2N7002K [ONSEMI]
Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23; 小信号MOSFET 60 V 380 mA时，单N通道， SOT -23
| 型号： | 2N7002K |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 |
| 文件： | 总5页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002K
Small Signal MOSFET
60 V, 380 mA, Single, N−Channel, SOT−23
Features
• ESD Protected
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• Low R
DS(on)
• Surface Mount Package
• This is a Pb−Free Device
V
R
MAX
I MAX
D
(Note 1)
(BR)DSS
DS(on)
60 V
1.6 W @ 10 V
2.5 W @ 4.5 V
380 mA
Applications
• Low Side Load Switch
• Level Shift Circuits
• DC−DC Converter
Simplified Schematic
• Portable Applications i.e. DSC, PDA, Cell Phone, etc.
Gate
1
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
60
Unit
V
3
Drain
V
DSS
V
GS
20
V
Source
2
Drain Current (Note 1)
Steady State
I
D
mA
T = 25°C
A
320
230
A
T = 85°C
(Top View)
t < 5 s
T = 25°C
A
380
270
A
T = 85°C
MARKING DIAGRAM
& PIN ASSIGNMENT
Power Dissipation (Note 1)
Steady State
t < 5 s
P
D
mW
300
420
3
Drain
Pulsed Drain Current (t = 10 ms)
I
1.5
A
3
p
DM
1
Operating Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
STG
2
704 MG
G
SOT−23
CASE 318
STYLE 21
Source Current (Body Diode)
I
300
260
mA
S
1
2
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
Gate
Source
704
M
= Specific Device Code
= Date Code
= Pb−Free Package
Gate−Source ESD Rating
ESD
2000
V
(HBM, Method 3015)
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
ORDERING INFORMATION
Junction−to−Ambient − Steady State
R
417
°C/W
†
q
JA
Device
2N7002KT1G
Package
Shipping
(Note 1)
SOT−23
(Pb−Free)
3000/Tape & Reel
Junction−to−Ambient − t ≤ 5 s (Note 1)
R
300
q
JA
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
sq [1 oz] including traces)
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
July, 2008 − Rev. 4
2N7002K/D
2N7002K
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
71
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
V
= 0 V,
= 60 V
GS
T = 125°C
J
500
100
DS
V
GS
= 0 V,
T = 25°C
J
nA
V
DS
= 50 V
Gate−to−Source Leakage Current
I
V
= 0 V, V
=
20 V
10 V
5.0 V
10
450
150
mA
nA
nA
GSS
DS
DS
DS
GS
GS
GS
V
= 0 V, V
=
=
V
= 0 V, V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
GS
= V , I = 250 mA
1.0
2.5
V
GS(TH)
DS
D
Negative Threshold Temperature
Coefficient
V
/T
4.0
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 500 mA
1.19
1.33
80
1.6
2.5
W
DS(on)
GS
D
V
GS
= 4.5 V, I = 200 mA
D
Forward Transconductance
g
FS
V
= 5 V, I = 200 mA
S
DS
D
CHARGES AND CAPACITANCES
Input Capacitance
C
24.5
4.2
2.2
0.7
0.1
0.3
0.1
pF
ISS
V
= 0 V, f = 1 MHz,
GS
Output Capacitance
C
OSS
C
RSS
V
DS
= 20 V
Reverse Transfer Capacitance
Total Gate Charge
Q
nC
ns
V
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
= 4.5 V, V = 10 V;
DS
GS
I
D
= 200 mA
Q
GS
GD
Q
SWITCHING CHARACTERISTICS, V = V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
12.2
9.0
d(ON)
t
r
V
I
= 10 V, V = 25 V,
DD
GS
= 500 mA, R = 25 W
Turn−Off Delay Time
Fall Time
t
55.8
29
D
G
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
J
0.8
0.7
1.2
V
= 0 V,
= 200 mA
GS
I
T = 85°C
J
S
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
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2
2N7002K
TYPICAL CHARACTERISTICS
1.6
1.2
0.8
1.2
5.0 V
4.5 V
V
= 10 V
GS
9.0 V
4.0 V
8.0 V
7.0 V
6.0 V
0.8
3.5 V
T = 25°C
J
3.0 V
2.5 V
0.4
0
0.4
0
T = 125°C
T = −55°C
J
J
0
2
4
6
0
2
4
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.2
2.8
2.4
2.0
1.6
1.2
0.8
3.2
2.8
2.4
2.0
1.6
1.2
0.8
V
GS
= 4.5 V
V
GS
= 10 V
T = 125°C
J
T = 125°C
J
T = 85°C
J
T = 85°C
J
T = 25°C
J
T = 25°C
J
T = −55°C
J
T = −55°C
J
0.4
0
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
I , DRAIN CURRENT (A)
D
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Drain Current and
Figure 4. On−Resistance vs. Drain Current and
Temperature
Temperature
2.4
2.0
1.6
1.2
2.2
1.8
1.4
I
D
= 0.2 A
I
= 500 mA
D
V
GS
= 4.5 V
V
= 10 V
GS
I
D
= 200 mA
1.0
0.6
0.8
0.4
2
4
6
8
10
−50 −25
0
25
50
75
100
125 150
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance vs. Gate−to−Source
Figure 6. On−Resistance Variation with
Voltage
Temperature
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3
2N7002K
TYPICAL CHARACTERISTICS
30
5
C
iss
T = 25°C
J
I
D
= 0.2 A
4
3
2
20
10
0
T = 25°C
J
V
GS
= 0 V
C
oss
1
0
C
rss
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
V
GS
= 0 V
1
T = 85°C
J
T = 25°C
J
0.1
0.01
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
2N7002K
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: INCH.
SEE VIEW C
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD
318−08.
H
E
E
MILLIMETERS
INCHES
NOM
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
c
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
1
2
b
0.25
e
q
A
H
E
L
A1
L1
VIEW C
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
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2N7002K/D
相关型号：
2N7002K-13
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
DIODES
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