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2N7002G-AE3-R [UTC]

Transistor;
2N7002G-AE3-R
型号： 2N7002G-AE3-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Transistor
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UNISONIC TECHNOLOGIES CO., LTD  
2N7002  
Power MOSFET  
N-CHANNEL  
ENHANCEMENT MODE  
„
DESCRIPTION  
The UTC 2N7002 has been designed to minimize on-state  
resistance while provide rugged, reliable, and fast switching  
performance. It can be used in most applications requiring up to  
400mA DC and can deliver pulsed currents up to 2A. The product  
is particularly suited for low voltage, low current applications such  
as small servo motor control, power MOSFET gate drivers, and  
other switching applications  
„
FEATURES  
* High density cell design for low RDS(ON)  
* Voltage controlled small signal switch  
* Rugged and reliable  
.
Lead-free:  
Halogen-free: 2N7002G  
2N7002L  
* High saturation current capability  
„
SYMBOL  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
Halogen-Free  
2N7002G-AE3-R  
2N7002G-AL3-R  
2N7002G-AL6-R  
1
S
S
2
G
G
3
D
D
4
-
5
-
6
-
2N7002-AE3-R  
2N7002-AL3-R  
2N7002-AL6-R  
2N7002L-AE3-R  
2N7002L-AL3-R  
2N7002L-AL6-R  
SOT-23  
SOT-323  
SOT-363  
Tape Reel  
Tape Reel  
Tape Reel  
-
-
-
S1 G1 D2 S2 G2 D1  
„
MARKING  
3P  
L: Lead Free  
L: Halogen Free  
FOR SOT-23/SOT-323  
FOR SOT-363  
www.unisonic.com.tw  
1 of 6  
Copyright © 2008 Unisonic Technologies Co., Ltd  
QW-R206-037,G  
2N7002  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS  
„
(Ta=25°C unless otherwise noted.)  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
UNIT  
V
Drain-Source Voltage  
60  
60  
Drain-Gate Voltage (RGS ≤1MΩ)  
VDGR  
V
Continuous  
±20  
±40  
300  
Gate Source Voltage  
VGSS  
V
Non Repetitive(tp<50μs)  
Continuous  
Drain Current  
ID  
mA  
Pulsed  
800  
Power Dissipation  
200  
1.6  
mW  
mW/°C  
°C  
PD  
Derated Above 25°C  
Junction Temperature  
Storage Temperature  
TJ  
+ 150  
-55 ~ +150  
TSTG  
°C  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
RATINGS  
625  
UNIT  
Junction to Ambient  
θJA  
°C/W  
ELECTRICAL CHARACTERISTICS  
„
(TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
VGS=0V, ID=10μA  
60  
1
V
VDS=60V, VGS =0V  
VGS =20V, VDS=0V  
VGS =-20V, VDS=0V  
1
μA  
nA  
nA  
IGSSF  
IGSSR  
100  
-100  
Gate-Source Leakage Current  
ON CHARACTERISTICS (Note)  
Gate Threshold Voltage  
VGS(TH) VGS = VDS, ID=250μA  
2.1  
0.6  
2.5  
3.75  
1.5  
V
V
VGS = 10V, ID=500mA  
Drain-Source On-Voltage  
VDS (ON)  
VGS = 5.0V, ID=50mA  
0.09  
On-State Drain Current  
ID(ON)  
VGS=10V,VDS≥2VDS(ON)  
500 2700  
mA  
Ω
VGS =10V, ID=500mA  
1.2  
1.7  
3.5  
7.5  
Static Drain-Source On-Resistance  
RDS (ON)  
VGS =5.0V, ID=50mA  
Ω
DYNAMIC CHARACTERISTICS  
Input Capacitance  
CISS  
COSS  
CRSS  
