2SC3829TSK [PANASONIC]

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2SC3829TSK
型号: 2SC3829TSK
厂家: PANASONIC    PANASONIC
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Transistor  
2SC3829  
Silicon NPN epitaxial planer type  
For UHF band low-noise amplification  
Unit: mm  
2.8 +00..32  
0.65±0.15  
1.5 +00..0255  
0.65±0.15  
Features  
Low noise figure NF.  
High gain.  
High transition frequency fT.  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
2
3
0.1 to 0.3  
Absolute Maximum Ratings (Ta=25˚C)  
0.4±0.2  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
15  
10  
V
1:Base  
JEDEC:TO–236  
EIAJ:SC–59  
Mini Type Package  
2
80  
V
2:Emitter  
3:Collector  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Marking symbol : 3M  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
V
CB = 10V, IE = 0  
1
1
IEBO  
VCBO  
VCEO  
hFE  
VEB = 2V, IC = 0  
Collector to base voltage  
Collector to emitter voltage  
Forward current transfer ratio  
Transition frequency  
IC = 10µA, IE = 0  
15  
10  
50  
5
IC = 100µA, IB = 0  
V
VCE = 8V, IC = 20mA  
150  
6
300  
1.2  
fT  
VCE = 8V, IC = 20mA, f = 800MHz  
VCB = 10V, IE = 0, f = 1MHz  
VCE = 8V, IC = 20mA, f = 800MHz  
VCE = 8V, IC = 20mA, f = 800MHz  
VCE = 8V, IC = 20mA, f = 800MHz  
GHz  
pF  
Collector output capacitance  
Foward transfer gain  
Cob  
0.7  
13.5  
15  
2
| S21e  
|
10  
dB  
Maximum unilateral power gain  
Noise figure  
GUM  
NF  
dB  
2
dB  
1
Transistor  
2SC3829  
PC — Ta  
IC — VCE  
IC — VBE  
240  
200  
160  
120  
80  
24  
20  
16  
12  
8
120  
100  
80  
60  
40  
20  
0
Ta=25˚C  
VCE=8V  
IB=200µA  
180µA  
25˚C  
160µA  
Ta=75˚C  
–25˚C  
140µA  
120µA  
100µA  
80µA  
60µA  
40µA  
40  
4
20µA  
0
0
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
12  
0
0.4  
0.8  
1.2  
1.6  
2.0  
(
)
( )  
V
( )  
Base to emitter voltage VBE V  
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
VCE(sat) — IC  
hFE — IC  
fT — IC  
100  
600  
12  
10  
8
IC/IB=10  
VCE=8V  
f=800MHz  
Ta=25˚C  
VCE=8V  
30  
10  
500  
400  
300  
200  
100  
0
Ta=75˚C  
3
1
6
Ta=75˚C  
25˚C  
–25˚C  
25˚C  
0.3  
0.1  
4
–25˚C  
2
0.03  
0.01  
0
0.1  
0.1  
0.3  
1
3
10  
30  
100  
0.1  
0.3  
1
3
10  
30  
100  
0.3  
1
3
10  
30  
100  
(
)
(
)
(
)
Collector current IC mA  
Collector current IC mA  
Collector current IC mA  
Cob — VCB  
GUM — IC  
NF — IC  
2.4  
24  
20  
16  
12  
8
12  
10  
8
IE=0  
f=1MHz  
Ta=25˚C  
VCE=8V  
f=800MHz  
Ta=25˚C  
VCE=8V  
(Rg=50)  
f=800MHz  
Ta=25˚C  
2.0  
1.6  
1.2  
0.8  
0.4  
0
6
4
4
2
0
0.1  
0
0.1  
0.1  
0.3  
1
3
10  
30  
100  
0.3  
1
3
10  
30  
100  
0.3  
10  
3
100 300 1000  
( )  
V
(
)
(
)
Collector to base voltage VCB  
Collector current IC mA  
Collector current IC mA  
2

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