2SC3833 [SANKEN]

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose); 硅NPN三重扩散平面型晶体管(开关稳压器和通用)
2SC3833
型号: 2SC3833
厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述:

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
硅NPN三重扩散平面型晶体管(开关稳压器和通用)

晶体 稳压器 开关 晶体管 功率双极晶体管 局域网
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2 S C3 8 3 3  
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)  
Application : Switching Regulator and General Purpose  
External Dimensions MT-100(TO3P)  
Absolute maximum ratings (Ta=25°C)  
Electrical Characteristics  
(Ta=25°C)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Symbol  
Conditions  
2SC3833  
Unit  
µA  
µA  
V
2SC3833  
Unit  
±0.2  
4.8  
±0.4  
15.6  
±0.1  
2.0  
9.6  
ICBO  
VCB=500V  
100max  
100max  
400min  
10 to 30  
0.5max  
1.3max  
10typ  
500  
V
IEBO  
VEB=10V  
400  
10  
V
V(BR)CEO  
hFE  
IC=25mA  
V
a
b
±0.1  
ø3.2  
VCE=4V, IC=7A  
IC=7A, IB=1.4A  
IC=7A, IB=1.4A  
VCE=12V, IE=1A  
VCB=10V, f=1MHz  
12(Pulse24)  
4
A
IB  
VCE(sat)  
VBE(sat)  
fT  
V
V
A
PC  
2
100(Tc=25°C)  
150  
W
°C  
°C  
3
Tj  
MHz  
pF  
+0.2  
-0.1  
+0.2  
-0.1  
1.05  
0.65  
1.4  
Tstg  
COB  
105typ  
–55 to +150  
±0.1  
±0.1  
5.45  
5.45  
Typical Switching Characteristics (Common Emitter)  
B
C
E
Weight : Approx 6.0g  
a. Type No.  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(A)  
IB2  
(A)  
ton  
(µs)  
tstg  
(µs)  
tf  
(µs)  
b. Lot No.  
200  
28.5  
7
10  
–5  
0.7  
–1.4  
1.0max  
3.0max  
0.5max  
IC VCE Characteristics (Typical)  
VCE(sat),VBE(sat) IC Temperature Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(IC/IB=5)  
(VCE=4V)  
12  
12  
10  
8
10  
8
VBE(sat)  
1
6
6
4
4
IB=100mA  
2
2
VCE(sat)  
0
0.02 0.05 0.1  
0
0
0
1
2
3
4
0.5  
1
5
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Collector-Emitter Voltage VCE(V)  
Base-Emittor Voltage VBE(V)  
Collector Current IC(A)  
hFE IC Characteristics (Typical)  
tontstgtf IC Characteristics (Typical)  
θ
j-a t Characteristics  
(VCE=4V)  
2
8
5
50  
125˚C  
–30˚C  
tstg  
1
VCC 200V  
IC:IB1:–IB2=10:1:2  
0.5  
1
0.5  
ton  
10  
5
tf  
0.1  
0.5  
0.1  
1
10  
100  
1000  
1
5
10  
0.02 0.05 0.1  
0.5  
1
5
10 12  
Collector Current IC(A)  
Time t(ms)  
Collector Current IC(A)  
Safe Operating Area (Single Pulse)  
Reverse Bias Safe Operating Area  
Pc Ta Derating  
30  
30  
100  
10  
5
10  
5
1
1
50  
0.5  
0.5  
Without Heatsink  
Natural Cooling  
L=3mH  
0.1  
0.1  
Without Heatsink  
Natural Cooling  
0.05  
0.05  
–IB2=1A  
Duty:less than 1%  
Without Heatsink  
3.5  
0
0.01  
0.01  
5
10  
50  
100  
500  
5
10  
50  
100  
500  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
73  

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