2SC3829 [PANASONIC]
Silicon NPN epitaxial planer type(For UHF band low-noise amplification); NPN硅外延平面型(适用于UHF频段低噪声放大)型号: | 2SC3829 |
厂家: | PANASONIC |
描述: | Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
文件: | 总2页 (文件大小:41K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Transistor
2SC3829
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
2.8 –+00..32
0.65±0.15
1.5 –+00..0255
0.65±0.15
Features
Low noise figure NF.
■
●
●
High gain.
High transition frequency fT.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
●
3
●
0.1 to 0.3
Absolute Maximum Ratings (Ta=25˚C)
■
0.4±0.2
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
10
V
1:Base
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2
80
V
2:Emitter
3:Collector
mA
mW
˚C
Collector power dissipation
Junction temperature
Storage temperature
PC
200
Marking symbol : 3M
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
V
CB = 10V, IE = 0
1
1
IEBO
VCBO
VCEO
hFE
VEB = 2V, IC = 0
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
IC = 10µA, IE = 0
15
10
50
5
IC = 100µA, IB = 0
V
VCE = 8V, IC = 20mA
150
6
300
1.2
fT
VCE = 8V, IC = 20mA, f = 800MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
GHz
pF
Collector output capacitance
Foward transfer gain
Cob
0.7
13.5
15
2
| S21e
|
10
dB
Maximum unilateral power gain
Noise figure
GUM
NF
dB
2
dB
1
Transistor
2SC3829
PC — Ta
IC — VCE
IC — VBE
240
200
160
120
80
24
20
16
12
8
120
100
80
60
40
20
0
Ta=25˚C
VCE=8V
IB=200µA
180µA
25˚C
160µA
Ta=75˚C
–25˚C
140µA
120µA
100µA
80µA
60µA
40µA
40
4
20µA
0
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
100
600
12
10
8
IC/IB=10
VCE=8V
f=800MHz
Ta=25˚C
VCE=8V
30
10
500
400
300
200
100
0
Ta=75˚C
3
1
6
Ta=75˚C
25˚C
–25˚C
25˚C
0.3
0.1
4
–25˚C
2
0.03
0.01
0
0.1
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Collector current IC mA
Cob — VCB
GUM — IC
NF — IC
2.4
24
20
16
12
8
12
10
8
IE=0
f=1MHz
Ta=25˚C
VCE=8V
f=800MHz
Ta=25˚C
VCE=8V
(Rg=50Ω)
f=800MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
6
4
4
2
0
0.1
0
0.1
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
0.3
10
3
100 300 1000
( )
V
(
)
(
)
Collector to base voltage VCB
Collector current IC mA
Collector current IC mA
2
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