2N7002K [VISHAY]
N-Channel 60-V (D-S) MOSFET; N通道60 -V （D -S ）的MOSFET
| 型号： | 2N7002K |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S) MOSFET |
| 文件： | 总3页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
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1
Document Number: 73307
S-50261Rev. A, 21-Feb-05
SPICE Device Model 2N7002K
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Simulated Measured
Parameter
Symbol
Test Condition
Unit
Data
Data
Static
Gate Threshold Voltage
On-State Drain Currenta
VGS(th)
ID(on)
1.6
4
V
A
V
DS = VGS, ID = 250 µA
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 500 mA
1.1
1.6
240
0.85
1.1
1.6
Drain-Source On-State Resistancea
rDS(on)
Ω
VGS = 4.5 V, ID = 200 mA
Forward Transconductancea
Diode Forward Voltagea
gfs
VDS = 10 V, ID = 200 mA
IS = 200 mA, VGS = 0 V
550
0.87
S
V
VSD
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
0.30
0.11
0.15
0.40
0.11
0.15
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
nC
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 73307
S-50261Rev. A, 21-Feb-05
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
www.vishay.com
Document Number: 73307
S-50261Rev. A, 21-Feb-05
3
相关型号：
2N7002K-13
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
DIODES
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