2N7002K [KEC]

N Channel MOSFET; N沟道MOSFET


型号：	2N7002K
厂家：	KEC(KOREA ELECTRONICS)
描述：	N Channel MOSFET N沟道MOSFET 晶体晶体管开关光电二极管 PC
文件：	总4页 (文件大小：71K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N7002K

SEMICONDUCTOR

N Channel MOSFET

ESD Protected 2000V

TECHNICAL DATA

INTERFACE AND SWITCHING APPLICATION.

FEATURES

ESD Protected 2000V.

DIM MILLIMETERS

2.93+ 0.20

High density cell design for low R_DS(ON)

Voltage controlled small signal switch.

Rugged and reliable.

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

High saturation current capablity.

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_DSS

V_GSS

I_D

RATING

UNIT

Drain-Source Voltage

1. SOURCE

2. GATE

Gate-Source Voltage

300

3. DRAIN

Continuous

Drain Current

Pulsed ^{(Note 1)}

I_DP

1200

300

Drain Power Dissipation ^{(Note 2)}

Junction Temperature

P_D

SOT-23

T_j

150

T_stg

Storage Temperature Range

-55 150

Note 1) Pulse Width 10 , Duty Cycle 1%

Note 2) Package mounted on a glass epoxy PCB(100mm²1mm)

EQUIVALENT CIRCUIT

Marking

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage, Forward

Gate-Body Leakage, Reverse

SYMBOL

BV_DSS

I_DSS

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_GS=0V, I_D=10 A

V_DS=60V, V_GS=0V

V_GS=20V, V_DS=0V

V_GS=-20V, V_DS=0V

I_GSSF

-10

I_GSSR

2009. 11. 17

Revision No : 2

1/4

2N7002K

ELECTRICAL CHARACTERISTICS (Ta=25

ON CHARACTERISTICS (Note 3)

)

CHARACTERISTIC

Gate Threshold Voltage

SYMBOL

V_th

TEST CONDITION

MIN.

TYP.

MAX.

2.35

1.8

UNIT

1.1

V_DS=V_GS, I_D=250 A

V_GS=10V, I_D=500mA

V_GS=5V, I_D=50mA

V_GS=10V, I_D=500mA

V_GS=5V, I_D=50mA

1.2

1.5

0.6

0.075

R_DS(ON)

Drain-Source ON Resistance

Drain-Source ON Voltage

2.1

0.9

V_DS(ON)

0.105

I_D(ON)

g_FS

On State Drain Current

500

200

V_GS=10V, V_DS

= 2 V_DS(ON)

V_DS=10V, I_D=500mA

Forward Transconductance

Drain-Source Diode Forward Voltage

580

760

V_SD

V_GS=0V, I_S=200mA (Note1)

1150

Note 3) Pulse Test : Pulse Width 80 , Duty Cycle 1%

DYNAMIC CHARACTERISTICS

CHARACTERISTIC

Input Capacitance

SYMBOL

C_iss

TEST CONDITION

MIN.

TYP.

52.1

3.9

MAX.

UNIT

C_rss

V_DS=25V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

Output Capacitance

C_oss

7.7

t_on

Turn-On Time

Turn-Off Time

11.1

22.5

V_DD=30V, R_L=155 , I_D=190mA,

V_GS=10V

Switching Time

t_off

SWITCHING TIME TEST CIRCUIT

t_on

t_off

t_f

t_d(off)

t_d(on)

V_DD

90%

R_L

V_OUT

V_IN

V_OUT

OUTPUT

10%

V_GS

INVERTED

90%

50%

INPUT

10%

V_IN

PULSE WIDTH

2009. 11. 17

Revision No : 2

2/4

2N7002K

I - V

R - I

DS(ON) D

6.0

5.0

4.0

3.0

2.0

1.0

0.0

1.5

1.2

0.9

0.6

0.3

0.0

COMMON SOURCE

Ta = 25

10V

V_GS= 3V

_GS= 3V

7V 10V

0.4

0.1

0.2

0.3

0.5

0.6

0.0

1.0

2.0

3.0

4.0

5.0

DRAIN-SOURCE VOLTAGE V_DS(V)

DRAIN-CURRENT I_D(A)

- T

DS(ON)

V - T

4.0

1.4

Common Source

_GS=V_DS

I_D=250µA

3.5

3.0

2.5

1.3

1.2

1.1

V_GS=5V

I_D=50mA

2.0

1.5

1.0

0.5

0.9

0.8

0.7

V_GS=10V

I_D=500mA

0.0

0.6

-100

-50

100

150

-100

-50

100

150

JUNCTION TEMPERATURE T_j( _C

)

JUNCTION TEMPERATURE T_j( _C

)

- V

I _S- V_SD

1.0

0.8

0.6

0.4

0.2

0.0

COMMON SOURCE

V_DS=10V

-55 C

25 C

125 C

=1V

0.1

=0V

0.9

0.01

0.0

0.3

0.6

1.2

1.5

DRAIN-SOURCE VOLTAGE V_GS(V)

BODY DIODE FORWARD VOLTAGE V_SD(V)

2009. 11. 17

Revision No : 2

3/4

2N7002K

V_GS- Q _g

C - V_DS

1000

100

COMMON SOURCE

V_DS=30V

COMMON SOURCE

=0V

I_D=0.3A

f=1MHz

Ta=25 C

iss

oss

rss

(V)

GATE CHARGE Q (nC)

DRAIN-SOURCE VOLTAGE V

P_D- Ta

SOA

350

Tj=150 , Ta=25 ,Single

C C

Pulse,Package mounted

on a a glass epoxy

PCB(100mm²1mm)

300

250

200

150

100

PW 10

0.1

PW =1ms

PW =10ms

0.01

PW =100ms

0.001

0.0001

0.001

0.01

0.1

(V)

100

80 100 120 140 160

DRAIN-SOURCE VOLTAGE V

AMBIENT TEMPERATURE Ta ( C)

2009. 11. 17

Revision No : 2

4/4

相关型号：

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES