2SC3833 [SANKEN]
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose); 硅NPN三重扩散平面型晶体管(开关稳压器和通用)型号: | 2SC3833 |
厂家: | SANKEN ELECTRIC |
描述: | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) |
文件: | 总1页 (文件大小:28K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2 S C3 8 3 3
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)
Application : Switching Regulator and General Purpose
External Dimensions MT-100(TO3P)
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Symbol
Conditions
2SC3833
Unit
µA
µA
V
2SC3833
Unit
±0.2
4.8
±0.4
15.6
±0.1
2.0
9.6
ICBO
VCB=500V
100max
100max
400min
10 to 30
0.5max
1.3max
10typ
500
V
IEBO
VEB=10V
400
10
V
V(BR)CEO
hFE
IC=25mA
V
a
b
±0.1
ø3.2
VCE=4V, IC=7A
IC=7A, IB=1.4A
IC=7A, IB=1.4A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
12(Pulse24)
4
A
IB
VCE(sat)
VBE(sat)
fT
V
V
A
PC
2
100(Tc=25°C)
150
W
°C
°C
3
Tj
MHz
pF
+0.2
-0.1
+0.2
-0.1
1.05
0.65
1.4
Tstg
COB
105typ
–55 to +150
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
Weight : Approx 6.0g
a. Type No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
b. Lot No.
200
28.5
7
10
–5
0.7
–1.4
1.0max
3.0max
0.5max
–
–
–
IC VCE Characteristics (Typical)
VCE(sat),VBE(sat) IC Temperature Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(IC/IB=5)
(VCE=4V)
12
12
10
8
10
8
VBE(sat)
1
6
6
4
4
IB=100mA
2
2
VCE(sat)
0
0.02 0.05 0.1
0
0
0
1
2
3
4
0.5
1
5
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector-Emitter Voltage VCE(V)
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
–
–
–
hFE IC Characteristics (Typical)
ton•tstg•tf IC Characteristics (Typical)
θ
j-a t Characteristics
(VCE=4V)
2
8
5
50
125˚C
–30˚C
tstg
1
VCC 200V
IC:IB1:–IB2=10:1:2
0.5
1
0.5
ton
10
5
tf
0.1
0.5
0.1
1
10
100
1000
1
5
10
0.02 0.05 0.1
0.5
1
5
10 12
Collector Current IC(A)
Time t(ms)
Collector Current IC(A)
Safe Operating Area (Single Pulse)
Reverse Bias Safe Operating Area
–
Pc Ta Derating
30
30
100
10
5
10
5
1
1
50
0.5
0.5
Without Heatsink
Natural Cooling
L=3mH
0.1
0.1
Without Heatsink
Natural Cooling
0.05
0.05
–IB2=1A
Duty:less than 1%
Without Heatsink
3.5
0
0.01
0.01
5
10
50
100
500
5
10
50
100
500
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
73
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