VDS=25V,VGS=0V,f=1.0MHz  
20  
11  
4
50  
25  
5
pF  
pF  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
VDD=30V, RL=150Ω  
Turn-On Time  
tON  
ID=200mA, VGS =10V  
20  
20  
nS  
nS  
RGEN =25Ω  
VDD=30V, RL=25Ω  
ID=200mA, VGS=10V  
Turn-Off Time  
tOFF  
RGEN =25Ω  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Drain-Source Diode Forward Voltage  
Maximum Pulsed Drain-Source Diode  
Forward Current  
VSD  
ISM  
VGS=0V, Is=115mA (Note )  
0.88  
1.5  
0.8  
V
A
Maximum Continuous Drain-Source  
Diode Forward Current  
Is  
115  
mA  
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
www.unisonic.com.tw  
QW-R206-037,G  
2N7002  
Power MOSFET  
„
TEST CIRCUIT AND WAVEFORM  
VDD  
RL  
V
IN  
VOUT  
D
VGS  
RGEN  
DUT  
G
S
Figure 1  
ton  
toff  
(
off  
d
)
t
tr  
90%  
t
f
td (on)  
90%  
Output, Vout  
10%  
10%  
Inverted  
90%  
V
in  
Input,  
50%  
50%  
10%  
Pulse Width  
Figure 2. Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
www.unisonic.com.tw  
QW-R206-037,G  
2N7002  
Power MOSFET  
TYPICAL CHARACTERISTICS  
„
On-Resistance Varisation with Gate  
On-Resistance Characteristics  
Voltage and Drain Current  
3
2
9.0V  
VGS=10V  
8.0V  
VGS  
=4.0V  
4.5V  
5.0V  
7.0V  
2.5  
1.5  
6.0V  
6.0V  
2
7.0V  
8.0V  
9.0V  
1
5.0V  
1.5  
1
10V  
0.5  
0
4.0V  
3.0V  
0.5  
1.2  
Drain Current, ID (A)  
2
1.6  
0
0.4  
0.8  
2
3
4
5
0
1
Drain-Source Voltage, VDS(V)  
On-Resistance Varisation with Drain  
Current and Temperature  
On-Resistance Varisation with Temperature  
3
2
VGS=10V  
VGS=10V  
ID=500mA  
2.5  
1.75  
1.5  
125℃  
25℃  
TJ =  
2
1.25  
1
1.5  
1
0.5  
0
0.75  
0.5  
-
-
25  
0
25  
150  
0
0.4  
1.2  
1.6  
2
50  
50  
75 100 125  
0.8  
Drain Current,ID (A)  
Junction Temperature, TJ (°C)  
Gate Threshold Varisation with Temperature  
Transfer Characteristics  
1.1  
2
VGS = VDS  
ID = 1mA  
VDS=10V  
25℃  
125℃  
1.05  
1
1.6  
8
1.  
0.95  
0.9  
1.2  
0.85  
0.8  
0. 4  
0
6
10  
25  
50  
0
2
4
8
-25  
0
75 100 125 150  
-50  
Gate to Source Voltage, VGS (V)  
Junction Temperature, TJ (°C)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R206-037,G  
www.unisonic.com.tw  
2N7002  
Power MOSFET  
TYPICAL CHARACTERICS (Cont.)  
„
Body Diode Forward Voltage Varisation  
with Temperature  
Breakdown Voltage Varisation  
with Temperature  
2
1
1.1  
VGS=0V  
ID = 250μA  
1.075  
1.05  
0.5  
TJ =125℃  
25℃  
0.1  
1.025  
1
0.05  
0.01  
0.975  
0.005  
0.95  
0.001  
0.925  
1
1.2  
1.4  
0.8  
-50  
150  
125  
75 100  
0.2  
0.4  
0.6  
-25  
0
25  
50  
Body Diode Forward Voltage, VSD (V)  
Junction Temperature, TJ (°C)  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
www.unisonic.com.tw  
QW-R206-037,G  
2N7002  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R206-037,G  
www.unisonic.com.tw  

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