1. Maximum DC current limited by the package.
2. Surface mounted on FR4 board, t < 5sec.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Mar-2011 Rev. A
Page 1 of 4
2N7002K
0.3A , 60V , RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
VGS =0, ID =10μA
DS = VGS, ID =250μA
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
VGS(th)
60
-
-
-
-
-
-
-
-
2.5
4
V
V
V
1
VGS =4.5V, ID =200mA
VGS =10V, ID =500mA
-
Drain-Source On-Resistance
rDS(ON)
Ω
-
3
VDS =60V, VGS =0
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
IDSS
IGSS
gfs
-
1
μA
μA
VDS = 0, VGS = ±20V
-
±10
-
VDS = 15V, ID =250 mA
100
mS
Dynamic
V
DS=15V, VGS=5V, ID=200mA
Total Gate Charge
Turn-On Time
Qg
-
-
-
0.8
20
nC
nS
VDD=30V, RL=150Ω,
ID=200mA, VGEN=10V,
RG=10Ωꢀ
t(on)
-
-
Turn-Off Time
t(off)
-
40
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
35
10
5
pF
VDS=25V, VGS=0, f=1MHz
IS=200mA, VGS=0
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage
VSD
IS
-
-
-
0.82
1.3
300
V
Continuous Diode Forward Current
Pulse Diode Forward Current
-
-
mA
mA
ISM
2000
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Mar-2011 Rev. A
Page 2 of 4
2N7002K
0.3A , 60V , RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
CHARACTERISTIC CURVE
FIG.1‐Ouput Characteristic
FIG.2‐Transfer Characteristic
FIG.3‐On Resistance vs Drain Current
FIG.4‐ On Resistance vs Gate to Source Voltage
FIG.5‐On Resistance vs Junction Temperature
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Mar-2011 Rev. A
Page 3 of 4
2N7002K
0.3A , 60V , RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
CHARACTERISTIC CURVE
FIG.6‐Gate Charge Waveform
FIG.7‐Gate Charge
FIG.8‐Threshold Voltage vs Temperature
FIG.9‐Breakdown Voltage vs Junction Temperature
FIG.10‐Source‐Drain Diode Forward Voltage
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Mar-2011 Rev. A
Page 4 of 4
相关型号：
2N7002K-13
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
DIODES
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