2SC3832 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3832 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3832
DESCRIPTION
·
·With TO-220C package
·High voltage
·High speed switching
APPLICATIONS
·For switching regulator and
general purpose applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
500
400
10
UNIT
V
Open base
V
Open collector
V
7
A
ICM
Collector current-peak
Base current
14
A
IB
2
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3832
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=25mA ; IB=0
MIN
TYP.
MAX
UNIT
V
400
IC=3A; IB=0.6A
IC=3A; IB=0.6A
VCB=500V ;IE=0
VEB=10V; IC=0
0.5
1.3
100
100
30
V
V
μA
μA
IEBO
hFE
DC current gain
IC=3A ; VCE=4V
IC=0.5A ; VCE=12V
f=1MHz ; VCB=10V
10
fT
Transition frequency
10
50
MHz
pF
COB
Output capacitance
Switching times
ton
tstg
tf
Turn-on time
1.0
3.0
0.5
μs
μs
μs
VCC=200V; IC=3A
IB1=0.3A;IB2=-0.6A;
RL=66.7Ω
Storage time
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3832
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3832
4
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