2N7002K [SILIKRON]
Direct Logic-Level Interface: TTL/CMOS; 直接逻辑电平接口： TTL / CMOS
| 型号： | 2N7002K |
| 厂家： | 
SILIKRON SEMICONDUCTOR CO.,LTD. |
| 描述： | Direct Logic-Level Interface: TTL/CMOS |
| 文件： | 总5页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002K
GENERAL FEATURES
● VDS = 60V,ID = 0.3A
RDS(ON) < 3Ω @ VGS=5V
RDS(ON) < 2Ω @ VGS=10V
ESD Rating：1000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
APPLICATION
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
●Battery Operated Systems
Marking and pin Assignment
●Solid-State Relays
SOT23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
S72K
2N7002K
SOT23
Ø180mm
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
±20
0.3
VGS
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
0.8
A
IDM
Maximum Power Dissipation
0.35
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0
2N7002K
VDS=50V,VGS=0V
VDS=60V,VGS=0V
VGS=±5V,VDS=0V
VGS=±10V,VDS=0V
VGS=±20V,VDS=0V
VDS=0V, IG=±250uA
10
nA
μA
nA
nA
uA
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
1
100
150
10
IGSS
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVGSO
±20
1
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VDS=10V,ID=0.2A
2.5
2
V
Ω
S
Drain-Source On-State Resistance
3
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
0.08
Clss
Coss
Crss
30
6
PF
PF
PF
VDS=25V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
3
VDD=30V,VGS=10V,
RGEN=10Ω，RL=150Ω
ID=0.2A
td(on)
td(off)
Qg
25
35
nS
nS
nC
Turn-Off Delay Time
Total Gate Charge
VDS=10V,ID=0.25A,VGS=4.5V
0.4
0.6
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=0.2A
1.3
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.0
2N7002K
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
toff
tf
Vdd
td(on)
td(off)
Rl
90%
Vin
90%
10%
D
Vout
VOUT
INVERTED
Vgs
Rgen
10%
50%
G
90%
50%
VIN
S
10%
PULSE WIDTH
Figure 1: Switching Test Circuit
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
3
http://www.silikron.com
v1.0
2N7002K
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Dimensions in Millimeters
Symbol
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
4
http://www.silikron.com
v1.0
2N7002K
ATTENTION:
■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
■
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
mounted in the customer’s products or equipment.
■ Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to
other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such
measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
■ In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under
any of applicable local export control laws and regulations, such products must not be exported without obtaining the export
license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of
Silikron Semiconductor CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use
or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product
that you intend to use.
■
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
5
http://www.silikron.com
v1.0
相关型号：
2N7002K-13
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明