2SC3832 [SANKEN]
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose); 硅NPN三重扩散平面型晶体管(开关稳压器和通用)![2SC3832](http://pdffile.icpdf.com/pdf1/p00079/img/icpdf/2SC3832_414085_icpdf.jpg)
型号: | 2SC3832 |
厂家: | ![]() |
描述: | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) |
文件: | 总1页 (文件大小:27K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
2 S C3 8 3 2
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)
Application : Switching Regulator and General Purpose
External Dimensions MT-25(TO220)
■Absolute maximum ratings
■Electrical Characteristics
(Ta=25°C)
(Ta=25°C)
Symbol
ICBO
2SC3832
2SC3832
Conditions
VCB=500V
Unit
µA
µA
V
Symbol
Unit
±0.2
4.8
±0.2
10.2
±0.1
2.0
100max
100max
400min
10 to 30
0.5max
1.3max
10typ
VCBO
VCEO
VEBO
IC
500
400
V
IEBO
VEB=10V
V
V(BR)CEO
hFE
IC=25mA
10
V
±0.2
ø3.75
a
VCE=4V, IC=3A
IC=3A, IB=0.6A
IC=3A, IB=0.6A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
7(Pulse14)
2
A
b
VCE(sat)
VBE(sat)
fT
V
V
IB
A
PC
50(Tc=25°C)
150
W
°C
°C
1.35
MHz
pF
Tj
+0.2
COB
50typ
Tstg
0.65
-0.1
–55 to +150
2.5
2.5
1.4
■Typical Switching Characteristics (Common Emitter)
B
C E
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
tstg
(µs)
tf
(µs)
VCC
(V)
RL
(Ω)
ton
(µs)
Weight : Approx 2.6g
a. Type No.
3
10
–5
0.3
–0.6
3max
0.5max
b. Lot No.
200
66.7
1max
–
–
–
IC VCE Characteristics (Typical)
VCE(sat),VBE(sat) IC Temperature Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(IC/IB=5)
(VCE=4V)
7
7
6
6
4
2
VBE(sat)
1
4
2
0
VCE(sat)
0
0.02 0.05 0.1
0
0
1
2
3
4
0.5
1
5 7
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector-Emitter Voltage VCE(V)
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
–
–
–
hFE IC Characteristics (Typical)
ton•tstg•tf IC Characteristics (Typical)
θ
j-a t Characteristics
(VCE=4V)
4
1
10
5
50
tstg
VCC 200V
IC:IB1:–IB2=10:1:2
1
0.5
ton
10
5
0.5
0.3
tf
0.1
0.2
1
10
100
1000
0.5
1
5
0.02
0.05 0.1
0.5
1
5
7
Collector Current IC(A)
Time t(ms)
Collector Current IC(A)
Safe Operating Area (Single Pulse)
Reverse Bias Safe Operating Area
–
Pc Ta Derating
20
10
5
50
20
10
5
40
30
20
10
1
1
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
0.5
0.5
Without Heatsink
Natural Cooling
Without Heatsink
2
0
0.1
0.1
5
5
10
50
100
500
10
50
100
500
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
72
相关型号:
![](http://pdffile.icpdf.com/pdf1/p00079/img/page/2SC3833_414086_files/2SC3833_414086_1.jpg)
2SC3833
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
SANKEN
![](http://pdffile.icpdf.com/pdf1/p00079/img/page/2SC3834_414087_files/2SC3834_414087_1.jpg)
2SC3834
Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)
SANKEN
![](http://pdffile.icpdf.com/pdf2/p00286/img/page/2SC3831_1715420_files/2SC3831_1715420_1.jpg)
2SC3834
Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, MT-25, 3 PIN
ALLEGRO
©2020 ICPDF网 联系我们和版权申明