2SC3830 [SANKEN]
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose); 硅NPN三重扩散平面型晶体管（开关稳压器和通用）
| 型号： | 2SC3830 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2 S C3 8 3 0
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)
Application : Switching Regulator and General Purpose
■Absolute maximum ratings
■Electrical Characteristics
(Ta=25°C)
(Ta=25°C)
External Dimensions MT-25(TO220)
2SC3830
Symbol
2SC3830
Symbol
ICBO
Conditions
VCB=600V
Unit
mA
µA
V
Unit
±0.2
4.8
±0.2
10.2
1max
±0.1
2.0
VCBO
VCEO
VEBO
IC
600
500
V
100max
500min
10 to 30
0.5max
1.3max
8typ
IEBO
VEB=10V
V
V(BR)CEO
hFE
IC=25mA
10
V
±0.2
ø3.75
a
VCE=4V, IC=2A
IC=2A, IB=0.4A
IC=2A, IB=0.4A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
6(Pulse12)
2
A
b
IB
VCE(sat)
VBE(sat)
fT
V
V
A
PC
50(Tc=25°C)
150
W
°C
°C
1.35
Tj
MHz
pF
+0.2
45typ
Tstg
COB
–55 to +150
0.65
-0.1
2.5
2.5
1.4
■Typical Switching Characteristics (Common Emitter)
B
C E
Weight : Approx 2.6g
a. Type No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
tstg
(µs)
ton
(µs)
tf
(µs)
b. Lot No.
200
100
2
10
–5
0.2
–0.4
4.5max
1max
0.5max
–
–
–
IC VCE Characteristics (Typical)
VCE(sat),VBE(sat) IC Temperature Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(IC/IB=5)
(VCE=4V)
6
6
2
5
4
3
2
1
5
4
300mA
200mA
VBE(sat)
1
3
2
IB=100mA
1
0
VCE(sat)
0
0.02
0
0.05 0.1
0.5
1
5
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Base-Emittor Voltage VBE(V)
–
–
–
hFE IC Characteristics (Typical)
ton•tstg•tf IC Characteristics (Typical)
θ
j-a t Characteristics
(VCE=4V)
4
1
7
5
50
125˚C
25˚C
tstg
VCC 200V
IC:IB1:IB2=10:1:–2
1
0.5
ton
10
5
0.5
0.3
tf
0.1
0.2
1
10
100
1000
0.5
1
5
6
0.02
0.05 0.1
0.5
1
5 6
Collector Current IC(A)
Time t(ms)
Collector Current IC(A)
Safe Operating Area (Single Pulse)
Reverse Bias Safe Operating Area
–
Pc Ta Derating
20
10
5
50
20
10
5
40
30
20
10
1
1
0.5
0.5
Without Heatsink
Natural Cooling
L=3mH
Without Heatsink
Natural Cooling
0.1
0.1
IB2=–0.5A
Duty:less than 1%
0.05
0.05
Without Heatsink
2
0
0.02
7
0.02
50
10
50
100
500 600
100
500 600
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
70
相关型号：
2SC3831
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
SANKEN
2SC3831
Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
ALLEGRO
2SC3832
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
SANKEN
2SC3833
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
SANKEN
2SC3834
Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)
SANKEN
©2020 ICPDF网 联系我们和版权申明