2SC3831 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SC3831 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:186K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3831
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
600
500
10
UNIT
V
Open base
V
Open collector
V
10
A
ICP
Collector current-pulse
Base current
20
A
IB
4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
100
150
-55~150
W
ꢀ
Tj
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3831
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=25mA; IB=0
500
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A IB=1.0A
0.5
1.3
1
V
IC=5A ;IB=1.0A
VCB=600V; IE=0
VEB=10V; IC=0
IC=5A ; VCE=4V
IC=1A ; VCE=12V
f=1MHz ; VCB=10V
V
mA
mA
IEBO
0.1
30
hFE
10
fT
Transition frequency
8
MHz
pF
COB
Output capacitance
105
Switching times
ton
tstg
tf
Turn-on time
1.0
4.5
0.5
µs
µs
µs
IC=5A; VCC=200V
IB1=0.5A; IB2=-1A
RL=40Ω
Storage time
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3831
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3831
4
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